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公开(公告)号：US06784425B1
公开(公告)日：2004-08-31
申请号：US10008253
申请日：2001-11-09
申请人： Gian Francesco Lorusso , Laurence Stuart Hordon , Sander Josef Gubbens , Douglas Keith Masnaghetti
发明人： Gian Francesco Lorusso , Laurence Stuart Hordon , Sander Josef Gubbens , Douglas Keith Masnaghetti
IPC分类号： H01J4700
CPC分类号： H01J37/28 , H01J2237/22 , H01J2237/2804
摘要： The present invention pertains to a technique of electron spectroscopic imaging that is easy to perform and cost effective. This technique allows for spatial resolution enhancement of electron beam semiconductor inspection systems (for example a critical dimension scanning electron microscope CD-SEM) as well as to obtain useful physical or chemical information on the investigated specimen. The technique involves a high pass energy filter that is alternately set, or multiplexed, at two energies. For an inspected area on a specimen, the detected intensity level at the higher energy setting is subtracted from the intensity level at the lower energy setting. The obtained differential value corresponds to electrons having energy within the range of the first and second filter settings. This obtained differential value is used to generate an image of the specimen for inspection purposes.
摘要翻译： 本发明涉及易于执行和成本有效的电子分光成像技术。 该技术允许电子束半导体检查系统（例如临界尺寸扫描电子显微镜CD-SEM）的空间分辨率增强，以及获得关于被研究样本的有用的物理或化学信息。 该技术涉及在两个能量下交替地设置或多路复用的高通能量滤波器。 对于样本上的检查区域，在较低能量设置下从强度水平减去较高能量设定下的检测强度水平。 获得的微分值对应于具有在第一和第二滤波器设置范围内的能量的电子。 该获得的差分值用于产生用于检查目的的样本的图像。
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公开(公告)号：US20120099092A1
公开(公告)日：2012-04-26
申请号：US13282175
申请日：2011-10-26
CPC分类号： G03F7/70916 , G03F7/7085 , Y10T29/49
摘要： A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual minors of the optics of the system.
摘要翻译： 公开了一种用于感测应用系统中的污染的传感器。 在一个方面，传感器包括盖层。 当传感器设置在系统中时，传感器适于在盖层上初始形成第一污染层时引起第一反射率变化。 第一反射率变化大于在覆盖层上形成较厚污染层时的平均反射率变化，并且大于在系统的光学器件的实际未成年体上形成相等污染物时的平均反射率变化。
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公开(公告)号：US20120075604A1
公开(公告)日：2012-03-29
申请号：US13239052
申请日：2011-09-21
申请人： Gian Francesco Lorusso , Sang Lee
发明人： Gian Francesco Lorusso , Sang Lee
IPC分类号： G03B27/54
CPC分类号： G03F7/7085 , G03F1/24 , G03F1/84 , G03F7/70525 , G03F7/70616 , G03F7/70783
摘要： Disclosed are methods and systems for determining a topography of a lithographic optical element and/or a holder of a lithographic optical element. In one embodiment, the method includes directing electromagnetic radiation towards a lithographic optical element, where the electromagnetic radiation comprises electromagnetic radiation in a first predetermined wavelength range and electromagnetic radiation in a second predetermined wavelength range. The method further includes using the lithographic optical element to adsorb the electromagnetic radiation in the first predetermined wavelength range, and to reflect at least a portion of the electromagnetic radiation in the second predetermined wavelength range towards a substrate comprising a photosensitive layer, thereby exposing the photosensitive layer to form an exposed photosensitive layer. The method still further includes performing an evaluation of the exposed photosensitive layer and, based on the evaluation, determining a topography of the lithographic optical element.
摘要翻译： 公开了用于确定光刻光学元件和/或平版印刷光学元件的保持器的形貌的方法和系统。 在一个实施例中，该方法包括将电磁辐射引向平版印刷光学元件，其中电磁辐射包括在第一预定波长范围内的电磁辐射和在第二预定波长范围内的电磁辐射。 该方法还包括使用平版印刷光学元件吸附第一预定波长范围内的电磁辐射，并将第二预定波长范围内的电磁辐射的至少一部分反射到包含光敏层的基片上，从而使感光层 以形成曝光的感光层。 该方法还包括执行曝光的感光层的评估，并且基于评估，确定平版印刷光学元件的形貌。
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公开(公告)号：US20090103069A1
公开(公告)日：2009-04-23
申请号：US12236446
申请日：2008-09-23
CPC分类号： G03F7/70916 , G03F7/7085 , Y10T29/49
摘要： A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual mirrors of the optics of the system.
