公开(公告)号：US20090200580A1

公开(公告)日：2009-08-13

申请号：US12028679

申请日：2008-02-08

申请人： Howard E. Rhodes ,  Hidetoshi Nozaki ,  Sohei Manabe

发明人： Howard E. Rhodes ,  Hidetoshi Nozaki ,  Sohei Manabe

IPC分类号： H01L27/148 ,  H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1464 ,  H01L27/14689

摘要： What is disclosed is an apparatus comprising a transfer gate formed on a substrate and a photodiode formed in the substrate next to the transfer gate. The photodiode comprises a shallow N-type collector formed in the substrate, a deep N-type collector formed in the substrate, wherein a lateral side of the deep N-type collector extends at least under the transfer gate, and a connecting N-type collector formed in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. Also disclosed is a process comprising forming a deep N-type collector in the substrate, forming a shallow N-type collector formed in the substrate, and forming a connecting N-type collector in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. A transfer gate is formed on the substrate next to the deep photodiode, wherein a lateral side of the deep N-type collector extends at least under the transfer gate. Other embodiments are disclosed and claimed.

摘要翻译： 所公开的是一种装置，其包括形成在基板上的转移栅极和形成在基板旁边的光电二极管。 光电二极管包括形成在基板中的浅N型集电体，形成在基板中的深N型集电体，其中深N型集电极的侧面至少在传输栅极下延伸，并且连接N型 在深N型集电体和浅N型集电体之间的基板中形成的集电体，其中连接注入物连接深N型集电极和浅N型集电极。 还公开了一种方法，包括在衬底中形成深N型集电体，形成在衬底中形成的浅N型集电体，并且在深N型集电极和浅层之间的衬底中形成连接的N型集电体 N型集电器，其中连接注入件连接深N型集电器和浅N型集电器。 在靠近深度光电二极管的衬底上形成传输栅极，其中深N型集电极的侧面至少在传输栅极下方延伸。 公开和要求保护其他实施例。

公开(公告)号：US20050274874A1

公开(公告)日：2005-12-15

申请号：US10867020

申请日：2004-06-14

申请人： Hidetoshi Nozaki ,  Sohei Manabe

发明人： Hidetoshi Nozaki ,  Sohei Manabe

IPC分类号： H01L27/146 ,  H01L27/00

CPC分类号： H01L27/14689 ,  H01L27/14603

摘要： The present disclosure introduces a simple method for reducing the capacitance of the floating diffusion node of a CMOS image sensor and consequently improving the image sensor's sensitivity. While reducing parasitic capacitances such as the capacitance between the transfer gate and the floating node, the proposed device layouts, in which the channel width of the detection section is different from the channel width of the photoelectric conversion element, demand no more than what is required for the fabrication of the traditional layouts.

摘要翻译： 本公开引入了用于减小CMOS图像传感器的浮动扩散节点的电容并因此提高图像传感器灵敏度的简单方法。 在降低诸如传输门和浮动节点之间的电容的寄生电容的同时，所提出的器件布局（其中检测部分的沟道宽度与光电转换元件的沟道宽度不同）仅需要所需的 用于制作传统布局。

公开(公告)号：US08228411B2

公开(公告)日：2012-07-24

申请号：US13327592

申请日：2011-12-15

申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.

摘要翻译： 背面照明（BSI）像素阵列的操作方法包括用BSI像素阵列内的第一像素的第一感光区域获取图像信号。 响应于入射在第一像素的背面的光产生图像信号。 由第一感光区域获取的图像信号被传送到设置在与背面相对的第一像素的前侧上的第一像素的像素电路。 像素电路至少部分地与第一像素的第一光敏区域重叠，并且延伸超过与第一像素相邻的第二像素的第二光敏区域上方的裸片空间，使得第二像素将第二像素未使用的裸片空间提供给 第一像素以适应比装配在第一像素内的更大的像素电路。

公开(公告)号：US20120086844A1

公开(公告)日：2012-04-12

申请号：US13327592

申请日：2011-12-15

申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H04N5/335

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.

摘要翻译： 背面照明（BSI）像素阵列的操作方法包括用BSI像素阵列内的第一像素的第一感光区域获取图像信号。 响应于入射在第一像素的背面的光产生图像信号。 由第一感光区域获取的图像信号被传送到设置在与背面相对的第一像素的前侧上的第一像素的像素电路。 像素电路至少部分地与第一像素的第一光敏区域重叠，并且延伸超过与第一像素相邻的第二像素的第二光敏区域上方的裸片空间，使得第二像素将第二像素未使用的裸片空间提供给 第一像素以适应比装配在第一像素内的更大的像素电路。

公开(公告)号：US20090200624A1

公开(公告)日：2009-08-13

申请号：US12053476

申请日：2008-03-21

申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.

摘要翻译： 背面照明（“BSI”）成像传感器像素包括光电二极管区域和像素电路。 光电二极管区域设置在半导体管芯内，用于响应于入射到BSI成像传感器像素的背面的光积累图像电荷。 像素电路包括设置在半导体管芯内的半导体管芯的前侧和光电二极管区域之间的晶体管像素电路。 像素电路的至少一部分与光电二极管区域重叠。

公开(公告)号：US20090002528A1

公开(公告)日：2009-01-01

申请号：US11872521

申请日：2007-10-15

申请人： Sohei Manabe ,  Ashish Shah ,  Sasidhar Saladi ,  William Qian ,  Hidetoshi Nozaki ,  Nagaraja Satyadev ,  Hsin-Chih Dyson Tai ,  Howard M. Rhodes

发明人： Sohei Manabe ,  Ashish Shah ,  Sasidhar Saladi ,  William Qian ,  Hidetoshi Nozaki ,  Nagaraja Satyadev ,  Hsin-Chih Dyson Tai ,  Howard M. Rhodes

