公开(公告)号：US20240036365A1

公开(公告)日：2024-02-01

申请号：US17815403

申请日：2022-07-27

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yiwei Peng ,  Yuan Yuan ,  Stanley Cheung ,  Zhihong Huang

IPC: G02F1/025 ,  G02B6/12 ,  G02B6/34

CPC classification number: G02F1/025 ,  G02B6/12004 ,  G02B6/34

Abstract: Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.

公开(公告)号：US20230350238A1

公开(公告)日：2023-11-02

申请号：US17661249

申请日：2022-04-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Wayne Victor Sorin ,  Stanley Cheung

IPC: G02F1/025 ,  G02F1/225 ,  G02F1/015

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F1/0151 ,  G02F1/212

Abstract: Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.

公开(公告)号：US11588298B2

公开(公告)日：2023-02-21

申请号：US16909991

申请日：2020-06-23

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Stanley Cheung ,  Michael Renne Ty Tan ,  Binhao Wang ,  Wayne Victor Sorin ,  Chao-Kun Lin

IPC: H01S5/14 ,  H01S5/183 ,  H01S5/10 ,  H01S5/0687

Abstract: Coupled-cavity vertical cavity surface emitting lasers (VCSELs) are provided by the present disclosure. The coupled-cavity VCSEL can comprise a VCSEL having a first mirror, a gain medium disposed above the first mirror, and a second mirror disposed above the gain medium, wherein a first cavity is formed by the first mirror and the second mirror. A second cavity is optically coupled to the VCSEL and configured to reflect light emitted from the VCSEL back into the first cavity of the VCSEL. In some embodiments, the second cavity can be an external cavity optically coupled to the VCSEL through a coupling component. In some embodiments, the second cavity can be integrated with the VCSEL to form a monolithic coupled-cavity VCSEL. A feedback circuit can control operation of the coupled-cavity VCSEL so the output comprises a target high frequency signal.

公开(公告)号：US11177624B2

公开(公告)日：2021-11-16

申请号：US16588370

申请日：2019-09-30

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Stanley Cheung ,  Michael Renne Ty Tan ,  Wayne Sorin ,  Joaquin Matres Abril ,  Sagi Mathai

IPC: H01S5/02 ,  H01S5/14 ,  H01S3/106 ,  H01S5/10 ,  H01S5/40 ,  H01S5/02325 ,  H01S5/00 ,  H01S5/028 ,  H01S5/026 ,  H01S5/227 ,  H01S5/32 ,  H01S5/343

Abstract: Examples of the present disclosure include a tunable laser comprising a waveguide including gain section. The waveguide overlies and is optically coupled to another waveguide. The another waveguide has a reflector at one end. A laser cavity is formed in the waveguides.

公开(公告)号：US10795098B2

公开(公告)日：2020-10-06

申请号：US16229967

申请日：2018-12-21

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Binhao Wang ,  Wayne V. Sorin ,  Michael R. Tan ,  Stanley Cheung

IPC: G02B6/293 ,  H04B10/40 ,  G02B6/42 ,  H04J14/04 ,  H01S5/14

Abstract: A VCSEL transmitter includes a first VCSEL terminal disposed on a substrate and a second VCSEL terminal adjacent thereto. The transmitter also includes a first diffraction element within a first optical path of the first VCSEL terminal which receives and changes a first direction of a first light transmission having a low-order Laguerre Gaussian mode emitted from the first VCSEL terminal. The transmitter further includes a second diffraction element within a second optical path of the second VCSEL terminal which receives the second light transmission and converts the received light into a high-order Laguerre Gaussian mode. The transmitter also includes a mode combiner to direct the first light transmission into a lens which directs the light into a multi-mode optical fiber.

公开(公告)号：US10756839B1

公开(公告)日：2020-08-25

申请号：US16408350

申请日：2019-05-09

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Stanley Cheung ,  Michael Tan ,  Sagi Mathai ,  Wayne Victor Sorin ,  Paul Rosenberg

IPC: H04B10/00 ,  H04J14/02 ,  H04B10/40 ,  H04B10/2507

Abstract: A hybrid optical transceiver is provided. An optical component disposed on a substrate, the optical component comprising a transmitter section and a receiver section. Transmitter section comprises a plurality of vertical cavity surface emitting laser (VCSEL) arrays communicatively coupled to a plurality of multiplexers, configured to launch multiplexed optical signals into the lowest order mode group of a multimode fiber or the lowest order mode of a single mode fiber. Receiver section comprises a photodetector array comprising a plurality of optical detectors, and configured to receive demultiplexed optical signals of unknown polarization without routing waveguides. In various embodiments, each section being independently removable from a substrate.

