公开(公告)号：US20230350238A1

公开(公告)日：2023-11-02

申请号：US17661249

申请日：2022-04-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Wayne Victor Sorin ,  Stanley Cheung

IPC: G02F1/025 ,  G02F1/225 ,  G02F1/015

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F1/0151 ,  G02F1/212

Abstract: Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.

公开(公告)号：US11342472B2

公开(公告)日：2022-05-24

申请号：US16902135

申请日：2020-06-15

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Zhihong Huang ,  Di Liang ,  Yuan Yuan

IPC: H01L21/00 ,  H01L29/861 ,  H01L31/105 ,  H01L31/028 ,  H04B10/66 ,  H01L27/144 ,  H01L31/18 ,  H04J14/02

Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.

公开(公告)号：US20250035850A1

公开(公告)日：2025-01-30

申请号：US18358468

申请日：2023-07-25

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Yiwei Peng ,  Stanley Cheung ,  Geza Kurczveil ,  Yuan Yuan ,  Zhihong Huang ,  Marco Fiorentino

IPC: G02B6/293 ,  G02B6/35 ,  G02F1/025

Abstract: An example optical system having an optical supply sub-system for supplying light to a photonic integrated circuit is presented. The optical supply sub-system includes a primary light source, an auxiliary light source, a first optical coupler, and a second optical coupler. The first optical coupler includes a first metal-oxide-semiconductor capacitor microring resonator (MOSCAP MRR) and the first optical coupler includes a second MOSCAP MRR. The first optical coupler is coupled to the primary light source and the photonic integrated circuit to control the propagation of the primary light to the photonic integrated circuit. The auxiliary light source may be configured to generate an auxiliary light when the primary light source malfunctions and the first MOSCAP MRR and the second MOSCAP MRR are controlled to control propagation of the auxiliary light from the auxiliary light source to the photonic integrated circuit.

公开(公告)号：US12013573B2

公开(公告)日：2024-06-18

申请号：US17812554

申请日：2022-07-14

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yiwei Peng ,  Yuan Yuan ,  Zhihong Huang

IPC: G02B6/12 ,  G02B6/125 ,  G02B6/293 ,  G02F1/015 ,  G02B6/122

CPC classification number: G02B6/29338 ,  G02B6/12004 ,  G02B6/125 ,  G02B6/29343 ,  G02F1/015 ,  G02B6/1225 ,  G02F2201/58

Abstract: Examples described herein relate to an optical resonating device. The optical resonating device includes a primary waveguide, a microring resonator, and a microring resonator photodiode. The primary waveguide allows a passage of an optical signal. The microring resonator is formed adjacent to the primary waveguide to couple therein a portion of the optical signal passing through the primary waveguide. Furthermore, the microring resonator photodiode is formed adjacent to the microring resonator to measure an intensity of the portion of the optical signal coupled into the microring resonator.

公开(公告)号：US12013568B2

公开(公告)日：2024-06-18

申请号：US17695673

申请日：2022-03-15

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Stanley Cheung ,  Yuan Yuan ,  Di Liang ,  Raymond G. Beausoleil

IPC: G02B6/12 ,  G02F1/025 ,  H01S5/026

CPC classification number: G02B6/12004 ,  G02F1/025 ,  H01S5/026 ,  G02B2006/12061

Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.

公开(公告)号：US11886020B2

公开(公告)日：2024-01-30

申请号：US17305892

申请日：2021-07-16

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Sudharsanan Srinivasan ,  Di Liang ,  Zhihong Huang

IPC: G02B6/42

CPC classification number: G02B6/4201

Abstract: Examples described herein relate to a ring resonator. The ring resonator may include an annular waveguide having a waveguide base and a waveguide core narrower than the waveguide base. Further, the ring resonator may include an outer contact region comprising a first-type doping and disposed annularly and at least partially surrounding an outer annular surface of the waveguide base. Furthermore, the ring resonator may include an inner contact region comprising a second-type doping and disposed annularly contacting an inner annular surface of the waveguide base. Moreover, the ring resonator may include an annular detector region disposed annularly at a distance from and covering at least a portion of a surface of the waveguide core and contacting the outer contact region.

公开(公告)号：US20230296831A1

公开(公告)日：2023-09-21

申请号：US17695673

申请日：2022-03-15

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Stanley Cheung ,  Yuan Yuan ,  Di Liang ,  Raymond G. Beausoleil

IPC: G02B6/12 ,  G02F1/025 ,  H01S5/026

CPC classification number: G02B6/12004 ,  G02F1/025 ,  H01S5/026 ,  G02B2006/12061

Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.

公开(公告)号：US11726264B2

公开(公告)日：2023-08-15

申请号：US17648250

申请日：2022-01-18

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Di Liang

IPC: G02B6/12 ,  G02B6/293 ,  H01L31/107

CPC classification number: G02B6/29338 ,  G02B6/12004 ,  G02B6/2934 ,  G02B6/29335 ,  H01L31/107 ,  G02B6/12019 ,  G02B2006/12123

Abstract: Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

公开(公告)号：US12242142B2

公开(公告)日：2025-03-04

申请号：US17661249

申请日：2022-04-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Wayne Victor Sorin ,  Stanley Cheung

IPC: G02F1/015 ,  G02F1/025 ,  G02F1/225 ,  G02F1/21 ,  H04B10/2507

Abstract: Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.

公开(公告)号：US20240329489A1

公开(公告)日：2024-10-03

申请号：US18192509

申请日：2023-03-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Yiwei Peng ,  Wayne Sorin ,  Yuan Yuan ,  Stanley Cheung ,  Thomas Van Vaerenbergh ,  Marco Fiorentino

IPC: G02F1/21 ,  G02F1/225 ,  G06N3/04

CPC classification number: G02F1/212 ,  G02F1/225 ,  G06N3/04 ,  G02F2203/50

Abstract: An example Mach-Zehnder interferometer (MZI) is provided. The MZI includes a first waveguide arm and a second waveguide arm coupled to the first waveguide arm via a pair of optical couplers. In the proposed MZI, at least one of the first waveguide arm and the second waveguide arm includes a plurality of Bragg-grating segments and a phase-shifter segment formed between adjacent Bragg-grating segments of the plurality of Bragg-grating segments. The phase-shifter segment formed between adjacent Bragg-grating segments induces a predefined phase-shift in an optical signal propagating through respective at least one of the first waveguide arm and the second waveguide arm, resulting in increased linearity an optical transmission via the MZI.