公开(公告)号：US20080191123A1

公开(公告)日：2008-08-14

申请号：US11916075

申请日：2006-05-17

申请人： Gerhard Lutz ,  Lothar Strueder ,  Peter Holl

发明人： Gerhard Lutz ,  Lothar Strueder ,  Peter Holl

IPC分类号： H01L27/00 ,  H01L31/062

CPC分类号： H01L29/76816 ,  H01L27/14812 ,  H01L29/76833

摘要： The invention relates to a radiation detector (1) for detecting low-intensity radiation, especially for detecting individual photons. The radiation detector includes a plurality of rows of image cells (5) with respective pluralities of image cells (5) disposed one after the other and respective signal outputs (6). The radiation to be detected generates signal charge carriers in the individual image cells (5), the charge carriers being transported along the rows of image cells to the respective signal output (6). A plurality of output amplifiers (7) are connected in parallel to one of the signal outputs each of the individual image cell columns and amplify the signal charge carriers. The invention is characterized in that the output amplifiers (7) include respective avalanche amplifiers (8).

摘要翻译： 本发明涉及一种用于检测低强度辐射的辐射检测器（1），特别是用于检测单个光子。 辐射检测器包括多行图像单元（5），其具有彼此相继布置的相应多个图像单元（5）和相应的信号输出（6）。 待检测的辐射在各个图像单元（5）中产生信号电荷载流子，电荷载流子沿着图像单元的行被传送到相应的信号输出（6）。 多个输出放大器（7）并联连接到每个单独的图像单元列的信号输出之一并放大信号电荷载流子。 本发明的特征在于，输出放大器（7）包括相应的雪崩放大器（8）。

公开(公告)号：US07105827B2

公开(公告)日：2006-09-12

申请号：US10741198

申请日：2003-12-19

申请人： Peter Lechner ,  Gerhard Lutz ,  Lothar Strueder

发明人： Peter Lechner ,  Gerhard Lutz ,  Lothar Strueder

IPC分类号： G01T1/24

CPC分类号： H01L31/115 ,  H01J2237/2441 ,  H01L31/022408

摘要： Described is a semiconductor detector for detecting electromagnetic radiation or particle radiation, comprising a semiconductor body (10) of a first conduction type, comprising first and second main surfaces; a group of drift electrodes comprising a second, opposite, conduction type, with said drift electrodes being arranged on the first main surface for generating at least one drift field in the semiconductor body (10); and a counterelectrode arrangement (30) which is arranged on the second main surface, which comprises the second conduction type and which forms a radiation entry window, wherein the counterelectrode arrangement (30) comprises a two-dimensional main electrode (31) and at least one barrier electrode (32) which are electrically insulated from each other, and wherein the barrier electrode (32), of which there is at least one, is connected to a voltage source (50) and is designed such that a blocking voltage is applied to it relative to the semiconductor body (10), with said blocking voltage exceeding the blocking voltage of the main electrode (31).

摘要翻译： 描述了一种用于检测电磁辐射或粒子辐射的半导体检测器，包括第一和第二主表面的第一导电类型的半导体本体（10） 一组漂移电极，包括第二相对导电型，所述漂移电极布置在第一主表面上，用于在半导体本体（10）中产生至少一个漂移场; 和布置在第二主表面上的反电极布置（30），其包括第二导电类型并形成辐射入口窗，其中反电极布置（30）包括二维主电极（31），并且至少包括 一个彼此电绝缘的阻挡电极（32），并且其中至少有一个的阻挡电极（32）连接到电压源（50），并被设计成施加阻塞电压 相对于半导体本体（10），其中所述阻挡电压超过主电极（31）的阻断电压。

公开(公告)号：US08258594B2

公开(公告)日：2012-09-04

申请号：US12672102

申请日：2008-06-18

申请人： Rainer Richter ,  Ladislav Andricek ,  Gerhard Lutz

发明人： Rainer Richter ,  Ladislav Andricek ,  Gerhard Lutz

IPC分类号： H01L31/0232

CPC分类号： H01L31/107 ,  H01L27/1446

摘要： The invention relates to an avalanche photodiode (1) for detecting radiation, including a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also including a contact-making layer (12) at the underside (10) of the semiconductor substrate (11), a laterally delimited quenching resistance layer (18) arranged in the semiconductor substrate (11) between the lower diode layer (16) and the contact-making layer (12), wherein the quenching resistance layer (18) quenches the radiation-generated avalanche breakdown in the avalanche region, and also including a depletion electrode (15) arranged laterally alongside the laterally delimited lower diode layer (16), such that the depletion electrode (15) depletes the semiconductor substrate (11) laterally alongside the laterally delimited lower diode layer (16), while the quenching resistance layer (18) is screened from the depletion electrode (15) by the lower diode layer (16) and is therefore not depleted.

