Optical logic gates
    11.
    发明授权

    公开(公告)号:US10386698B2

    公开(公告)日:2019-08-20

    申请号:US15565281

    申请日:2015-05-08

    Abstract: In the examples provided herein, an optical logic gate includes multiple couplers, where no more than two types of couplers are used in the optical logic gate, and further wherein the two types of couplers consist of: a 3-dB coupler and a weak coupler with a given transmission-to-reflection ratio. The optical logic gate also includes a first resonator, wherein the first resonator comprises a photonic crystal resonator or a nonlinear ring resonator, wherein in operation, the first resonator has a dedicated continuous wave input to bias a complex amplitude of a total field input to the first resonator such that the total field input is either above or below a nonlinear switching threshold of the first resonator, where the optical logic gate is an integrated photonic circuit.

    Grating apparatus for target phase changes

    公开(公告)号:US10436956B2

    公开(公告)日:2019-10-08

    申请号:US15224417

    申请日:2016-07-29

    Abstract: Examples include a method for fabricating a grating mirror using a computing device that comprises calculating a target phase change across the grating mirror. The target phase change may correspond to a target wavefront shape in a beam of light reflected from a grating patter. The method may also comprise generating the grating pattern comprising a plurality of lines with line widths, line period spacings, and line thicknesses corresponding to the target phase change across the grating mirror using the computing device. In such examples, a set of coordinates may be generated using the computing device with each coordinate identifying a location of a line of the plurality of lines, a line width of the line, a line period spacing of the line, and a line thickness of the line.

    Semiconductor devices
    17.
    发明授权

    公开(公告)号:US09846277B1

    公开(公告)日:2017-12-19

    申请号:US15222922

    申请日:2016-07-28

    CPC classification number: G02B6/122

    Abstract: Examples herein relate to semiconductor devices having contacts that provide low contact resistance for both p-type and n-type materials. An example semiconductor device includes a semiconductor device layer having at least one of a p-type material or a n-type material. A contact is manufactured on the semiconductor device layer with a complementary metal-oxide-semiconductor process. The contact includes a first layer having palladium coupled with a surface of the semiconductor device layer, a conducting second layer coupled with the first layer, and a third layer having germanium coupled with the second conducting layer.

    VASCULAR PATTERN DETECTION SYSTEMS
    18.
    发明申请

    公开(公告)号:US20170357843A1

    公开(公告)日:2017-12-14

    申请号:US15179156

    申请日:2016-06-10

    CPC classification number: G06K9/00087 G06K9/00013 G06K9/00114 G06K9/00885

    Abstract: In the examples provided herein, a vascular pattern recognition system integrated onto a portable card includes a vascular pattern detection system to obtain image data of blood vessels of a finger to be swiped across a detection area on the portable card, wherein the vascular pattern detection system includes a near infrared light source and an image sensor array. The vascular pattern recognition system also includes an image processor to process the image data to generate a scanned vascular pattern and compare the scanned vascular pattern to a pre-stored pattern stored on the portable card to authenticate the image data, and a security processor to generate a transaction code to authorize a transaction upon authentication of the image data.

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