公开(公告)号：US07495776B2

公开(公告)日：2009-02-24

申请号：US11268948

申请日：2005-11-08

申请人： Akira Kubo ,  Shinichi Horita ,  Yoshihisa Abe

发明人： Akira Kubo ,  Shinichi Horita ,  Yoshihisa Abe

IPC分类号： G01B11/24 ,  G06T15/30

CPC分类号： G01B21/04

摘要： A three-dimensional measuring system for measuring a three-dimensional shape of a measurement object in a noncontact manner includes a first obtaining portion for obtaining arrangement information of the measurement object, a second obtaining portion for obtaining design shape information of the measurement object, a fourth obtaining portion for obtaining specifics information about one or more three-dimensional measuring devices, a determining portion for determining a measurable part that can be measured by the three-dimensional measuring device about a surface shape of the measurement object in accordance with the obtained arrangement information, the obtained design shape information and the obtained specifics information, and an output portion for outputting the determined measurable part.

摘要翻译： 一种用于以非接触方式测量测量对象的三维形状的三维测量系统包括用于获得测量对象的布置信息的第一获取部分，用于获得测量对象的设计形状信息的第二获取部分， 第四获取部分，用于获得关于一个或多个三维测量装置的细节信息;确定部分，用于根据获得的布置来确定可以由三维测量装置测量的关于测量对象的表面形状的可测量部分 信息，所获得的设计形状信息和获得的细节信息，以及用于输出所确定的可测量部分的输出部分。

公开(公告)号：US20070296979A1

公开(公告)日：2007-12-27

申请号：US11820972

申请日：2007-06-21

申请人： Koji Morimoto ,  Yoshihisa Abe ,  Shinichi Horita

发明人： Koji Morimoto ,  Yoshihisa Abe ,  Shinichi Horita

IPC分类号： G01B11/24 ,  G01B11/30

CPC分类号： G01B11/2545

摘要： A three-dimensional shape measuring apparatus includes a measuring section and a data integrating section. The measuring section has three-dimensional measurement dimensions, and measures a three-dimensional shape of a measurement object in a non-contact state. The measuring section measures a three-dimensional shape of a part of the measurement object multiple times by shifting the measurement dimensions to obtain multiple measurement data. The measurement dimensions are shifted in such a manner that at least portions of consecutive measurement dimensions by the shifting are lapped one over the other. The data integrating section integrates the multiple measurement data to obtain the three-dimensional shape of the measurement object. The data integrating section executes the data integration, using reliability information attributed to the respective measurement data.

摘要翻译： 三维形状测量装置包括测量部分和数据积分部分。 测量部具有三维测量尺寸，并且测量非接触状态下的测量对象的三维形状。 测量部通过移动测量尺寸来测量测量对象的一部分的三维形状以获得多个测量数据。 测量尺寸以这样的方式移动，使得通过移位的连续测量尺寸的至少一部分彼此重叠。 数据积分部分集成了多个测量数据，以获得测量对象的三维形状。 数据积分部使用归属于各测量数据的可靠性信息来执行数据积分。

公开(公告)号：US20070285672A1

公开(公告)日：2007-12-13

申请号：US11810939

申请日：2007-06-07

申请人： Takayuki Mukai ,  Yoshihisa Abe

发明人： Takayuki Mukai ,  Yoshihisa Abe

IPC分类号： G01B11/24 ,  G01B11/30

CPC分类号： G01B11/2518

摘要： An operation of projecting slit light onto an object to be measured and receiving light reflected thereon, and an operation of acquiring a two-dimensional image concerning the object to be measured are repeated a certain number of times by changing a focal length. An imaging contrast is calculated with respect to each of areas on the two-dimensional images acquired at the different focal lengths. A high contrast area where the imaging contrast exceeds a predetermined threshold value is extracted with respect to each of the two-dimensional images acquired at the different focal lengths. Distance information concerning the respective areas is acquired by performing triangulation with respect to each of the high contrast areas. Position adjustment of measurement dimensions is performed in such a manner that the areas are included in the measurement dimensions having the predetermined measurement depth, based on the distance information.

