ACCELERATION SENSOR
    11.
    发明申请
    ACCELERATION SENSOR 审中-公开

    公开(公告)号:US20190162752A1

    公开(公告)日:2019-05-30

    申请号:US16127268

    申请日:2018-09-11

    Applicant: Hitachi, Ltd.

    Abstract: In an acceleration sensor detecting a vibration acceleration by using torsion of a beam joining a fixed portion and a membrane, a spring constant of the beam is decreased while an increase in a chip size due to extension of the beam is prevented, so that an acceleration sensor that is highly sensitive and small in a size is provided with a low price. A sensor of a capacitance detecting type includes a membrane having a stacking structure formed of two or more layers and a plurality of beams capable of twisting so that the membrane is movable in a detecting direction, a first beam of the plurality of beams is formed of the same layer as either an upper or a lower layer of the membrane, and a second beam thereof is formed of the same layer as either an upper or a lower layer of the movable portion.

    MEMS DEVICE
    12.
    发明申请
    MEMS DEVICE 审中-公开

    公开(公告)号:US20180346321A1

    公开(公告)日:2018-12-06

    申请号:US15912604

    申请日:2018-03-06

    Applicant: HITACHI, LTD.

    Abstract: An object of the invention is to provide a MEMS device that is easy to set a cavity inner pressure to a desired value by utilizing normally-used MEMS device manufacturing processes and process materials without increase in the number of processes of manufacturing the MEMS device. In order to solve the problem, as a typical MEMS device of the present invention, a MEMS device having a cavity includes an insulating film containing hydrogen in vicinity of the cavity and a hydrogen barrier film covering the insulating film.

    INERTIAL SENSOR
    14.
    发明申请
    INERTIAL SENSOR 有权
    惯性传感器

    公开(公告)号:US20160091524A1

    公开(公告)日:2016-03-31

    申请号:US14822419

    申请日:2015-08-10

    Applicant: HITACHI, LTD.

    Abstract: A low-noise and high-sensitivity inertial sensor is provided.On the assumption that a movable portion VU1 and a movable portion VU2 are formed in the same SOI layer, the movable portion VU1 and the movable portion VU2 are mechanically connected to each other by a mechanical coupling portion MCU even while these movable portions are electrically isolated from each other. Thereby, according to a sensor element SE in the invention, it is possible to further suppress a shift between the capacitance of a MEMS capacitor 1 and the capacitance of a MEMS capacitor 2.

    Abstract translation: 提供了低噪声,高灵敏度的惯性传感器。 假设可动部分VU1和可动部分VU2形成在相同的SOI层中,即使这些可动部分被电隔离,可移动部分VU1和可动部分VU2通过机械耦合部分MCU彼此机械连接 从彼此。 因此,根据本发明的传感器元件SE,可以进一步抑制MEMS电容器1的电容与MEMS电容器2的电容之间的偏移。

Patent Agency Ranking