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    Epitaxial substrate for field effect transistor
    1.
    发明申请
    Epitaxial substrate for field effect transistor 有权
    场效晶体管的外延衬底

    公开(公告)号：US20070069253A1

    公开(公告)日：2007-03-29

    申请号：US11386844

    申请日：2006-03-23

    申请人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

    发明人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

    IPC分类号： H01L29/80

    CPC分类号： H01L29/7787 ,  H01L29/66462 ,  Y10S438/931

    摘要： An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.

    摘要翻译： 一种用于场效应晶体管的外延晶体，其具有通过使用外延生长法在具有微管的SiC单晶基底板上生长的基于氮化物的III-V族半导体外延晶体，其中至少部分微管从 SiC单晶基底衬底中的外延晶体终止于晶体管的有源层与SiC单晶基底之间。

    Epitaxial substrate for field effect transistor
    2.
    发明授权
    Epitaxial substrate for field effect transistor 有权
    场效晶体管的外延衬底

    公开(公告)号：US07750351B2

    公开(公告)日：2010-07-06

    申请号：US11386844

    申请日：2006-03-23

    申请人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

    发明人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

    IPC分类号： H01L23/29 ,  H01L21/04

    CPC分类号： H01L29/7787 ,  H01L29/66462 ,  Y10S438/931

    摘要： An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.

    摘要翻译： 一种用于场效应晶体管的外延晶体，其具有通过使用外延生长法在具有微管的SiC单晶基底板上生长的基于氮化物的III-V族半导体外延晶体，其中至少部分微管从 SiC单晶基底衬底中的外延晶体终止于晶体管的有源层与SiC单晶基底之间。

    SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
    3.
    发明申请
    SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME 审中-公开
    半导体场效应晶体管及其制造方法

    公开(公告)号：US20110012110A1

    公开(公告)日：2011-01-20

    申请号：US12293330

    申请日：2007-03-16

    申请人： Hiroyuki Sazawa ,  Mitsuaki Shimizu ,  Shuichi Yagi ,  Hajime Okumura

    发明人： Hiroyuki Sazawa ,  Mitsuaki Shimizu ,  Shuichi Yagi ,  Hajime Okumura

    IPC分类号： H01L29/04 ,  H01L21/336

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/517

    摘要： A gallium nitride based field effect transistor having good current hysteresis characteristics in which forward gate leakage can be reduced. In a gallium nitride-based field effect transistor (100) having a gate insulation film (108), part or all of a material constituting the gate insulation film (108) is a dielectric material having a relative dielectric constant of 9-22, and a semiconductor crystal layer A (104) in contact with the gate insulation film (108) and a semiconductor crystal layer B (103) in the vicinity of the semiconductor crystal layer A (104) and having a larger electron affinity than the semiconductor crystal layer A (104) constitute a hetero junction. A hafnium oxide such as HfO2, HfAlO, HfAlON or HfSiO is preferably contained, at least partially, in the material constituting the gate insulation film (108).

    摘要翻译： 一种具有良好的电流滞后特性的氮化镓基场效应晶体管，其中可以减少正向栅极泄漏。 在具有栅极绝缘膜（108）的氮化镓系场效应晶体管（100）中，构成栅极绝缘膜（108）的材料的一部分或全部是相对介电常数为9〜22的电介质材料， 与栅极绝缘膜（108）接触的半导体晶体层A（104）和半导体晶体层A（104）附近的半导体晶体层B（103），并且具有比半导体晶体层更大的电子亲和力 A（104）构成异质结。 至少部分地，在构成栅极绝缘膜（108）的材料中含有氧化铪如HfO 2，HfAlO，HfAlON或HfSiO。

    Epitaxial substrate for field effect transistor
    5.
    发明授权
    Epitaxial substrate for field effect transistor 有权

    公开(公告)号：US10340375B2

    公开(公告)日：2019-07-02

    申请号：US12527142

    申请日：2008-02-12

    申请人： Masahiko Hata ,  Hiroyuki Sazawa ,  Naohiro Nishikawa

    发明人： Masahiko Hata ,  Hiroyuki Sazawa ,  Naohiro Nishikawa

    IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L29/778 ,  H01L29/207 ,  H01L29/66 ,  H01L21/02 ,  H01L29/20

    摘要： The present invention provides an epitaxial substrate for field effect transistor. In the epitaxial substrate for field effect transistor, a nitride-based Group III-V semiconductor epitaxial crystal containing Ga is interposed between the ground layer and the operating layer, and the nitride-based Group III-V semiconductor epitaxial crystal includes the following (i), (ii) and (iii). (i) a first buffer layer containing Ga or Al and containing a high resistivity crystal layer having added thereto compensation impurity element present in the same period as Ga in the periodic table and having small atomic number; (ii) a second buffer layer containing Ga or Al, laminated on the operating layer side of the first buffer layer; and (iii) a high purity epitaxial crystal layer containing acceptor impurities in a slight amount such that non-addition or depletion state can be maintained, provided between the high resistivity layer and the operating layer.