摘要翻译： 通过改变焦距来重复将狭缝光投射到被测量物体上并且接收其上反射的光的操作以及获取关于被测量物体的二维图像的操作一定次数的操作。 对于以不同焦距获取的二维图像上的每个区域计算成像对比度。 相对于以不同焦距获取的每个二维图像，提取成像对比度超过预定阈值的高对比度区域。 通过相对于每个高对比度区域进行三角测量来获取关于各个区域的距离信息。 基于距离信息，以这样的方式进行测量尺寸的位置调整，使得区域被包括在具有预定测量深度的测量尺寸中。

公开(公告)号：US20060269123A1

公开(公告)日：2006-11-30

申请号：US11434310

申请日：2006-05-15

申请人： Shinichi Horita ,  Yoshihisa Abe

发明人： Shinichi Horita ,  Yoshihisa Abe

IPC分类号： G06K9/00

CPC分类号： G06T7/579 ,  G06T2200/08

摘要： A three-dimensional measurement method is provided for measuring an object shape in a non-contact manner by using a non-contact sensor and a sensor moving mechanism that changes a position and a posture of the sensor and can operate by numerical control, moving the non-contact sensor in accordance with measurement path information indicating plural positions and postures of the sensor at the respective positions. The measurement path information is set in advance by teaching. The method includes performing preliminary three-dimensional measurement of the object in accordance with preliminary measurement path information, using shape data obtained by the preliminary three-dimensional measurement and shape data of an imaginary object as a measurement target in the teaching to detect positioning error between the object and the imaginary object, modifying the measurement path information depending on the detected positioning error, and performing three-dimensional measurement of the object in accordance with the modified measurement path information.

摘要翻译： 提供一种三维测量方法，用于通过使用改变传感器的位置和姿势并且可以通过数字控制操作的非接触传感器和传感器移动机构以非接触的方式测量物体形状， 根据测量路径信息指示传感器在各个位置处的多个位置和姿势的非接触式传感器。 通过教学预先设定测量路径信息。 该方法包括根据初步测量路径信息，使用通过初步三维测量获得的形状数据和虚拟对象的形状数据作为测量对象来执行对象的初步三维测量，以检测教学中的定位误差 物体和虚拟物体，根据检测出的定位误差来修正测量路径信息，并根据修改的测量路径信息进行物体的三维测量。

公开(公告)号：US06936490B2

公开(公告)日：2005-08-30

申请号：US10432597

申请日：2002-09-05

申请人： Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi ,  Kazutaka Terashima ,  Jun Komiyama

发明人： Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi ,  Kazutaka Terashima ,  Jun Komiyama

IPC分类号： C30B25/02 ,  H01L21/04 ,  H01L21/00

CPC分类号： C30B25/02 ,  C30B29/36 ,  C30B29/406 ,  H01L21/0445

摘要： A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a thickness of 5 nm or more and 100 nm or less on the Si substrate; (b) further supplying a raw material gas containing a gas having P element and a gas having B element on the Si substrate, and thereby synthesizing a cubic boron phosphide single crystal film having a thickness of 5 nm or more and 1000 nm or less on the Si substrate; and (c) supplying a gas having carbon element and a gas having silicon element on the Si substrate thereon the BP single crystal film is formed, and thereby synthesizing a beta-SiC single crystal film or an amorphous SiC film having a thickness of 1 nm or more and several hundreds nanometers or less on the cubic boron phosphide single crystal film on the Si substrate.

