公开(公告)号：US20050253190A1

公开(公告)日：2005-11-17

申请号：US11101570

申请日：2005-04-08

申请人： Hideki Okumura ,  Mitsuhiko Kitagawa ,  Takuma Hara ,  Takayoshi Ino ,  Kiyotaka Arai ,  Satoshi Taji ,  Masanobu Tsuchitani

发明人： Hideki Okumura ,  Mitsuhiko Kitagawa ,  Takuma Hara ,  Takayoshi Ino ,  Kiyotaka Arai ,  Satoshi Taji ,  Masanobu Tsuchitani

IPC分类号： H01L29/78 ,  H01L27/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/94

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/42368

摘要： A semiconductor device comprises a semiconductor substrate; a semiconductor layer provided on the surface of the semiconductor substrate; a base layer provided on the surface of the semiconductor layer; a source layer provided on the surface of the base layer; a trench formed to pass through the source layer, the base layer, and the semiconductor layer from the surface of the source layer, and reaching the semiconductor substrate; a gate electrode provided from the source layer to at least the semiconductor layer within the trench; and an insulator provided between the gate electrode and the base layer so as to fill in the inside of the trench below the gate electrode, the insulator insulating the gate electrode from the base layer, and generating a potential distribution from the gate electrode toward the semiconductor substrate when a voltage is applied to the gate electrode.

摘要翻译： 半导体器件包括半导体衬底; 设置在所述半导体衬底的表面上的半导体层; 设置在所述半导体层的表面上的基底层; 源层，设置在基层的表面上; 形成为从源极层的表面通过源极层，基极层和半导体层并到达半导体基板的沟槽; 从所述源极层至所述沟槽内的所述半导体层设置的栅电极; 以及设置在所述栅电极和所述基极层之间的绝缘体，以便填充所述栅电极下方的所述沟槽的内部，所述绝缘体将所述栅电极与所述基极层绝缘，并且从所述栅电极向所述半导体产生电势分布 衬底，当电压施加到栅电极时。

公开(公告)号：US06740931B2

公开(公告)日：2004-05-25

申请号：US10417110

申请日：2003-04-17

申请人： Shigeo Kouzuki ,  Hideki Okumura ,  Hitoshi Kobayashi ,  Satoshi Aida ,  Masaru Izumisawa ,  Akihiko Osawa

发明人： Shigeo Kouzuki ,  Hideki Okumura ,  Hitoshi Kobayashi ,  Satoshi Aida ,  Masaru Izumisawa ,  Akihiko Osawa

IPC分类号： H01L2994

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696

摘要： A semiconductor device which comprises a semiconductor substrate, semiconductor pillar regions each having first and second semiconductor pillar portions, the second semiconductor pillar portion being sandwiched by the first semiconductor pillar portions, a base layer formed in the second semiconductor pillar portion, a source diffusion layer formed in the base layer, a gate insulating film formed on a portion of the base layer, a gate electrode formed on the gate insulating film, and isolation regions which isolates the semiconductor pillar regions from each other and are formed in trenches between the semiconductor pillar regions, wherein each of the isolation regions comprises an oxide film formed on an inner surface of the trench and a nitride film formed on the oxide film, the nitride film being filled in the trench, and a film thickness ratio of the oxide film and the nitride film is in a range of 2:1 to 5:1.

公开(公告)号：US07850263B2

公开(公告)日：2010-12-14

申请号：US11755548

申请日：2007-05-30

申请人： Satoshi Shinada ,  Taku Ishizawa ,  Masayoshi Katayama ,  Noboru Asauchi ,  Hideki Okumura

发明人： Satoshi Shinada ,  Taku Ishizawa ,  Masayoshi Katayama ,  Noboru Asauchi ,  Hideki Okumura

IPC分类号： B41J2/195 ,  B41J29/393

CPC分类号： B41J2/17566 ,  B41J2/1753 ,  B41J2/17546 ,  B41J2002/17569 ,  B41J2002/17573 ,  B41J2002/17583

摘要： The invention provides a liquid consumption apparatus including a liquid consumption unit, a counting unit that counts the amount of the liquid consumed by the liquid consumption unit as a liquid consumption amount, a reception unit that receives a detection signal indicating that the amount of the liquid contained in the liquid container is not more than a predetermined amount; a detection-time liquid amount memory unit that memorizes the liquid consumption amount at the time of reception of the detection signal as a detection-time liquid consumption amount, and a judgment unit that judges that the liquid container is empty when the amount of difference between the liquid consumption amount and the detection-time liquid consumption amount is not more than a specified amount.