公开(公告)号：US20250035850A1

公开(公告)日：2025-01-30

申请号：US18358468

申请日：2023-07-25

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Yiwei Peng ,  Stanley Cheung ,  Geza Kurczveil ,  Yuan Yuan ,  Zhihong Huang ,  Marco Fiorentino

IPC: G02B6/293 ,  G02B6/35 ,  G02F1/025

Abstract: An example optical system having an optical supply sub-system for supplying light to a photonic integrated circuit is presented. The optical supply sub-system includes a primary light source, an auxiliary light source, a first optical coupler, and a second optical coupler. The first optical coupler includes a first metal-oxide-semiconductor capacitor microring resonator (MOSCAP MRR) and the first optical coupler includes a second MOSCAP MRR. The first optical coupler is coupled to the primary light source and the photonic integrated circuit to control the propagation of the primary light to the photonic integrated circuit. The auxiliary light source may be configured to generate an auxiliary light when the primary light source malfunctions and the first MOSCAP MRR and the second MOSCAP MRR are controlled to control propagation of the auxiliary light from the auxiliary light source to the photonic integrated circuit.

公开(公告)号：US12013568B2

公开(公告)日：2024-06-18

申请号：US17695673

申请日：2022-03-15

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Stanley Cheung ,  Yuan Yuan ,  Di Liang ,  Raymond G. Beausoleil

IPC: G02B6/12 ,  G02F1/025 ,  H01S5/026

CPC classification number: G02B6/12004 ,  G02F1/025 ,  H01S5/026 ,  G02B2006/12061

Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.

公开(公告)号：US20240118582A1

公开(公告)日：2024-04-11

申请号：US17963027

申请日：2022-10-10

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： YIWEI PENG ,  Yuan YUAN ,  Stanley Cheung

IPC: G02F1/21 ,  G02F1/225 ,  G06N3/04 ,  G06N3/067

CPC classification number: G02F1/212 ,  G02F1/2257 ,  G06N3/0481 ,  G06N3/0675 ,  G02F2203/15

Abstract: Systems, devices, and methods are provided for all-optical reconfigurable activation devices for realizing various activations functions using low input optical power. The device and systems disclosed herein include a directional coupler comprising a first phase-shift mechanism and an interferometer coupled to the directional coupler. The interferometer comprises at least one microring resonator and a second phase-shift mechanism coupled to thereto. The interferometer and the directional coupler comprise waveguides formed of a first material, while the microring resonator comprises a waveguide formed of a second material and a third phase-shift mechanism. The second material is provided as a low-loss material having a high Kerr effect and large bandgaps, to generate various nonlinear activation functions. The first, second, and third phase-shift mechanisms are configured to control biases within the disclosed systems and devices to achieve a desired activation function.

公开(公告)号：US20240004259A1

公开(公告)日：2024-01-04

申请号：US17855690

申请日：2022-06-30

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Bassem Tossoun ,  Stanley Cheung

IPC: G02F1/225 ,  G02F1/21 ,  G02F1/025

CPC classification number: G02F1/2257 ,  G02F1/212 ,  G02F1/025

Abstract: A memristor-integrated Mach-Zehnder Interferometer (MZI) device is implemented having the capability to function as a new type of photonic device that can be further leveraged to implement a wide-range of photonic applications, such as photonic chips, PICs, optical FPGAs, and the like. The memristor-integrated MZI device distinctly incorporates the photonic capabilities of an MZI with the resistive memory capabilities of a memristor, in order to create a photonic device that supports optical/photonic functions on a component-level. For example, MZI circuitry can include two waveguides coupled to an output terminal, wherein the MZI circuitry produces an optical signal as output and propagates the output optical signal to the optical terminal; and a memristor integrated on one or the two waveguides of the MZI circuitry, wherein the memristor receives an electrical signal as input and causes a phase shift in the output optical signal from the MZI circuitry.