摘要翻译： 一种在Si衬底上外延生长SiC膜的方法，包括：（a）在Si衬底上提供含有P（磷）元素的气体和具有B（硼）元素的气体的原料气体，从而合成 在Si衬底上具有5nm以上且100nm以下的厚度的无定形BP薄膜; （b）在Si衬底上进一步供给包含具有P元素的气体和具有B元素的气体的原料气体，由此合成厚度为5nm以上且1000nm以下的立方晶磷化硼单晶膜， Si衬底; 和（c）在Si衬底上提供具有碳元素的气体和具有硅元素的气体，形成BP单晶膜，从而合成厚度为1nm的β-SiC单晶膜或非晶SiC膜 或更多和几百纳米或更少的Si基板上的立方硼化磷单晶膜。

公开(公告)号：US08986466B2

公开(公告)日：2015-03-24

申请号：US13322936

申请日：2010-05-25

申请人： Yoshihisa Abe ,  Masanari Watanabe ,  Osamu Tamura

发明人： Yoshihisa Abe ,  Masanari Watanabe ,  Osamu Tamura

IPC分类号： C23C8/22 ,  C21D9/00 ,  C23C8/64

CPC分类号： C23C8/64

摘要： Provided is a method for carburizing a tantalum member whereby the tantalum member is less deformed by carburization and can be carburized with good flatness of the planar part thereof and in a uniform manner. The method is a method for subjecting a tantalum member 1 made of tantalum or a tantalum alloy and having a planar part 1a to a carburization process for allowing carbon to penetrate the member 1 from the surface toward the inner portion thereof and includes the steps of: setting the tantalum member 1 in a chamber 3 containing a carbon source by supporting the planar part 1a on a plurality of support rods 6 tapered at distal ends 6a thereof; and subjecting the tantalum member 1 to a carburization process by reducing in pressure and heating the interior of the chamber 3 to allow carbon derived from the carbon source to penetrate the tantalum member 1 from the surface thereof.

摘要翻译： 提供了一种钽构件的渗碳方法，由此钽构件通过渗碳而变形较小，并且可以以均匀的方式使其平面部分具有良好的平坦度渗碳。 该方法是使由钽或钽合金制成的具有平面部分1a的钽构件1经受渗碳处理以使碳从表面向内部渗入构件1的方法包括以下步骤： 将钽构件1设置在容纳碳源的室3中，通过将平面部1a支撑在多个在其远端6a处成锥形的支撑杆6上; 并且通过降低压力并对室3的内部进行加热，使钽构件1进行渗碳处理，以使来自碳源的碳从其表面渗入钽构件1。

公开(公告)号：US20130240090A1

公开(公告)日：2013-09-19

申请号：US13990078

申请日：2011-07-06

申请人： Masanari Watanabe ,  Yoshihisa Abe

发明人： Masanari Watanabe ,  Yoshihisa Abe

IPC分类号： C23C8/64

CPC分类号： C23C8/64

摘要： Provided is a method for carburizing a tantalum container which can easily control the carburization thicknesses of various portions of the tantalum container and carburize the tantalum container with a uniform thickness. A method for carburizing a tantalum container 1 made of tantalum or a tantalum alloy to allow carbon to penetrate the tantalum container 1 includes the steps of: supporting the tantalum container 1 on a support member 5, 6 provided in a chamber 3 and setting the tantalum container 1 in the chamber 3; and reducing the pressure inside the chamber 3 and heating the interior of the chamber 3, wherein a carbon source is placed in the vicinity of a portion of the tantalum container 1 hard to carburize.

摘要翻译： 本发明提供一种能够容易地控制钽容器的各部分的渗碳厚度并以均匀厚度渗碳钽容器的钽容器渗碳的方法。 将由钽或钽合金制成的钽容器1渗碳以使碳贯穿钽容器1的方法包括以下步骤：将钽容器1支撑在设置在腔室3中的支撑构件5,6上，并将钽 容器1在腔室3中; 并且减小室3内的压力并加热室3的内部，其中将碳源放置在钽容器1的一部分附近难以渗碳。

公开(公告)号：US20100244100A1

公开(公告)日：2010-09-30

申请号：US12659927

申请日：2010-03-25

申请人： Hiroshi Oishi ,  Jun Komiyama ,  Kenichi Eriguchi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

发明人： Hiroshi Oishi ,  Jun Komiyama ,  Kenichi Eriguchi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

IPC分类号： H01L29/20

CPC分类号： C30B29/403 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/183 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7787