摘要翻译： 本发明提供了一种液体消耗装置，包括：液体消耗单元;计数单元，其计量由液体消耗单元消耗的液体的量作为液体消耗量;接收单元，其接收指示液体量的检测信号 容纳在液体容器中的量不大于预定量; 检测时间液量存储单元，其将接收到检测信号时的液体消耗量存储为检测时间液体消耗量;以及判断单元，当判断为液体容器为空时， 液体消耗量和检测时间液体消耗量不大于规定量。

公开(公告)号：US20070256300A1

公开(公告)日：2007-11-08

申请号：US11662609

申请日：2005-11-22

申请人： Hideki Okumura ,  Tsuguo Koguchi

发明人： Hideki Okumura ,  Tsuguo Koguchi

IPC分类号： B23P13/00

CPC分类号： F16C9/045 ,  B23C3/30 ,  B23C2215/245 ,  B23C2270/18 ,  B23D45/003 ,  B23D47/12 ,  Y10T29/49288 ,  Y10T409/309576

摘要： A method and a device for machining a cracking groove for a connecting rod, wherein a drive pulley is rotated under the driving action of a rotatingly driving source installed in a body to transmit the rotatingly driving force of the drive pulley to a driven pulley through a drive force transmission belt so as to rotate a groove machining part integrally connected to the driven pulley. In the groove machining part, a spindle integrally connected to the driven pulley is rotatably supported on a support part, and a saw having a plurality of blade parts on the outer peripheral surface thereof is installed on the holding part of the spindle. A first groove of roughly V-shape in cross section is formed in the large end hole of a connecting rod by inserting the metal saw into the large end hole of the connecting rod, and a second groove of roughly V-shape in cross section which is symmetrical with the first groove is formed in the connecting rod at a position opposed to the first groove with respect to the axis of the connecting rod.

摘要翻译： 一种用于加工用于连杆的裂缝槽的方法和装置，其中驱动皮带轮在安装在本体内的旋转驱动源的驱动作用下旋转，以将驱动滑轮的旋转驱动力传递到从动滑轮，通过 驱动力传递带，以使与从动带轮一体连接的槽加工部旋转。 在槽加工部中，与从动带轮一体连接的心轴可旋转地支撑在支撑部上，在其外周面上具有多个叶片部的锯安装在主轴的保持部上。 通过将金属锯插入连杆的大端孔中，在连接杆的大端孔中形成大致V字形的第一槽，并且横截面为大致V形的第二槽 是对称的，第一槽在相对于连杆的轴线与第一槽相对的位置处形成在连杆中。

公开(公告)号：US20050121704A1

公开(公告)日：2005-06-09

申请号：US10983658

申请日：2004-11-09

申请人： Kenichi Tokano ,  Atsuko Yamashita ,  Koichi Takahashi ,  Hideki Okumura ,  Shingo Sato

发明人： Kenichi Tokano ,  Atsuko Yamashita ,  Koichi Takahashi ,  Hideki Okumura ,  Shingo Sato

IPC分类号： H01L21/764 ,  H01L21/265 ,  H01L21/336 ,  H01L21/76 ,  H01L29/06 ,  H01L29/76 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/66712

摘要： Provided is a semiconductor device including a semiconductor substrate which includes a first semiconductor layer of a first conductivity and a pair of second semiconductor layers disposed on the first semiconductor layer and spaced apart from each other to form a trench therebetween, wherein the second semiconductor layer includes a first impurity-diffused region of the first conductivity extending from a lower surface toward an upper surface of the second semiconductor layer, and a second impurity-diffused region of a second conductivity which extends from the lower surface toward the upper surface and is adjacent to the first impurity-diffused region, an insulating layer covering a sidewall of the trench, and a cap layer which is in contact with the semiconductor substrate and covers an opening of the trench to form an enclosed space in the trench, a material of the cap layer being almost the same as that of the semiconductor substrate.

摘要翻译： 提供了一种半导体器件，其包括半导体衬底，该半导体衬底包括第一导电性的第一半导体层和设置在第一半导体层上并且彼此间隔开以在其间形成沟槽的一对第二半导体层，其中第二半导体层包括 从第一半导体层的下表面向上表面延伸的第一导电性的第一杂质扩散区和从下表面向上表面延伸的第二导电性的第二杂质扩散区， 第一杂质扩散区域，覆盖沟槽的侧壁的绝缘层，以及与半导体衬底接触并覆盖沟槽的开口以在沟槽中形成封闭空间的覆盖层，帽的材料 层几乎与半导体衬底的层相同。

