公开(公告)号：US08013340B2

公开(公告)日：2011-09-06

申请号：US12242101

申请日：2008-09-30

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L29/04

CPC分类号： H01L29/7813 ,  H01L23/3171 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0653 ,  H01L29/41766 ,  H01L29/7397 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor body with a front-sided surface. An active cell region with a semiconductor device structure and an edge region surrounding the active cell region are arranged in the semiconductor body. The front-sided surface of the semiconductor body includes a passivation layer over the edge region and over the active cell region. The passivation layer includes a semiconducting insulation layer of a semiconducting material, the bandgap of which is greater than the bandgap of the material of the semiconductor body.

摘要翻译： 半导体器件包括具有前表面的半导体本体。 具有半导体器件结构的活性单元区域和围绕有源单元区域的边缘区域布置在半导体本体中。 半导体主体的前侧表面包括边缘区域上方和活性电池区域上方的钝化层。 钝化层包括半导体材料的半导体绝缘层，其带隙大于半导体本体材料的带隙。

公开(公告)号：US20110019835A1

公开(公告)日：2011-01-27

申请号：US12742907

申请日：2008-11-17

申请人： Gerhard Schmidt ,  Tobias Wolff ,  Markus Buck ,  Olga González Valbuena ,  Günther Wirsching

发明人： Gerhard Schmidt ,  Tobias Wolff ,  Markus Buck ,  Olga González Valbuena ,  Günther Wirsching

IPC分类号： G10K11/16 ,  H04R3/00

CPC分类号： H04R29/00 ,  G10L21/0272 ,  G10L2021/02166 ,  H04R3/005

摘要： The present invention relates to a method for localizing a sound source, in particular, a human speaker, comprising detecting sound generated by the sound source by means of a microphone array comprising more than two microphones and obtaining microphone signals, one for each of the microphones, selecting from the microphone signals a pair of microphone signals for a predetermined frequency range based on the distance of the microphones to each other and estimating the angle of the incidence of the sound on the microphone array based on the selected pair of microphone signals.

摘要翻译： 本发明涉及一种用于定位声源，特别是人类扬声器的方法，包括通过包括两个以上麦克风的麦克风阵列检测声源产生的声音并获得麦克风信号，每个麦克风 基于麦克风彼此的距离，基于所选择的一对麦克风信号估计麦克风阵列上的声音的入射角度，从麦克风选择一个麦克风信号达到预定频率范围。

公开(公告)号：US20100320536A1

公开(公告)日：2010-12-23

申请号：US12486471

申请日：2009-06-17

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L29/78

CPC分类号： H01L29/802 ,  H01L29/0696 ,  H01L29/408 ,  H01L29/432 ,  H01L29/66431 ,  H01L29/739

摘要： Disclosed is a transistor component having a control structure with a channel control layer of an amorphous semiconductor insulating material extending in a current flow direction along a channel zone.

摘要翻译： 公开了一种具有控制结构的晶体管组件，其具有沿着沟道区沿电流流动方向延伸的非晶半导体绝缘材料的沟道控制层。

公开(公告)号：US20100246851A1

公开(公告)日：2010-09-30

申请号：US12749066

申请日：2010-03-29

申请人： Markus Buck ,  Tobias Wolff ,  Toby Christian Lawin-Ore ,  Samuel Ngouoko Mboungueng ,  Gerhard Schmidt

发明人： Markus Buck ,  Tobias Wolff ,  Toby Christian Lawin-Ore ,  Samuel Ngouoko Mboungueng ,  Gerhard Schmidt

IPC分类号： H04B15/00

CPC分类号： G10K11/002 ,  G10L21/0208 ,  G10L2021/02165 ,  G10L2021/02166 ,  H04R3/005 ,  H04R2499/13

摘要： The invention provides a method for determining a noise reference signal for noise compensation and/or noise reduction. A first audio signal on a first signal path and a second audio signal on a second signal path are received. The first audio signal is filtered using a first adaptive filter to obtain a first filtered audio signal. The second audio signal is filtered using a second adaptive filter to obtain a second filtered audio signal. The first and the second filtered audio signal are combined to obtain the noise reference signal. The first and the second adaptive filter are adapted such as to minimize a wanted signal component in the noise reference signal.

