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64 条记录 (耗时 0.016 秒)

    Hybrid charge coupled CMOS image sensor
    11.
    发明申请
    Hybrid charge coupled CMOS image sensor 有权
    混合电荷耦合CMOS图像传感器

    公开(公告)号：US20050219884A1

    公开(公告)日：2005-10-06

    申请号：US10816077

    申请日：2004-03-30

    申请人： Sohei Manabe ,  Hidetoshi Nozaki

    发明人： Sohei Manabe ,  Hidetoshi Nozaki

    IPC分类号： H01L27/146 ,  H01L27/148 ,  G11C11/42 ,  G11C7/00

    CPC分类号： H01L27/14609 ,  H01L27/14643

    摘要： An active pixel that incorporates elements of CCD technology into a CMOS image sensor is disclosed. Each pixel includes a reset transistor that resets a sense node. The active pixel includes an amplification transistor that is modulated by the signal on the sense node. A light sensing element, such as a photodiode, is provided and its signal is selectively read out by a transfer gate, selectively stored by a memory gate, and finally read out onto the sense node by a control gate. Underneath the memory gate is a memory well that acts as memory for the pixel and stores the signal output by the light sensing element.

    摘要翻译： 公开了将CCD技术的元件结合到CMOS图像传感器中的有源像素。 每个像素包括复位感测节点的复位晶体管。 有源像素包括由感测节点上的信号调制的放大晶体管。 提供光敏元件，例如光电二极管，其信号由传输门选择性地读出，由存储器门选择性地存储，最后通过控制门读出到感测节点上。 存储器门下方是用作像素的存储器并存储由光感测元件输出的信号的存储器阱。

    High dynamic range sensor with blooming drain
    12.
    发明授权
    High dynamic range sensor with blooming drain 有权
    高动态范围传感器，带有开花排水

    公开(公告)号：US07825966B2

    公开(公告)日：2010-11-02

    申请号：US11872521

    申请日：2007-10-15

    申请人： Sohei Manabe ,  Ashish Shah ,  Sasidhar Saladi ,  William Qian ,  Hidetoshi Nozaki ,  Nagaraja Satyadev ,  Hsin-Chih (Dyson) Tai ,  Howard M. Rhodes

    发明人： Sohei Manabe ,  Ashish Shah ,  Sasidhar Saladi ,  William Qian ,  Hidetoshi Nozaki ,  Nagaraja Satyadev ,  Hsin-Chih (Dyson) Tai ,  Howard M. Rhodes

    IPC分类号： H04N5/335

    CPC分类号： H04N5/3592 ,  H04N5/2355 ,  H04N5/3535 ,  H04N5/35554 ,  H04N5/37457

    摘要： An image sensor has at least two photodiodes in each unit pixel. A high dynamic range is achieved by selecting different exposure times for the photodiodes. Additionally, blooming is reduced. The readout timing cycle is chosen so that the short exposure time photodiodes act as drains for excess charge overflowing from the long exposure time photodiodes. To improve draining of excess charge, the arrangement of photodiodes may be further selected so that long exposure time photodiodes are neighbored along vertical and horizontal directions by short exposure time photodiodes. A micro-lens array may also be provided in which light is preferentially coupled to the long exposure time photodiodes to improve sensitivity.

    摘要翻译： 图像传感器在每个单位像素中具有至少两个光电二极管。 通过为光电二极管选择不同的曝光时间来实现高动态范围。 另外，开花减少。 选择读出定时周期，使得短曝光时间光电二极管充当从长曝光时间光电二极管溢出的过量电荷的漏极。 为了改善过剩电荷的排出，可以进一步选择光电二极管的布置，使得长曝光时间光电二极管通过短曝光时间光电二极管沿垂直和水平方向相邻。 还可以提供微透镜阵列，其中光优先地耦合到长曝光时间光电二极管以提高灵敏度。

    Low voltage active CMOS pixel on an N-type substrate with complete reset
    14.
    发明申请
    Low voltage active CMOS pixel on an N-type substrate with complete reset 有权
    N型衬底上的低电压有源CMOS像素完全复位

    公开(公告)号：US20060157645A1

    公开(公告)日：2006-07-20

    申请号：US11347857

    申请日：2006-02-06

    申请人： Sohei Manabe ,  Hidetoshi Nozaki

    发明人： Sohei Manabe ,  Hidetoshi Nozaki

    IPC分类号： H01L31/00 ,  H01L27/00

    CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H04N5/374

    摘要： A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor with its gate coupled to the output node is provided.