公开(公告)号：US20050006699A1

公开(公告)日：2005-01-13

申请号：US10844323

申请日：2004-05-13

申请人： Shingo Sato ,  Atsuko Yamashita ,  Hideki Okumura ,  Kenichi Tokano

发明人： Shingo Sato ,  Atsuko Yamashita ,  Hideki Okumura ,  Kenichi Tokano

IPC分类号： H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L29/76

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66712

摘要： A semiconductor device comprises: a semiconductor layer of a first conductivity type; a first semiconductor pillar layer of the first conductivity type; a second semiconductor pillar layer of a second conductivity type; a third semiconductor pillar layer of the first conductivity type; a forth semiconductor pillar layer of the second conductivity type; a fifth semiconductor pillar layer of the first conductivity type provided on the major surface of the semiconductor layer; a first semiconductor base layer of the second conductivity type provided on the second semiconductor pillar layer; a second semiconductor base layer of the second conductivity type provided on the forth semiconductor pillar layer; first semiconductor region of the first conductivity type selectively provided on a surface of the first semiconductor base layer; second semiconductor region of the first conductivity type selectively provided on a surface of the second semiconductor base layer; gate insulating film provided on the first semiconductor base layer between the first semiconductor region and the first semiconductor pillar layer and between the first semiconductor region and the third semiconductor pillar layer, and provided on the second semiconductor base layer between the second semiconductor region and the third semiconductor pillar layer and between the second semiconductor region and the fifth semiconductor pillar layer; and gate electrode provided on the gate insulating film. Each width of the first through fifth semiconductor pillar layers seen in a perpendicular direction to interfaces of p-n junctions formed among the first through fifth semiconductor pillar layers respectively is 10 microns or less.

摘要翻译： 半导体器件包括：第一导电类型的半导体层; 第一导电类型的第一半导体柱层; 第二导电类型的第二半导体柱层; 第一导电类型的第三半导体柱层; 第二导电类型的第四半导体柱层; 设置在半导体层的主表面上的第一导电类型的第五半导体柱层; 设置在第二半导体柱层上的第二导电类型的第一半导体基底层; 设置在第四半导体柱层上的第二导电类型的第二半导体基底层; 选择性地设置在第一半导体基底层的表面上的第一导电类型的第一半导体区域; 选择性地设置在第二半导体基底层的表面上的第一导电类型的第二半导体区域; 栅极绝缘膜，设置在第一半导体基底层之间的第一半导体区域和第一半导体柱层之间以及第一半导体区域和第三半导体柱层之间，并且设置在第二半导体基底层上的第二半导体区域和第三半导体区域之间 半导体柱层和第二半导体区域和第五半导体柱层之间; 以及设置在栅极绝缘膜上的栅电极。 在与第一至第五半导体柱层之间形成的p-n结的界面的垂直方向上分别看到的第一至第五半导体柱层的宽度分别为10微米以下。

公开(公告)号：US20130069145A1

公开(公告)日：2013-03-21

申请号：US13419396

申请日：2012-03-13

申请人： Takahiro Kawano ,  Hideki Okumura

发明人： Takahiro Kawano ,  Hideki Okumura

IPC分类号： H01L29/78 ,  H01L23/48

CPC分类号： H01L23/48 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/407 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power semiconductor device according to one embodiment includes a first electrode, a semiconductor substrate provided on the first electrode, and an insulating member. A terminal trench is made in the upper surface of the semiconductor substrate in a region including a boundary between a cell region and a terminal region. The semiconductor substrate includes a first portion of a first conductivity type and connected to the first electrode, a second portion of the first conductivity type, a third portion of a second conductivity type provided on the second portion in the cell region and connected to the second electrode, and a fourth portion of the first conductivity type selectively provided on the third portion and connected to the second electrode. The insulating member is disposed between the third portion and the second portion in a direction from the cell region toward the terminal region.

摘要翻译： 根据一个实施例的功率半导体器件包括第一电极，设置在第一电极上的半导体衬底和绝缘构件。 在包括单元区域和端子区域之间的边界的区域中，在半导体衬底的上表面中形成端子沟槽。 半导体衬底包括第一导电类型的第一部分并连接到第一电极，第一导电类型的第二部分，第二导电类型的第三部分，设置在电池区域的第二部分上，并连接到第二导电类型的第二部分 电极，以及选择性地设置在第三部分上并连接到第二电极的第一导电类型的第四部分。 绝缘构件在从单元区域朝向端子区域的方向上配置在第三部分和第二部分之间。

