公开(公告)号：US20080093691A1

公开(公告)日：2008-04-24

申请号：US12001567

申请日：2007-12-12

Applicant: Heinz Busta

Inventor： Heinz Busta

IPC: H01L29/84 ,  H01L21/50

CPC classification number: H01H1/0036 ,  H01H2001/0063 ,  H01H2001/0084 ,  H01H2001/0089

Abstract: A MEM device and method for fabricating a MEM device. A MEM device comprising a lever mechanism residing along a substrate is disclosed. A contact material is deposited on a first surface of the lever mechanism. In one arrangement, the first surface is disposed towards the substrate. A first contact region may be deposited on the substrate. The first contact region attracts the lever mechanism towards the substrate such that the contact material becomes operationally coupled to a second contact region. The MEM device may also comprise a first anchor portion and a second anchor portion. The first and second anchor portions may be integral to a top surface of the substrate. Aspects of the invention are also particularly useful in providing an encapsulated MEM switching device.

Abstract translation: 一种用于制造MEM器件的MEM器件和方法。 公开了一种MEM装置，其包括沿着基板驻留的杠杆机构。 接触材料沉积在杠杆机构的第一表面上。 在一种布置中，第一表面朝向基板设置。 第一接触区域可以沉积在基底上。 第一接触区域将杠杆机构吸引到基板，使得接触材料变得可操作地耦合到第二接触区域。 MEM装置还可以包括第一锚定部分和第二锚定部分。 第一和第二锚定部分可以与衬底的顶表面成一体。 本发明的方面在提供封装的MEM切换装置方面也特别有用。

公开(公告)号：US20060278879A1

公开(公告)日：2006-12-14

申请号：US11149020

申请日：2005-06-09

Applicant: Heinz Busta

Inventor： Heinz Busta

IPC: G03F7/26

CPC classification number: B81C1/00071 ,  B01L3/5027 ,  B01L3/502707 ,  B82Y15/00

Abstract: The invention provides a device comprising a substrate, a first material disposed on the substrate to form a first material layer, a second material disposed on the substrate to form a second material layer, and a nanochannel bounded by the substrate, the first material layer, and the second material layer. The invention further provides a method for manufacturing the aforementioned nanoscale device.

Abstract translation: 本发明提供了一种装置，其包括基板，设置在基板上以形成第一材料层的第一材料，设置在基板上以形成第二材料层的第二材料和由基板界定的纳米通道，第一材料层， 和第二材料层。 本发明还提供一种制造上述纳米级器件的方法。

公开(公告)号：US20050269665A1

公开(公告)日：2005-12-08

申请号：US10861007

申请日：2004-06-04

Applicant: Ian Wylie ,  Heinz Busta ,  David Schroeder ,  J. Steckenrider ,  Yuchun Wang

Inventor： Ian Wylie ,  Heinz Busta ,  David Schroeder ,  J. Steckenrider ,  Yuchun Wang

IPC: H01L21/48 ,  H01L21/768 ,  H01L21/98 ,  H01L23/34 ,  H01L23/473 ,  H01L25/065 ,  H01L29/00 ,  H01L29/06

CPC classification number: H01L23/473 ,  H01L21/4882 ,  H01L21/76898 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A three-dimensional integrated circuit that provides reduced interconnect signal delay over known 2-dimensional systems. The three-dimensional integrated circuit also allows improved circuit cooling. The three-dimensional integrated circuit comprises two or more electrically connected integrated circuits, separated by a cooling channel.

Abstract translation: 一种三维集成电路，可在已知的二维系统上提供缩短的互连信号延迟。 三维集成电路还可以改善电路冷却。 三维集成电路包括由冷却通道隔开的两个或更多个电连接的集成电路。

公开(公告)号：US20050067612A1

公开(公告)日：2005-03-31

申请号：US10675417

申请日：2003-09-30

Applicant: Heinz Busta ,  J. Steckenrider

Inventor： Heinz Busta ,  J. Steckenrider

IPC: H01L29/739 ,  H01L29/88 ,  H01L45/00 ,  H01L29/06

CPC classification number: H01L29/88 ,  H01L29/7391 ,  H01L29/7606 ,  H01L45/00

Abstract: A current-controlling device comprising a first conductor, a second conductor, and a tunneling barrier comprising a first insulating layer between the first conductor and the second conductor. The tunneling barrier electrically isolates the first conductor from the second conductor. At least one mobile charge is positionable within the tunneling barrier. The device also includes a gate, wherein a voltage applied to the gate with respect to the substrate (or with respect to a second gate formed on or in the substrate) modulates or moves the mobile charge to a position between the first conductor and the second conductor within the tunneling barrier, thus deforming the shape of the energy barrier between the first conductor and the second conductor. The deformation can cause a current to flow between the conductors when a voltage is present between them due to quantum mechanical tunneling.

Abstract translation: 一种电流控制装置，包括第一导体，第二导​​体和隧道势垒，其包括在第一导体和第二导体之间的第一绝缘层。 隧道势垒将第一导体与第二导体电隔离。 至少一个移动电荷可定位在隧道屏障内。 该器件还包括栅极，其中相对于衬底（或相对于形成在衬底上或衬底中的第二栅极）施加到栅极的电压将移动电荷调制或移动到第一导体和第二导体之间的位置 导体，从而使第一导体和第二导体之间的能量势垒的形状变形。 由于量子力学隧穿，当它们之间存在电压时，变形可导致导体之间的电流流动。