Magnetically anisotropic binder-free films containing discrete hexaferrite nanoplatelets

    公开(公告)号:US11295882B1

    公开(公告)日:2022-04-05

    申请号:US16592477

    申请日:2019-10-03

    摘要: Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe12O19) and/or strontium hexaferrite (SrFe12O19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.

    Methods to design and uniformly co-fabricate small vias and large cavities through a substrate

    公开(公告)号:US10957537B2

    公开(公告)日:2021-03-23

    申请号:US16557811

    申请日:2019-08-30

    摘要: A method of forming concurrently openings in a substrate or wafer or a portion of substrate or wafer openings therein at least one of the openings has a relatively high aspect ratio and another one of the openings has a relatively low aspect ratio, the method comprising: bonding the substrate or wafer or a portion of substrate or wafer to a carrier substrate; forming a ring trench in the substrate or wafer or in a portion of the substrate or wafer, the ring trench having an outer perimeter that corresponds an outer perimeter of the another one of the openings having said relatively low aspect ratio and having an inner perimeter spaced from the outer perimeter by a predetermined distance; forming an opening in said substrate or wafer or in a portion of substrate or wafer having said high aspect ratio concurrently with the forming of the ring trench; and separating the substrate or wafer or in a portion of the substrate or wafer from the carrier substrate.

    Wafer-level integrated micro-structured heat spreaders

    公开(公告)号:US11721605B2

    公开(公告)日:2023-08-08

    申请号:US17345927

    申请日:2021-06-11

    摘要: An electronic assembly including: a wafer defining at least one cavity; a chip disposed in the cavity; and a metal heat spreader disposed in the cavity, the chip being embedded in the metal heat spreader; wherein the metal heat spreader has at least one elongate microstructure separated from a remainder of the metal heat spreader by at least one channel; wherein the metal heat spreader occupies an area within the cavity that is not occupied by the chip; and wherein the at least one elongate microstructure is configured and arranged in the cavity so as to improve thermal management of the chip by reducing stress across the chip as compared with a configuration and arrangement in which a heat spreader made of the metal and occupying the area within the cavity is a solid without channels. Also, a method for forming the electronic assembly.

    Low-temperature-deposited self-biased magnetic composite films containing discrete hexaferrite platelets

    公开(公告)号:US11434171B1

    公开(公告)日:2022-09-06

    申请号:US17109237

    申请日:2020-12-02

    摘要: Some variations provide a magnetically anisotropic structure comprising a magnetically anisotropic film on a substrate, wherein the magnetically anisotropic film contains a plurality of discrete magnetic hexaferrite particles, wherein the film is characterized by an average film thickness from 1 micron to 5 millimeters, and wherein the magnetically anisotropic film contains from 2 wt % to 75 wt % organic matter. Some variations provide a magnetically anisotropic structure comprising an out-of-plane magnetically anisotropic film on a substrate, wherein the magnetically anisotropic film contains a plurality of discrete magnetic hexaferrite particles, wherein the film is characterized by an average film thickness from 1 micron to 5 millimeters, and wherein the magnetically anisotropic film contains a concentration of hexaferrite particles of at least 40 vol %. The magnetically anisotropic structures are fabricated at low temperatures so that the magnetically anisotropic film may be monolithically integrated into an integrated-circuit fabrication process.

    Formation of high-resolution patterns inside deep cavities and applications to RF Si-embedded inductors

    公开(公告)号:US10032851B1

    公开(公告)日:2018-07-24

    申请号:US15724759

    申请日:2017-10-04

    摘要: A method for fabricating high-resolution features in a deep recess includes etching a cavity in a substrate, fabricating at least one focusing pattern on a bottom of the cavity, wherein fabricating the focusing pattern comprises coating a first photoresist on the bottom of the cavity, patterning the first photoresist to define a focusing etch area using contact lithography, and etching the focusing etch area, coating a second photoresist on the bottom of the cavity, using the focusing pattern to focus a high resolution lithography tool at the bottom of the cavity to pattern the second photoresist to define a microfabrication feature area; and forming a microfabrication feature in the microfabrication feature area.