公开(公告)号：US08173509B2

公开(公告)日：2012-05-08

申请号：US12714586

申请日：2010-03-01

申请人： Hideki Okumura ,  Takayoshi Nogami ,  Hiroto Misawa

发明人： Hideki Okumura ,  Takayoshi Nogami ,  Hiroto Misawa

IPC分类号： H01L29/80 ,  H01L31/112

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

摘要： A type semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; a plurality of gate electrodes which are formed in gate trenches via gate insulating films, the gate trenches being formed through the second semiconductor layer and the third semiconductor layer; a plurality of impurity regions of the second conductivity type which are formed at regions below bottoms of contact trenches, the contact trenches being formed at the third semiconductor layer in a thickness direction thereof between corresponding ones of the gate trenches and longitudinal cross sections of the contact trenches being shaped in ellipse, respectively; first electrodes which are formed so as to embed the contact trenches and contacted with the impurity regions, respectively; and a second electrode formed on a rear surface of the semiconductor substrate.

摘要翻译： 一种半导体器件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层; 第一导电类型的第三半导体层; 通过栅极绝缘膜形成在栅极沟槽中的多个栅电极，栅极沟槽通过第二半导体层和第三半导体层形成; 多个第二导电类型的杂质区域形成在接触沟底部下方的区域处，所述接触沟槽在第三半导体层的厚度方向上形成在相应的栅极沟槽和触点的纵向截面之间 沟槽分别成椭圆形; 第一电极被形成为分别嵌入接触沟槽并与杂质区域接触; 以及形成在所述半导体衬底的后表面上的第二电极。

公开(公告)号：US08006878B2

公开(公告)日：2011-08-30

申请号：US11667677

申请日：2005-11-22

申请人： Hideki Okumura ,  Yuukou Hashimoto ,  Tsuguo Koguchi

发明人： Hideki Okumura ,  Yuukou Hashimoto ,  Tsuguo Koguchi

IPC分类号： B26F3/02

CPC分类号： B23D31/003 ,  F16C9/045 ,  Y10T225/12 ,  Y10T225/307 ,  Y10T225/35 ,  Y10T225/371 ,  Y10T225/379

摘要： A splitting devices for a connecting rod, having a fixed stage fixed on a base, a movable stage installed so as to be approachable and departable from the fixed stage, a load mechanism for applying a breaking load to a press fit direction of a wedge member, and second hydraulic cylinders for clamping a cap section by pressing from above an end section of third work support members. The third work support members and the second hydraulic cylinders are individually fixed to the movable stage so as to be displaceable together with the movable stage.

摘要翻译： 一种用于连杆的分离装置，具有固定在基座上的固定台，安装成可接近和离开固定台的可移动台，用于将楔形构件的压配合方向施加断裂载荷的载荷机构 以及第二液压缸，用于通过从第三工作支撑构件的端部上方按压而夹紧盖部。 第三工件支撑构件和第二液压缸单独地固定到可动台，以便与可移动台一起移动。

公开(公告)号：US07391077B2

公开(公告)日：2008-06-24

申请号：US10983658

申请日：2004-11-09

申请人： Kenichi Tokano ,  Atsuko Yamashita ,  Koichi Takahashi ,  Hideki Okumura ,  Shingo Sato

发明人： Kenichi Tokano ,  Atsuko Yamashita ,  Koichi Takahashi ,  Hideki Okumura ,  Shingo Sato

IPC分类号： H01L21/764

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/66712

摘要： Provided is a semiconductor device including a semiconductor substrate which includes a first semiconductor layer of a first conductivity and a pair of second semiconductor layers disposed on the first semiconductor layer and spaced apart from each other to form a trench therebetween, wherein the second semiconductor layer includes a first impurity-diffused region of the first conductivity extending from a lower surface toward an upper surface of the second semiconductor layer, and a second impurity-diffused region of a second conductivity which extends from the lower surface toward the upper surface and is adjacent to the first impurity-diffused region, an insulating layer covering a sidewall of the trench, and a cap layer which is in contact with the semiconductor substrate and covers an opening of the trench to form an enclosed space in the trench, a material of the cap layer being almost the same as that of the semiconductor substrate.

摘要翻译： 提供了一种半导体器件，其包括半导体衬底，该半导体衬底包括第一导电性的第一半导体层和设置在第一半导体层上并且彼此间隔开以在其间形成沟槽的一对第二半导体层，其中第二半导体层包括 从第一半导体层的下表面向上表面延伸的第一导电性的第一杂质扩散区和从下表面向上表面延伸的第二导电性的第二杂质扩散区， 第一杂质扩散区域，覆盖沟槽的侧壁的绝缘层，以及与半导体衬底接触并覆盖沟槽的开口以在沟槽中形成封闭空间的覆盖层，帽的材料 层几乎与半导体衬底的层相同。