摘要翻译： 本发明涉及一种用于检测辐射的雪崩光电二极管（1），包括半导体衬底（11），上二极管层（15），相对掺杂的横向限定的下二极管层（16），位于上层 二极管层（15）和下二极管层（16），其中待检测的辐射触发雪崩区域中的雪崩击穿，并且还包括在半导体衬底的下侧（10）处的接触形成层（12） （11），布置在所述下二极管层（16）和所述接触形成层（12）之间的所述半导体衬底（11）中的横向限定的淬火电阻层（18），其中所述淬火电阻层（18）使所述辐射 在雪崩区域中产生雪崩击穿，并且还包括沿横向限定的下二极管层（16）横向布置的耗尽电极（15），使得耗尽电极（15）耗尽半导体衬底（1） 1）横向地沿着横向限定的下二极管层（16），同时通过下二极管层（16）从消耗电极（15）屏蔽淬火电阻层（18），因此不会耗尽。

公开(公告)号：US07586136B2

公开(公告)日：2009-09-08

申请号：US10597504

申请日：2005-01-17

申请人： Peter Lechner ,  Gerhard Lutz ,  Rainer Richter ,  Lothar Struder

发明人： Peter Lechner ,  Gerhard Lutz ,  Rainer Richter ,  Lothar Struder

IPC分类号： H01L27/00

CPC分类号： H01L31/101

摘要： The invention relates to a semiconductor structure, especially for use in a semiconductor detector. The semiconductor structure includes a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).

摘要翻译： 本发明涉及一种特别用于半导体检测器的半导体结构。 该半导体结构包括第一或第二掺杂类型的弱掺杂半导体衬底（HK），位于半导体衬底（HK）的第一表面上的第二掺杂类型的高掺杂漏区（D），高掺杂 位于半导体衬底（HK）的第一表面上的第二掺杂类型的源极区（S），在源极区（S）和漏极区（D）之间延伸的导管（K），掺杂的内部栅极区域 至少部分地位于管道（K）下方的第一掺杂类型的（IG）和用于从内部栅极区域（IG）去除电荷载流子的吹出接点（CL）。 根据本发明，内部栅极区域（IG）在半导体衬底（HK）中至少部分地延伸到吹出触点（CL），并且吹出触点（CL）相对于漏极端部位于漏极端 源区（S）。

公开(公告)号：US20080230811A1

公开(公告)日：2008-09-25

申请号：US10597504

申请日：2005-01-17

申请人： Peter Lechner ,  Gerhard Lutz ,  Rainer Richter ,  Lothar Struder

发明人： Peter Lechner ,  Gerhard Lutz ,  Rainer Richter ,  Lothar Struder

IPC分类号： H01L29/78

CPC分类号： H01L31/101

摘要： The invention relates to a semiconductor structure, especially for use in a semiconductor detector. The semiconductor structure includes a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).

摘要翻译： 本发明涉及一种特别用于半导体检测器的半导体结构。 该半导体结构包括第一或第二掺杂类型的弱掺杂半导体衬底（HK），位于半导体衬底（HK）的第一表面上的第二掺杂类型的高掺杂漏区（D），高掺杂 位于半导体衬底（HK）的第一表面上的第二掺杂类型的源极区（S），在源极区（S）和漏极区（D）之间延伸的导管（K），掺杂的内部栅极区域 至少部分地位于管道（K）下方的第一掺杂类型的（IG）和用于从内部栅极区域（IG）去除电荷载流子的吹出接点（CL）。 根据本发明，内部栅极区域（IG）在半导体衬底（HK）中至少部分地延伸到吹出触点（CL），并且吹出触点（CL）相对于漏极端部位于漏极端 源区（S）。