摘要翻译： 公开了一种用于感测应用系统中的污染的传感器。 在一个方面，传感器包括盖层。 当传感器设置在系统中时，传感器适于在盖层上初始形成第一污染层时引起第一反射率变化。 第一反射率变化大于在覆盖层上形成较厚污染层时的平均反射率变化，并且大于在系统光学器件的实际反射镜上形成相等污染物时的平均反射率变化。
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公开(公告)号：US06930308B1
公开(公告)日：2005-08-16
申请号：US10265520
申请日：2002-10-03
申请人： Gian Francesco Lorusso , Robert Anthony Watts , Alexander Jozef Gubbens , Laurence Stuart Hordon
发明人： Gian Francesco Lorusso , Robert Anthony Watts , Alexander Jozef Gubbens , Laurence Stuart Hordon
IPC分类号： G01Q20/00 , G01Q30/02 , G01N23/00 , G01N23/225 , G01Q30/04
CPC分类号： G01N23/2251 , H01J2237/226 , H01J2237/2611 , H01J2237/28
摘要： A highly accurate technique for inspecting semiconductor devices is described. The technique involves utilizing multiple sets of measurement data obtained by a scanning electron microscope (SEM) to determine the dimensional parameters of a semiconductor device. The SEM collects each set of data from a different angular orientation with respect to the device. The dimensional parameters of the semiconductor device are determined by analyzing the relationship between the SEM inspection angle and the collected data sets. Various configurations of an SEM can be used to implement this invention. For instance an electron beam inspection system of the present invention can have at least two sets of deflectors for guiding the electron beam, a swiveling specimen stage, and/or a set of detectors set about the specimen at different angular orientations.
摘要翻译： 描述了用于检查半导体器件的高精度技术。 该技术涉及利用扫描电子显微镜（SEM）获得的多组测量数据来确定半导体器件的尺寸参数。 SEM从相对于设备的不同角度取向收集每组数据。 通过分析SEM检查角度与收集的数据集之间的关系来确定半导体器件的尺寸参数。 可以使用SEM的各种构造来实现本发明。 例如，本发明的电子束检查系统可以具有用于引导电子束的至少两组偏转器，旋转样品台和/或在不同角度方向上围绕样本设置的一组检测器。
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公开(公告)号：US08006202B2
公开(公告)日：2011-08-23
申请号：US12035343
申请日：2008-02-21
申请人： Gian Francesco Lorusso , In Sung Kim , Byeong Soo Kim , Anne-Marie Goethals , Rik Jonckheere , Jan Hermans
发明人： Gian Francesco Lorusso , In Sung Kim , Byeong Soo Kim , Anne-Marie Goethals , Rik Jonckheere , Jan Hermans
CPC分类号： G03F7/70433 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70283
摘要： A method of designing a lithographic mask for use in lithographic processing of a substrate is disclosed. The lithographic processing comprises irradiating mask features of a lithographic mask using a predetermined irradiation configuration. In one aspect, the method comprises obtaining an initial design for the lithographic mask comprising a plurality of initial design features having an initial position. The method further comprises applying at least one shift to at least one initial design feature and deriving there from an altered design so as to compensate for shadowing effects when irradiating the substrate using a lithographic mask corresponding to the altered design in the predetermined irradiation configuration. Also disclosed herein are a corresponding design, a method of setting up lithographic processing, a system for designing a lithographic mask, a lithographic mask, and a method of manufacturing it.
摘要翻译： 公开了一种设计用于基板的光刻处理的光刻掩模的方法。 光刻处理包括使用预定的照射结构照射光刻掩模的掩模特征。 在一个方面，该方法包括获得包括具有初始位置的多个初始设计特征的光刻掩模的初始设计。 该方法还包括将至少一个移位应用于至少一个初始设计特征并从改变的设计中导出，以便在使用与预定辐射配置中的改变的设计相对应的光刻掩模照射基板时补偿遮蔽效应。 本文还公开了相应的设计，设置光刻处理的方法，用于设计光刻掩模的系统，光刻掩模及其制造方法。
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17.发明授权公开(公告)号：US07750319B2
公开(公告)日：2010-07-06
申请号：US11846306
申请日：2007-08-28
IPC分类号： G21K5/04
CPC分类号： G01N21/94 , G01N2021/95676 , G03F7/70591 , G03F7/70916
摘要： A method and system for measuring contamination of a lithographic element is disclosed. In one aspect, the method comprises providing a first lithographical element in a process chamber. The method further comprises providing a second lithographical element in the process chamber. The method further comprises covering part of the first lithographical element providing a reference region. The method further comprises providing a contaminant in the process chamber. The method further comprises redirecting an exposure beam via the test region of the first lithographical element towards the second lithographical element whereby at least one of the lithographical elements gets contaminated by the contaminant. The method further comprises measuring the level of contamination of the at least one contaminated lithographical element in the process chamber.