    Gallium nitride epitaxial crystal, method for production thereof, and field effect transistor
    6.
    发明授权
    Gallium nitride epitaxial crystal, method for production thereof, and field effect transistor 有权
    氮化镓外延晶体，其制造方法和场效应晶体管

    公开(公告)号：US08350292B2

    公开(公告)日：2013-01-08

    申请号：US12527116

    申请日：2008-02-07

    申请人： Naohiro Nishikawa ,  Hiroyuki Sazawa ,  Masahiko Hata

    发明人： Naohiro Nishikawa ,  Hiroyuki Sazawa ,  Masahiko Hata

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/7783

    摘要： The present invention provides a gallium nitride type epitaxial crystal, a method for producing the crystal, and a field effect transistor using the crystal. The gallium nitride type epitaxial crystal comprises a base substrate and the following (a) to (e), wherein a connection layer comprising a gallium nitride type crystal is arranged in an opening of the non-gallium nitride type insulating layer to electrically connect the first buffer layer and the p-conductive type semiconductor crystal layer. (a) a gate layer, (b) a high purity first buffer layer containing a channel layer contacting an interface on the base substrate side of the gate layer, (c) a second buffer layer arranged on the base substrate side of the first buffer layer, (d) a non-gallium nitride type insulating layer arranged on the base substrate side of the second buffer layer, and having the opening at a part thereof, and (e) a p-conductive type semiconductor crystal layer arranged on the base substrate side of the insulating layer.

    摘要翻译： 本发明提供一种氮化镓型外延晶体，该晶体的制造方法以及使用该晶体的场效应晶体管。 氮化镓型外延晶体包括基底和以下（a）至（e），其中包括氮化镓型晶体的连接层被布置在非氮化镓型绝缘层的开口中，以将第一 缓冲层和p导电型半导体晶体层。 （a）栅极层，（b）高纯度第一缓冲层，其含有与栅极层的基底侧上的界面接触的沟道层，（c）第二缓冲层，其设置在第一缓冲层的基底侧 层，（d）配置在第二缓冲层的基板侧的非氮化镓系绝缘层，其一部分具有开口部，（e）配置在基板上的p导电型半导体晶体层 绝缘层的衬底侧。

    Method for manufacturing semiconductor epitaxial crystal substrate
    7.
    发明授权
    Method for manufacturing semiconductor epitaxial crystal substrate 有权
    半导体外延晶体基板的制造方法

    公开(公告)号：US07951685B2

    公开(公告)日：2011-05-31

    申请号：US12310984

    申请日：2007-09-14

    申请人： Hiroyuki Sazawa ,  Naohiro Nishikawa ,  Masahiko Hata

    发明人： Hiroyuki Sazawa ,  Naohiro Nishikawa ,  Masahiko Hata

    IPC分类号： H01L21/76

    CPC分类号： H01L29/66462 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

    摘要： The present invention provides a method for manufacturing a gallium nitride semiconductor epitaxial crystal substrate with a dielectric film which has a low gate leak current and negligibly low gate lag, drain lag, and current collapse characteristics. The method for manufacturing a semiconductor epitaxial crystal substrate is a method for manufacturing a semiconductor epitaxial crystal substrate in which a dielectric layer of a nitride dielectric material or an oxide dielectric material in an amorphous form functioning as a passivation film or a gate insulator is provided on a surface of a nitride semiconductor crystal layer grown by metal organic chemical vapor deposition. In the method, after the nitride semiconductor crystal layer is grown in an epitaxial growth chamber, the dielectric layer is grown on the nitride semiconductor crystal layer in the epitaxial growth chamber.

