摘要:
A catadioptric projection objective for projecting a pattern arranged in the object plane of the projection objective into the image plane of the projection objective, having: a first objective part for projecting an object field lying in the object plane into a first real intermediate image; a second objective part for generating a second real intermediate image with the radiation coming from the first objective part; a third objective part for generating a third real intermediate image with the radiation coming from the second objective part; and a fourth objective part for projecting the third real intermediate image into the image plane.
摘要:
Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.
摘要:
A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface. The system has potential for very high numerical apertures at moderate lens material mass consumption.
摘要:
In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.
摘要:
An optical imaging system for a microlithography projection exposure system is used for imaging an object field arranged in an object plane of the imaging system into an image field arranged in an image plane of the imaging system. A projection objective or a relay objective to be used in the illumination system can be involved, in particular. The imaging system has a plurality of lenses that are arranged between the object plane and the image plane and in each case have a first lens surface and a second lens surface. At least one of the lenses is a double aspheric lens where the first lens surface and the second lens surface is an aspheric surface. Lenses of good quality that have the action of an asphere with very strong deformation can be produced in the case of double aspheric lenses with an acceptable outlay as regards the surface processing and testing of the lens surfaces.
摘要:
A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y′, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y′·NA2) and wherein the condition COMP1
摘要:
A projection objective of a microlithographic projection exposure apparatus (110) is designed for immersion operation in which an immersion liquid (134) adjoins a photosensitive layer (126). The refractive index of the immersion liquid is greater than the refractive index of a medium (L5; 142; L205; LL7; LL8; LL9). that adjoins the immersion liquid on the object side of the projection objective (120; 120′; 120″). The projection objective is designed such that the immersion liquid (134) is convexly curved towards the object plane (122) during immersion operation.
摘要:
A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with negative refractive power, a second lens group with positive refractive power, a third lens group with negative refractive power, a fourth lens group with positive refractive power and a fifth lens group with positive refractive power are provided. A constriction site of narrowest constriction of the beam bundle lies in the region of the waist. A waist distance AT exists between the object plane and the constriction site X. The condition AT/L≦0.4 holds for a distance ratio AT/L between the waist distance AT and an object-image distance L of the projection objective. Embodiments of inventive projection objectives reach very high numerical apertures NA>1.1 in conjunction with a large image field and are distinguished by a compact overall size and good correction of the lateral chromatic aberration.
摘要:
A method of adjusting a projection objective permits the projection objective to be adjusted between an immersion configuration and a dry configuration. The projection objective includes optical elements arranged along an optical axis thereof, which include a first group of elements following the object plane and a last optical element following the first group, which is arranged near the image plane. The last optical element defines an exit surface of the projection objective, which is arranged at a working distance from the image plane. The last optical element is substantially without refracting power and has no or only slight curvature. The method includes varying the thickness of the last optical element, changing the refractive index of the space between the exit surface and the image plane by introducing or removing an immersion medium, and axially displacing the last optical element to set a working distance.
摘要:
A catadioptric projection lens for imaging a pattern arranged in an object plane while creating a real intermediate image, having a catadioptric first lens section having a concave mirror and a beam-deflection device, as well as a dioptric second lens section that follows the catadioptric lens section, between its object plane and image plane. The beam-deflection device deflects radiation coming from the object plane to the concave mirror. Positive refractive power is arranged following the first reflective surface, between the latter and the concave mirror, within an optical near-field of the object plane, within which the height of the principal ray of the outermost field point of radiation coming from the object exceeds the marginal-ray height. The intermediate image is arranged prior to light which forms the intermediate image being reflected by a second reflective surface that is provided for the purpose of allowing arranging the object plane and image plane such that they will be parallel to one another.