公开(公告)号：US06642112B1

公开(公告)日：2003-11-04

申请号：US09918364

申请日：2001-07-30

申请人： Brett D. Lowe ,  John A. Smythe ,  Timothy K. Carns

发明人： Brett D. Lowe ,  John A. Smythe ,  Timothy K. Carns

IPC分类号： H01L218234

CPC分类号： H01L21/823842 ,  H01L21/823864 ,  H01L21/823878

摘要： Non-oxidizing spacer densification method for producing semiconductor devices, such as MOSFET devices, and that may be implemented during semiconductor fabrication with little or substantially no polycide adhesion loss experienced during spacer densification. The method may be implemented to provide good polycide adhesion characteristics with reduced process complexity over conventional methods by eliminating the need for additional process steps such as metal silicide encapsulation or polysilicon surface treatments.

摘要翻译： 用于制造半导体器件（例如MOSFET器件）的非氧化间隔物致密化方法，并且可以在半导体制造期间实施，在间隔物致密化期间几乎没有或基本上没有聚硅氧烷粘附损失。 该方法可以实现以通过消除对附加工艺步骤（例如金属硅化物封装或多晶硅表面处理）的需要来提供优于常规方法的降低的工艺复杂性的良好的多晶硅化合物附着特性。

公开(公告)号：US08241944B2

公开(公告)日：2012-08-14

申请号：US12830079

申请日：2010-07-02

申请人： Joseph N. Greeley ,  John A. Smythe

发明人： Joseph N. Greeley ,  John A. Smythe

IPC分类号： H01L21/00

CPC分类号： H01L45/1683 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1633

摘要： The present disclosure includes a high density resistive random access memory (RRAM) device, as well as methods of fabricating a high density RRAM device. One method of forming an RRAM device includes forming a resistive element having a metal-metal oxide interface. Forming the resistive element includes forming an insulative material over the first electrode, and forming a via in the insulative material. The via is conformally filled with a metal material, and the metal material is planarized to within the via. A portion of the metal material within the via is selectively treated to create a metal-metal oxide interface within the via. A second electrode is formed over the resistive element.

摘要翻译： 本公开包括高密度电阻随机存取存储器（RRAM）装置，以及制造高密度RRAM装置的方法。 形成RRAM器件的一种方法包括形成具有金属 - 金属氧化物界面的电阻元件。 形成电阻元件包括在第一电极上形成绝缘材料，以及在绝缘材料中形成通孔。 通孔由金属材料共形填充，并且金属材料被平坦化到通孔内。 通孔内的金属材料的一部分被选择性地处理以在通孔内产生金属 - 金属氧化物界面。 第二电极形成在电阻元件上。

公开(公告)号：US06436195B1

公开(公告)日：2002-08-20

申请号：US09643777

申请日：2000-08-22

申请人： John A. Smythe ,  John E. Berg

发明人： John A. Smythe ,  John E. Berg

IPC分类号： C23C1600

CPC分类号： H01L21/02274 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3003 ,  H01L21/31625 ,  H01L21/76801

摘要： Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free radicals that are introduced into the dielectric layers. The hydrogen free radicals can affect the stability of the threshold and breakdown voltage of MOSFET transistors. Deuterium introduced into the CVD chamber competes to enter the dielectric layer with the hydrogen. The deuterium prevents some of the hydrogen free radicals from entering the dielectric layer and thus increases MOSFET reliability.

摘要翻译： 沉积的用于半导体器件的电介质层通常在化学气相沉积中形成。 通常形成氢副产物。 特别是在等离子体增强化学气相沉积工艺中，氢副产物可以形成引入电介质层的自由基。 氢自由基可以影响MOSFET晶体管的阈值和击穿电压的稳定性。 引入CVD室的氘与氢气竞争进入电介质层。 氘可防止一些氢自由基进入电介质层，从而提高MOSFET的可靠性。

公开(公告)号：US6156653A

公开(公告)日：2000-12-05

申请号：US962828

申请日：1997-11-03

申请人： John A. Smythe ,  John E. Berg

发明人： John A. Smythe ,  John E. Berg

IPC分类号： C23C16/40 ,  H01L21/30 ,  H01L21/316 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/02274 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3003 ,  H01L21/31625 ,  H01L21/76801

摘要： Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free radicals that are introduced into the dielectric layers. The hydrogen free radicals can affect the stability of the threshold and breakdown voltage of MOSFET transistors. Deuterium introduced into the CVD chamber competes to enter the dielectric layer with the hydrogen. The deuterium prevents some of the hydrogen free radicals from entering the dielectric layer and thus increases MOSFET reliability.