公开(公告)号：US4598474A

公开(公告)日：1986-07-08

申请号：US619393

申请日：1984-06-11

申请人： Gerhard Lutz

发明人： Gerhard Lutz

IPC分类号： H01R13/115 ,  H01R43/00 ,  H01R43/04

CPC分类号： H01R13/115 ,  H01R43/00 ,  Y10T29/49185 ,  Y10T29/49222

摘要： In an electrical plug connection comprising two matching elements which can be detached at any time, in order to avoid the difficulties of pushing one element on to the other during the assembly of a piece of equipment and the uncertain contact pressure which results by doing so, the matching elements are connected to form a plug unit, which can later be detached, as part of the manufacturing operation thereby insuring good alignment when they are pushed together and guaranteeing proper contact pressure.

摘要翻译： 在包括可随时拆卸的两个匹配元件的电插头连接中，为了避免在一件设备的组装过程中将一个元件推到另一个元件上的困难以及由此造成的不确定的接触压力， 匹配元件被连接以形成可以随后被分离的插头单元，作为制造操作的一部分，从而当它们被推在一起并确保适当的接触压力时确保良好的对准。

公开(公告)号：US20140332692A1

公开(公告)日：2014-11-13

申请号：US14125470

申请日：2012-06-18

申请人： Gerhard Lutz ,  Heike Soltau ,  Adrian Niculae

发明人： Gerhard Lutz ,  Heike Soltau ,  Adrian Niculae

IPC分类号： H01L31/115 ,  G01T1/24 ,  H01L27/144 ,  H01L31/02

CPC分类号： H01L31/115 ,  G01T1/247 ,  G01T1/2928 ,  H01J37/244 ,  H01J2237/2442 ,  H01J2237/2448 ,  H01L27/1443 ,  H01L31/02005 ,  H01L31/022416

摘要： The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h·f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (θ), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (θ), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS). The invention provides for the semiconductor drift detector to be optionally operable in a first operating mode or in a second operating mode, wherein the semiconductor drift detector in the first operating mode measures the photon energy of the incident photons (h·f), whereas the semiconductor drift detector in the second operating mode measures the signal charge carrier current. Furthermore, the invention encompasses a corresponding operating method.

摘要翻译： 本发明涉及一种用于检测辐射的半导体漂移检测器，其包括半导体衬底（HS），其中在操作期间产生信号电荷载流子，由具有特定光子能量的入射光子（h·f）精确地，更具体地， X射线荧光辐射的形式和/或具有特定信号电荷载流子的入射电子（＆amp; thetas），更特别地以反向散射电子的形式（＆Theta），并且包括读出的阳极 （A），用于以取决于信号电荷载流子的方式产生电输出信号，并且包括用于擦除积聚在半导体衬底（HS）中的信号电荷载流子的擦除接触件（RC）。 本发明提供半导体漂移检测器可选地在第一操作模式或第二操作模式中可操作，其中第一操作模式中的半导体漂移检测器测量入射光子（h·f）的光子能量，而 半导体漂移检测器在第二种工作模式下测量信号载流子电流。 此外，本发明包括相应的操作方法。

公开(公告)号：US20110095388A1

公开(公告)日：2011-04-28

申请号：US12672102

申请日：2008-06-18

申请人： Rainer Richter ,  Ladislav Andricek ,  Gerhard Lutz

发明人： Rainer Richter ,  Ladislav Andricek ,  Gerhard Lutz

IPC分类号： H01L31/0232

CPC分类号： H01L31/107 ,  H01L27/1446

摘要： The invention relates to an avalanche photodiode (1) for detecting radiation, including a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also including a contact-making layer (12) at the underside (10) of the semiconductor substrate (11), a laterally delimited quenching resistance layer (18) arranged in the semiconductor substrate (11) between the lower diode layer (16) and the contact-making layer (12), wherein the quenching resistance layer (18) quenches the radiation-generated avalanche breakdown in the avalanche region, and also including a depletion electrode (15) arranged laterally alongside the laterally delimited lower diode layer (16), such that the depletion electrode (15) depletes the semiconductor substrate (11) laterally alongside the laterally delimited lower diode layer (16), while the quenching resistance layer (18) is screened from the depletion electrode (15) by the lower diode layer (16) and is therefore not depleted.