摘要翻译： 公开了一种测量光刻元件污染的方法和系统。 一方面，该方法包括在处理室中提供第一光刻元件。 该方法还包括在处理室中提供第二光刻元件。 该方法还包括覆盖提供参考区域的第一光刻元件的一部分。 该方法还包括在处理室中提供污染物。 该方法还包括将曝光光束经由第一光刻元件的测试区域重定向到第二光刻元件，由此至少一个光刻元件被污染物污染。 该方法还包括测量处理室中的至少一种污染的光刻元件的污染水平。
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公开(公告)号：US20080315125A1
公开(公告)日：2008-12-25
申请号：US11846306
申请日：2007-08-28
IPC分类号： A61N5/00
CPC分类号： G01N21/94 , G01N2021/95676 , G03F7/70591 , G03F7/70916
摘要： A method and system for measuring contamination of a lithographic element is disclosed. In one aspect, the method comprises providing a first lithographical element in a process chamber. The method further comprises providing a second lithographical element in the process chamber. The method further comprises covering part of the first lithographical element providing a reference region. The method further comprises providing a contaminant in the process chamber. The method further comprises redirecting an exposure beam via the test region of the first lithographical element towards the second lithographical element whereby at least one of the lithographical elements gets contaminated by the contaminant. The method further comprises measuring the level of contamination of the at least one contaminated lithographical element in the process chamber.
摘要翻译： 公开了一种测量光刻元件污染的方法和系统。 一方面，该方法包括在处理室中提供第一光刻元件。 该方法还包括在处理室中提供第二光刻元件。 该方法还包括覆盖提供参考区域的第一光刻元件的一部分。 该方法还包括在处理室中提供污染物。 该方法还包括将曝光光束经由第一光刻元件的测试区域重定向到第二光刻元件，由此至少一个光刻元件被污染物污染。 该方法还包括测量处理室中的至少一种污染的光刻元件的污染水平。
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公开(公告)号：US20080229273A1
公开(公告)日：2008-09-18
申请号：US12035343
申请日：2008-02-21
申请人： Gian Francesco Lorusso , In Sung Kim , Byeong Soo Kim , Anne-Marie Goethals , Rik Jonckheere , Jan Hermans
发明人： Gian Francesco Lorusso , In Sung Kim , Byeong Soo Kim , Anne-Marie Goethals , Rik Jonckheere , Jan Hermans
CPC分类号： G03F7/70433 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70283
摘要： A method of designing a lithographic mask for use in lithographic processing of a substrate is disclosed. The lithographic processing comprises irradiating mask features of a lithographic mask using a predetermined irradiation configuration. In one aspect, the method comprises obtaining an initial design for the lithographic mask comprising a plurality of initial design features having an initial position. The method further comprises applying at least one shift to at least one initial design feature and deriving there from an altered design so as to compensate for shadowing effects when irradiating the substrate using a lithographic mask corresponding to the altered design in the predetermined irradiation configuration. Also disclosed herein are a corresponding design, a method of setting up lithographic processing, a system for designing a lithographic mask, a lithographic mask, and a method of manufacturing it.
摘要翻译： 公开了一种设计用于基板的光刻处理的光刻掩模的方法。 光刻处理包括使用预定的照射结构照射光刻掩模的掩模特征。 在一个方面，该方法包括获得包括具有初始位置的多个初始设计特征的光刻掩模的初始设计。 该方法还包括将至少一个移位应用于至少一个初始设计特征并从改变的设计中导出，以便在使用与预定辐射配置中的改变的设计相对应的光刻掩模照射基板时补偿遮蔽效应。 本文还公开了相应的设计，设置光刻处理的方法，用于设计光刻掩模的系统，光刻掩模及其制造方法。
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