摘要翻译： 本发明提供了一种用于确定用于噪声补偿和/或降噪的噪声参考信号的方法。 接收第一信号路径上的第一音频信号和第二信号路径上的第二音频信号。 使用第一自适应滤波器对第一音频信号进行滤波，以获得第一滤波音频信号。 使用第二自适应滤波器对第二音频信号进行滤波，以获得第二滤波音频信号。 第一和第二滤波音频信号被组合以获得噪声参考信号。 第一和第二自适应滤波器适于使噪声参考信号中的有用信号分量最小化。

公开(公告)号：US20100239104A1

公开(公告)日：2010-09-23

申请号：US12727045

申请日：2010-03-18

申请人： Bernd Iser ,  Gerhard Schmidt ,  Mathias Roder

发明人： Bernd Iser ,  Gerhard Schmidt ,  Mathias Roder

IPC分类号： H04B15/00

CPC分类号： H03G3/32 ,  G10L21/0208 ,  G10L21/0232 ,  G10L2021/02163

摘要： A noise attenuation system attenuates noise in an input signal. The system may estimate a power of the input signal, and determine a noise power value based on the input power estimate. The noise power value corresponds to an estimate of a noise power within the input signal. The system may determine an attenuation factor based on the noise power value, and attenuate the input signal by using the attenuation factor.

摘要翻译： 噪声衰减系统衰减输入信号中的噪声。 系统可以估计输入信号的功率，并且基于输入功率估计来确定噪声功率值。 噪声功率值对应于输入信号内的噪声功率的估计。 该系统可以基于噪声功率值确定衰减因子，并且通过使用衰减因子衰减输入信号。

公开(公告)号：US07476931B2

公开(公告)日：2009-01-13

申请号：US11592743

申请日：2006-11-03

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L29/76

CPC分类号： H01L29/7397 ,  H01L29/405 ,  H01L29/407

摘要： A vertical semiconductor device includes a vertical, active region including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a third semiconductor layer of the first conductivity type, a trench extending through the third semiconductor layer at least into the second semiconductor layer, the trench comprising a first portion bordering on the third semiconductor layer, and the trench comprising a second portion extending at least into the second semiconductor layer starting from the first portion, an insulating layer associated with a control terminal and at least partially arranged on a side wall of the first portion of the trench and at least partially extending into the second portion of the trench, and a resistive layer with a field-strength-dependent resistance and arranged in the second portion of the trench at least partially on the sidewall and the bottom of the trench.

摘要翻译： 垂直半导体器件包括垂直有源区，包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和第一导电类型的第三半导体层，延伸穿过第三半导体层的沟槽 至少在所述第二半导体层中，所述沟槽包括与所述第三半导体层接壤的第一部分，并且所述沟槽包括从所述第一部分开始至少延伸到所述第二半导体层的第二部分，与控制端子相关联的绝缘层 并且至少部分地布置在所述沟槽的所述第一部分的侧壁上并且至少部分地延伸到所述沟槽的所述第二部分中，以及电阻层，所述电阻层具有场强依赖性电阻并且布置在所述沟槽的所述第二部分中 至少部分地在沟槽的侧壁和底部上。