摘要翻译： 本发明涉及一种用于检测辐射的雪崩光电二极管（1），包括半导体衬底（11），上二极管层（15），相对掺杂的横向限定的下二极管层（16），位于上层 二极管层（15）和下二极管层（16），其中待检测的辐射触发雪崩区域中的雪崩击穿，并且还包括在半导体衬底的下侧（10）处的接触形成层（12） （11），布置在所述下二极管层（16）和所述接触形成层（12）之间的所述半导体衬底（11）中的横向限定的淬火电阻层（18），其中所述淬火电阻层（18）使所述辐射 在雪崩区域中产生雪崩击穿，并且还包括沿横向限定的下二极管层（16）横向布置的耗尽电极（15），使得耗尽电极（15）耗尽半导体衬底（1） 1）横向地沿着横向限定的下二极管层（16），同时通过下二极管层（16）从消耗电极（15）屏蔽淬火电阻层（18），因此不会耗尽。

公开(公告)号：US4982253A

公开(公告)日：1991-01-01

申请号：US189633

申请日：1988-05-03

申请人： Josef Kemmer ,  Gerhard Lutz

发明人： Josef Kemmer ,  Gerhard Lutz

IPC分类号： H01L27/10 ,  H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H01L31/02 ,  H01L31/0248 ,  H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/148

摘要： In a semiconductor element having a semiconductor body, an electrode structure is arranged on at least one major surface of the element for storing charge carriers of at least one conductivity in cells formed by the electrode structure. Control electrodes which are at least partially enclosed in the semiconductor body are arranged in at least one plane essentially parallel to the major surface of the semiconductor body. The control electrodes similarly enable charge carriers to be stored in defined cells. The control electrodes stored also make it possible to shift stored charges from one cell to another, whereby at least two independent charge images can be stored in a three-dimensionally arranged storage cell pattern.

摘要翻译： 在具有半导体本体的半导体元件中，电极结构布置在元件的至少一个主表面上，用于在由电极结构形成的电池中存储至少一种导电性的电荷载体。 至少部分地封装在半导体本体中的控制电极布置在基本上平行于半导体主体的主表面的至少一个平面中。 控制电极类似地使电荷载体能够存储在限定的单元中。 存储的控制电极还可以将存储的电荷从一个单元移位到另一个单元，由此至少两个独立的电荷图像可以存储在三维布置的存储单元图案中。

公开(公告)号：US07238949B2

公开(公告)日：2007-07-03

申请号：US10509320

申请日：2003-03-27

申请人： Lothar Struder ,  Gerhard Lutz ,  Rainer Richter

发明人： Lothar Struder ,  Gerhard Lutz ,  Rainer Richter

IPC分类号： G01T1/20 ,  H01L27/10

CPC分类号： H01L31/115 ,  G01T1/2928 ,  H01L27/14603 ,  H01L31/02002 ,  H01L31/022408 ,  H01L31/03529 ,  Y02E10/50

摘要： The invention relates to a conductor crossover for a semiconductor detector, particularly for a drift detector for conducting X-ray spectroscopy. The conductor crossover comprises at least two doped semiconductor electrodes (2), which are placed inside a semiconductor substrate (1), at least one connecting conductor (M), which is guided over the semiconductor electrodes (2), and a first insulating layer (Ox). An intermediate electrode (L) is situated between the connecting conductor (M) and the first insulation layer (Ox). Said intermediate electrode overlaps the area of the semiconductor substrate (1) between the semiconductor electrodes (2) and is electrically insulated from the connecting conductor (M) by at least one additional insulation layer (I). The invention also relates to a drift detector equipped with a conductor crossover of this type and to a detector arrangement for conducting X-ray spectroscopy.

摘要翻译： 本发明涉及用于半导体检测器的导体交叉，特别是用于进行X射线光谱的漂移检测器。 导体交叉包括放置在半导体衬底（1）内的至少两个掺杂半导体电极（2），被引导到半导体电极（2）上的至少一个连接导体（M）和第一绝缘层 （牛）。 中间电极（L）位于连接导体（M）和第一绝缘层（Ox）之间。 所述中间电极与半导体电极（2）之间的半导体衬底（1）的区域重叠，并且通过至少一个附加绝缘层（I）与连接导体（M）电绝缘。 本发明还涉及一种配备有这种类型的导体交叉的漂移检测器和用于进行X射线光谱的检测器装置。