    摘要翻译： 公开了一种在CMOS图像传感器中使用的像素传感器单元。 电池包括形成在P型中的钉扎光电二极管，其形成在N型半导体衬底中。 传输晶体管被放置在钉扎光电二极管和输出节点之间。 复位晶体管耦合在高电压轨V IN和输出节点之间。 最后，提供一个输出晶体管，其栅极耦合到输出节点。

    Active pixel cell using negative to positive voltage swing transfer transistor
    16.
    发明申请
    Active pixel cell using negative to positive voltage swing transfer transistor 有权
    有源像素单元采用负向正摆幅传输晶体管

    公开(公告)号：US20050017155A1

    公开(公告)日：2005-01-27

    申请号：US10625411

    申请日：2003-07-22

    申请人： Sohei Manabe ,  Hidetoshi Nozaki

    发明人： Sohei Manabe ,  Hidetoshi Nozaki

    IPC分类号： H01L27/146 ,  H01L31/00 ,  H01L27/00

    CPC分类号： H01L27/14609 ,  H01L27/14643

    摘要： A active pixel sensor cell is disclosed that comprises a pinned photodiode. A transfer transistor is placed between the pinned photodiode and an output node, the transfer transistor being a depletion mode N-type MOSFET. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor has its gate coupled to the output node.

    摘要翻译： 公开了一种有源像素传感器单元，其包括钉扎光电二极管。 传输晶体管位于钉扎光电二极管和输出节点之间，传输晶体管是耗尽型N型MOSFET。 复位晶体管耦合在高电压轨Vdd和输出节点之间。 最后，输出晶体管的栅极耦合到输出节点。

    CMOS image sensor formed on an N-type substrate
    17.
    发明申请
    CMOS image sensor formed on an N-type substrate 有权
    CMOS图像传感器形成在N型基板上

    公开(公告)号：US20050017245A1

    公开(公告)日：2005-01-27

    申请号：US10772159

    申请日：2004-02-04

    申请人： Sohei Manabe ,  Hidetoshi Nozaki

    发明人： Sohei Manabe ,  Hidetoshi Nozaki

    IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N3/15 ,  H01L29/04

    CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H04N5/374

    摘要： A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor with its gate coupled to the output node is provided.

    摘要翻译： 公开了一种在CMOS图像传感器中使用的像素传感器单元。 电池包括形成在P型中的钉扎光电二极管，其形成在N型半导体衬底中。 传输晶体管被放置在钉扎光电二极管和输出节点之间。 复位晶体管耦合在高电压轨Vdd和输出节点之间。 最后，提供一个输出晶体管，其栅极耦合到输出节点。

    Imaging sensor using asymmetric transfer transistor
    20.
    发明授权
    Imaging sensor using asymmetric transfer transistor 有权
    使用非对称转移晶体管的成像传感器

    公开(公告)号：US07145122B2

    公开(公告)日：2006-12-05

    申请号：US10867020

    申请日：2004-06-14

    申请人： Hidetoshi Nozaki ,  Sohei Manabe

    发明人： Hidetoshi Nozaki ,  Sohei Manabe

    IPC分类号： H01L27/00

    CPC分类号： H01L27/14689 ,  H01L27/14603

    摘要： The present disclosure introduces a simple method for reducing the capacitance of the floating diffusion node of a CMOS image sensor and consequently improving the image sensor's sensitivity. While reducing parasitic capacitances such as the capacitance between the transfer gate and the floating node, the proposed device layouts, in which the channel width of the detection section is different from the channel width of the photoelectric conversion element, demand no more than what is required for the fabrication of the traditional layouts.

    摘要翻译： 本公开引入了用于减小CMOS图像传感器的浮动扩散节点的电容并因此提高图像传感器灵敏度的简单方法。 在降低诸如传输门和浮动节点之间的电容的寄生电容的同时，所提出的器件布局（其中检测部分的沟道宽度与光电转换元件的沟道宽度不同）仅需要所需的 用于制作传统布局。