IPC分类号： H04N5/335 ,  H04N9/64 ,  H04N3/14

CPC分类号： H04N5/3592 ,  H04N5/2355 ,  H04N5/3535 ,  H04N5/35554 ,  H04N5/37457

摘要： An image sensor has at least two photodiodes in each unit pixel. A high dynamic range is achieved by selecting different exposure times for the photodiodes. Additionally, blooming is reduced. The readout timing cycle is chosen so that the short exposure time photodiodes act as drains for excess charge overflowing from the long exposure time photodiodes. To improve draining of excess charge, the arrangement of photodiodes may be further selected so that long exposure time photodiodes are neighbored along vertical and horizontal directions by short exposure time photodiodes. A micro-lens array may also be provided in which light is preferentially coupled to the long exposure time photodiodes to improve sensitivity.

摘要翻译： 图像传感器在每个单位像素中具有至少两个光电二极管。 通过为光电二极管选择不同的曝光时间来实现高动态范围。 另外，开花减少。 选择读出定时周期，使得短曝光时间光电二极管充当从长曝光时间光电二极管溢出的过量电荷的漏极。 为了改善过剩电荷的排出，可以进一步选择光电二极管的布置，使得长曝光时间光电二极管通过短曝光时间光电二极管沿垂直和水平方向相邻。 还可以提供微透镜阵列，其中光优先地耦合到长曝光时间光电二极管以提高灵敏度。

公开(公告)号：US20070018264A1

公开(公告)日：2007-01-25

申请号：US11210996

申请日：2005-08-24

申请人： Howard Rhodes ,  Hidetoshi Nozaki ,  Sohei Manabe ,  Hsin-chih Tai ,  Satyadev Nagaraja ,  Ashish Shah ,  William Qian ,  Hongli Yang ,  Tiejun Dai

发明人： Howard Rhodes ,  Hidetoshi Nozaki ,  Sohei Manabe ,  Hsin-chih Tai ,  Satyadev Nagaraja ,  Ashish Shah ,  William Qian ,  Hongli Yang ,  Tiejun Dai

IPC分类号： H01L31/0232

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14654

摘要： An image sensor that has a pixel array using an isolation structure between pixels that reduce electrical cross-talk is disclosed. The pixel array is formed on a substrate that has a thin (less than 5 microns) epitaxial layer. The isolation structure uses a deep p-well to surround a shallow trench isolation. The deep p-well is formed using an implant energy of typically over 700 keV.

摘要翻译： 公开了一种使用减少电串扰的像素之间的隔离结构的像素阵列的图像传感器。 像素阵列形成在具有薄（小于5微米）外延层的衬底上。 隔离结构使用深p阱来围绕浅沟槽隔离。 使用典型地超过700keV的注入能量形成深p阱。

公开(公告)号：US07161130B2

公开(公告)日：2007-01-09

申请号：US11347857

申请日：2006-02-06

申请人： Sohei Manabe ,  Hidetoshi Nozaki

发明人： Sohei Manabe ,  Hidetoshi Nozaki

IPC分类号： H01L27/00

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H04N5/374

摘要： A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor with its gate coupled to the output node is provided.

摘要翻译： 公开了一种在CMOS图像传感器中使用的像素传感器单元。 电池包括形成在P型中的钉扎光电二极管，其形成在N型半导体衬底中。 传输晶体管被放置在钉扎光电二极管和输出节点之间。 复位晶体管耦合在高电压轨V IN和输出节点之间。 最后，提供一个输出晶体管，其栅极耦合到输出节点。

公开(公告)号：US07045754B2

公开(公告)日：2006-05-16

申请号：US10816077

申请日：2004-03-30

申请人： Sohei Manabe ,  Hidetoshi Nozaki

发明人： Sohei Manabe ,  Hidetoshi Nozaki

IPC分类号： H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： An active pixel that incorporates elements of CCD technology into a CMOS image sensor is disclosed. Each pixel includes a reset transistor that resets a sense node. The active pixel includes an amplification transistor that is modulated by the signal on the sense node. A light sensing element, such as a photodiode, is provided and its signal is selectively read out by a transfer gate, selectively stored by a memory gate, and finally read out onto the sense node by a control gate. Underneath the memory gate is a memory well that acts as memory for the pixel and stores the signal output by the light sensing element.

摘要翻译： 公开了将CCD技术的元件结合到CMOS图像传感器中的有源像素。 每个像素包括复位感测节点的复位晶体管。 有源像素包括由感测节点上的信号调制的放大晶体管。 提供光敏元件，例如光电二极管，其信号由传输门选择性地读出，由存储器门选择性地存储，最后通过控制门读出到感测节点上。 存储器门下方是用作像素的存储器并存储由光感测元件输出的信号的存储器阱。

公开(公告)号：US06974943B2

公开(公告)日：2005-12-13

申请号：US10625411

申请日：2003-07-22

申请人： Sohei Manabe ,  Hidetoshi Nozaki

发明人： Sohei Manabe ,  Hidetoshi Nozaki

IPC分类号： H01L27/146 ,  H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： A active pixel sensor cell is disclosed that comprises a pinned photodiode. A transfer transistor is placed between the pinned photodiode and an output node, the transfer transistor being a depletion mode N-type MOSFET. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor has its gate coupled to the output node.

摘要翻译： 公开了一种有源像素传感器单元，其包括钉扎光电二极管。 传输晶体管位于钉扎光电二极管和输出节点之间，传输晶体管是耗尽型N型MOSFET。 复位晶体管耦合在高电压轨V IN和输出节点之间。 最后，输出晶体管的栅极耦合到输出节点。