    摘要翻译： 本发明提供一种具有电介质膜的氮化镓半导体外延晶体基板的制造方法，所述电介质膜具有低栅极泄漏电流和可忽略的低栅极滞后，漏极滞后和电流塌陷特性。 半导体外延晶体基板的制造方法是制造半导体外延晶体基板的方法，其中，作为钝化膜或栅极绝缘体的非晶形式的氮化物电介质材料或氧化物电介质材料的介电层设置在 通过金属有机化学气相沉积生长的氮化物半导体晶体层的表面。 在该方法中，在外延生长室中生长氮化物半导体晶体层之后，在外延生长室中的氮化物半导体晶体层上生长电介质层。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20110108885A1

    公开(公告)日：2011-05-12

    申请号：US12933356

    申请日：2009-03-18

    申请人： Hiroyuki Sazawa ,  Naohiro Nishikawa ,  Yasuyuki Kurita ,  Masahiko Hata

    发明人： Hiroyuki Sazawa ,  Naohiro Nishikawa ,  Yasuyuki Kurita ,  Masahiko Hata

    IPC分类号： H01L29/78 ,  H01L21/20

    CPC分类号： H01L29/7787 ,  H01L29/1054 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66522 ,  H01L29/78

    摘要： The object of the present invention is to increase channel current density while a GaN-based field effect transistor operates in a normally-off mode. Provided is a semiconductor device comprising a group 3-5 compound semiconductor channel layer containing nitrogen, an electron supply layer that supplies electrons to the channel layer, a semiconductor layer that is formed on a side of the electron supply layer opposite the side facing the channel layer and that is an intrinsic or n-type group 3-5 compound semiconductor containing nitrogen, and a control electrode that is formed to contact the semiconductor layer or formed with an intermediate layer interposed between itself and the semiconductor layer.

    摘要翻译： 本发明的目的是增加沟道电流密度，而GaN系场效应晶体管以常关状态工作。 提供了一种半导体器件，其包括含有氮的组3-5化合物半导体沟道层，向沟道层提供电子的电子供给层，形成在电子供给层的与沟道侧相对的一侧上的半导体层 并且是含有氮的固有或n型组3-5化合物半导体，以及形成为与半导体层接触或形成有介于其自身与半导体层之间的中间层的控制电极。

    EPITAXIAL SUBSTRATE FOR FIELD EFFECT TRANSISTOR
    9.
    发明申请
    EPITAXIAL SUBSTRATE FOR FIELD EFFECT TRANSISTOR 审中-公开
    场效应晶体管的外延衬底

    公开(公告)号：US20100019277A1

    公开(公告)日：2010-01-28

    申请号：US12527142

    申请日：2008-02-12

    申请人： Masahiko Hata ,  Hiroyuki Sazawa ,  Naohiro Nishikawa

    发明人： Masahiko Hata ,  Hiroyuki Sazawa ,  Naohiro Nishikawa

    IPC分类号： H01L29/20

    CPC分类号： H01L29/7783 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/66462

    摘要： The present invention provides an epitaxial substrate for field effect transistor. In the epitaxial substrate for field effect transistor, a nitride-based Group III-V semiconductor epitaxial crystal containing Ga is interposed between the ground layer and the operating layer, and the nitride-based Group III-V semiconductor epitaxial crystal comprises the following (i), (ii) and (iii). (i) a first buffer layer containing Ga or Al and containing a high resistivity crystal layer having added thereto compensation impurity element present in the same period as Ga in the periodic table and having small atomic number; (ii) a second buffer layer containing Ga or Al, laminated on the operating layer side of the first buffer layer; and (iii) a high purity epitaxial crystal layer containing acceptor impurities in a slight amount such that non-addition or depletion state can be maintained, provided between the high resistivity layer and the operating layer.

    摘要翻译： 本发明提供一种用于场效晶体管的外延衬底。 在场效晶体管的外延衬底中，在接地层和工作层之间插入含有Ga的基于氮化物的III-V族III族半导体外延晶体，氮化物系III-V族半导体外延晶体包括以下（i ），（ii）和（iii）。 （i）包含Ga或Al的第一缓冲层，并且含有添加了与周期表中与Ga相同的周期中具有小原子序数的补偿杂质元素的高电阻率晶体层; （ii）层叠在第一缓冲层的工作层侧的含有Ga或Al的第二缓冲层; 和（iii）在高电阻率层和操作层之间提供含有少量的受主杂质的高纯度外延晶体层，使得能够维持非添加或耗尽状态。