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17 条记录 (耗时 0.015 秒)

    System and method for bonding a cable to a substrate using a die bonder
    2.
    发明授权
    System and method for bonding a cable to a substrate using a die bonder 有权

    公开(公告)号：US11540399B1

    公开(公告)日：2022-12-27

    申请号：US17167955

    申请日：2021-02-04

    申请人： HRL LABORATORIES, LLC

    发明人： Peter Brewer ,  Aurelio Lopez ,  Pamela R. Patterson

    IPC分类号： B23K1/00 ,  H05K3/34 ,  B23K3/00 ,  B23K101/42

    摘要： A method of bonding a double-ended cable to a multi-tier substrate (such as a multi-tier printed circuit board) includes picking up the double-ended cable, and imaging alignment markers on a first head of the double-ended cable, a second substrate of the multi-tier substrate, a second head of the double-ended cable, and a first substrate of the multi-tier substrate. The method also includes aligning the alignment marker on the first head of the cable to the alignment marker on the second substrate of the multi-tier substrate, coupling the first head of the cable to the second substrate, and releasing the first head of the cable. The method further includes aligning the alignment marker on the second head of the cable to the alignment marker on the first substrate of the multi-tier substrate, coupling the second head of the cable to the first substrate, and releasing the second head of the cable.

    Single chip scanning lidar and method of producing the same
    3.
    发明授权
    Single chip scanning lidar and method of producing the same 有权
    单片扫描激光雷达及其制作方法

    公开(公告)号：US09310471B2

    公开(公告)日：2016-04-12

    申请号：US14317695

    申请日：2014-06-27

    申请人： HRL LABORATORIES LLC

    发明人： Keyvan Sayyah ,  Pamela R. Patterson ,  Oleg M. Efimov

    IPC分类号： G01C3/08 ,  G01S7/481 ,  H01S5/026 ,  H01S5/02 ,  H01S5/12 ,  G01S17/02

    CPC分类号： G01S7/4817 ,  G01S7/4808 ,  G01S17/02 ,  G01S17/325 ,  G01S17/89 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0262 ,  H01S5/12

    摘要： A chip-scale scanning lidar includes a two dimensional (2D) scanning micromirror for a transmit beam and a 2D scanning micromirror for a receive beam, a laser diode and a photodetector, a first waveguide and first grating outcoupler coupled to a front facet of the laser diode, a second waveguide and a second grating outcoupler coupled to a rear facet of the laser diode on a substrate. A first fixed micromirror, a second micromirror, a third micromirror, and a focusing component are in a dielectric layer bonded to the substrate over the laser diode and photodetector. The photodetector is optically coupled to the second fixed micromirror and the third fixed micromirror for coherent detection.

    摘要翻译： 芯片级扫描激光雷达包括用于发射光束的二维（2D）扫描微镜和用于接收光束的2D扫描微镜，激光二极管和光电检测器，第一波导和第一光栅输出耦合器，其耦合到 激光二极管，第二波导和第二光栅输出耦合器，耦合到衬底上的激光二极管的后面。 第一固定微镜，第二微镜，第三微镜和聚焦组件位于激光二极管和光电检测器上结合到衬底的电介质层中。 光电检测器光耦合到第二固定微镜和第三固定微镜用于相干检测。

    Thermal management for heterogeneously integrated technology
    6.
    发明授权
    Thermal management for heterogeneously integrated technology 有权
    用于非均匀集成技术的热管理

    公开(公告)号：US09087854B1

    公开(公告)日：2015-07-21

    申请号：US14158962

    申请日：2014-01-20

    申请人： HRL Laboratories, LLC

    发明人： Wonill Ha ,  Hasan Sharifi ,  Tahir Hussain ,  James Chingwei Li ,  Pamela R. Patterson

    IPC分类号： H01L23/60 ,  H01L29/66 ,  H01L27/06 ,  H01L29/778

    CPC分类号： H01L29/66431 ,  H01L21/8252 ,  H01L21/8258 ,  H01L23/36 ,  H01L23/3677 ,  H01L27/0623 ,  H01L27/0688

    摘要： A method of three dimensional heterogeneous integration including forming HBT devices on a first substrate, each HBT device having a collector, removing the first substrate, forming first bonding pads on each collector of the heterojunction bipolar transistor devices, forming high electron mobility transistor (HEMT) devices on a first side of a growth substrate, wherein the growth substrate comprises a thermally conductive substrate, such as SiC or diamond, forming second bonding pads on the first side of the growth substrate, aligning and bonding the first bonding pads to the second bonding pads, forming CMOS devices on a Si substrate, bonding the CMOS devices on the Si substrate to a second side of the growth substrate, and forming selectively interconnects between the HBT devices, the HEMT devices, and the CMOS devices by forming vias and first and second level metal interconnects.

    摘要翻译： 一种三维非均匀集成的方法，包括在第一衬底上形成HBT器件，每个HBT器件具有集电极，去除第一衬底，在异质结双极晶体管器件的每个集电极上形成第一接合焊盘，形成高电子迁移率晶体管（HEMT） 生长衬底的第一侧上的器件，其中所述生长衬底包括诸如SiC或金刚石的导热衬底，在所述生长衬底的第一侧上形成第二接合焊盘，将所述第一接合焊盘对准和接合到所述第二接合 衬垫，在Si衬底上形成CMOS器件，将Si衬底上的CMOS器件接合到生长衬底的第二侧，以及通过形成通孔，首先形成通孔并在HBT器件，HEMT器件和CMOS器件之间选择性地形成互连 二级金属互连。