公开(公告)号：US20090008723A1

公开(公告)日：2009-01-08

申请号：US12166531

申请日：2008-07-02

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L29/06

CPC分类号： H01L21/26586 ,  H01L23/3178 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/41766 ,  H01L29/66136 ,  H01L29/6634 ,  H01L29/66727 ,  H01L29/7396 ,  H01L29/7811 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： A semiconductor component includes a semiconductor body having a first side, a second side, an edge delimiting the semiconductor body in a lateral direction, an inner region and an edge region. A first semiconductor zone of a first conduction type is arranged in the inner region and in the edge region. A second semiconductor zone of a second conduction type is arranged in the inner region and adjacent to the first semiconductor zone. A trench is arranged in the edge region and has first and second sidewalls and a bottom, and extends into the semiconductor body. A doped first sidewall zone of the second conduction type is adjacent to the first sidewall of the trench. A doped second sidewall zone of the second conduction type is adjacent to the second sidewall of the trench. A doped bottom zone of the second conduction type is adjacent to the bottom of the trench. Doping concentrations of the sidewall zones are lower than a doping concentration of the bottom zone.

摘要翻译： 半导体部件包括半导体本体，其具有第一侧，第二侧，在横向方向上限定半导体本体的边缘，内部区域和边缘区域。 第一导电类型的第一半导体区域布置在内部区域和边缘区域中。 第二导电类型的第二半导体区域布置在内部区域中且与第一半导体区域相邻。 沟槽设置在边缘区域中并且具有第一和第二侧壁和底部，并延伸到半导体本体中。 第二导电类型的掺杂的第一侧壁区域与沟槽的第一侧壁相邻。 第二导电类型的掺杂第二侧壁区域与沟槽的第二侧壁相邻。 第二导电类型的掺杂底部区域与沟槽的底部相邻。 侧壁区域的掺杂浓度低于底部区域的掺杂浓度。

公开(公告)号：US20080031468A1

公开(公告)日：2008-02-07

申请号：US11753255

申请日：2007-05-24

申请人： Markus Christoph ,  Tim Haulick ,  Gerhard Schmidt

发明人： Markus Christoph ,  Tim Haulick ,  Gerhard Schmidt

IPC分类号： G10K11/16

CPC分类号： H04R3/02 ,  G10K11/178 ,  G10K2210/503 ,  G10K2210/506 ,  H04R2499/13

摘要： System and method for improving the acoustical communication between interlocutors in at least two positions in a room, comprising generating electrical signals representative of acoustical signals present at the respective interlocutor positions; amplifying each of said electrical signals; and converting said amplified electrical signals into acoustical signals; wherein said electrical signals are each delayed with a delay time such that the acoustical signal arriving first at one of the interlocutor positions originates from the direction of the other interlocutor position.

摘要翻译： 一种用于改善房间中至少两个位置的对话者之间的声学​​通信的系统和方法，包括产生表示存在于各个对讲机位置的声学信号的电信号; 放大每个所述电信号; 并将所述放大的电信号转换成声信号; 其中所述电信号各自以延迟时间延迟，使得首先到达对话者位置中的一个的声信号来自另一个对话者位置的方向。

公开(公告)号：US07187058B2

公开(公告)日：2007-03-06

申请号：US11014193

申请日：2004-12-16

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L29/06

CPC分类号： H01L23/3171 ,  H01L23/3185 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/408 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

摘要： The invention relates to a semiconductor component having a semiconductor body (100) and at least one pn junction present in the semiconductor body (100) and an amorphous passivation layer (70) arranged at least in sections on a surface (101) of the semiconductor body (100), the following holding true for the minimum Ds,min of an interface state density Ds at the junction between the passivation layer (70) and the semiconductor body (100): D s , min ≥ N S , Bd E g where NS,Bd is the breakdown charge and Eg is the band gap of the semiconductor material used for the semiconductor body (100).

摘要翻译： 本发明涉及一种具有半导体本体（100）和存在于半导体本体（100）中的至少一个pn结的半导体部件和至少部分地布置在半导体本体（100）的表面（101）上的非晶钝化层（70） 主体（100），对于钝化层（70）和半导体本体（100）之间的接合处的界面状态密度Ds的最小Ds，min的最小值为以下值：