摘要： The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0

摘要翻译： 本发明提供了一种化合物半导体衬底，包括：具有（111）取向的晶面的单晶硅衬底; 第一缓冲层，其形成在单晶硅衬底上并由Al x Ga 1-x N单晶（0

公开(公告)号：US07643159B2

公开(公告)日：2010-01-05

申请号：US11879686

申请日：2007-07-18

申请人： Shinji Yamamoto ,  Yoshihisa Abe

发明人： Shinji Yamamoto ,  Yoshihisa Abe

IPC分类号： G01B11/24

CPC分类号： G01B11/2527 ,  G06T7/521

摘要： A three-dimensional shape measuring system includes: a light projecting/receiving apparatus which causes a light receiver to receive light reflected on a surface of a measurement object onto a light receiving surface thereof at a predetermined cycle multiple times, while changing a projecting direction of the light; and a measuring apparatus for measuring a three-dimensional shape of the measurement object, utilizing light receiving data. The measuring apparatus includes: a light receiving time setter for setting a light receiving time in each cycle with respect to each of light receiving areas constituting the light receiving surface; a data converter for converting an output value representing the light receiving data obtained in each cycle into an output value standardized with respect to the light receiving time in each cycle, if the light receiving times are different in the cycles; a projection timing acquirer for acquiring a projection timing at which the light receiving amount of each light receiving area is maximum; and a position acquirer for acquiring a position of a measurement point on the surface of the measurement object corresponding to each light receiving area.

摘要翻译： 三维形状测量系统包括：光投射/接收装置，其使得光接收器以预定周期多次将测量对象的表面上反射的光接收到其受光面上，同时改变投影方向 光; 以及利用光接收数据测量测量对象的三维形状的测量装置。 测量装置包括：光接收时间设定器，用于相对于构成光接收表面的每个光接收区域设定每个周期中的光接收时间; 数据转换器，用于将每个周期中获得的光接收数据的输出值转换为相对于每个周期中的光接收时间标准化的输出值，如果光接收时间在周期不同; 投影定时获取器，用于获取每个光接收区域的光接收量最大的投影定时; 以及位置获取器，用于获取与每个光接收区域对应的测量对象表面上的测量点的位置。

公开(公告)号：US07592298B2

公开(公告)日：2009-09-22

申请号：US11571654

申请日：2005-07-01

申请人： Nobuyuki Takeuchi ,  Yoshihisa Abe

发明人： Nobuyuki Takeuchi ,  Yoshihisa Abe

IPC分类号： C11D3/18 ,  C11D3/20 ,  A61K8/33 ,  A61K8/37

CPC分类号： A61Q1/14 ,  A61K8/37 ,  A61K8/375 ,  A61K8/39 ,  A61Q19/10 ,  C11D1/667 ,  C11D3/2093

摘要： This invention provides an oil-based liquid cleansing preparation that does not sag from the hands during use, can easily be applied to a contemplated site, i.e. has excellent usability, exhibits excellent spreadability during cleansing, gives excellent feeling on use which can realize suitable thickness felling, is usable under an environment where the hands and face are in a wetted state, such as a bathroom and a washstand, has a high level of detergency, and is free from residual oil touch after water washing. This composition comprises an ester of a fatty acid with polyglycerin, glycerin esters of a monocarboxylic acid and a dicarboxylic acid, and a monocarboxylic fatty acid ester which is liquid at 25° C. and has a viscosity of 300 to 3000 mPa·s.

摘要翻译： 本发明提供一种油性液体清洗剂，其在使用中不会从手中下垂，可以容易地应用于预想的部位，即具有优异的使用性，在清洁过程中展现出优异的铺展性，使得可以实现合适的厚度 可以在手和脸部处于湿润状态的环境（例如浴室和盥洗台）中使用，具有高水平的去污力，并且在水洗后没有残留的油接触。 该组合物包含脂肪酸与聚甘油的酯，一元羧酸的甘油酯和二羧酸，以及在25℃下为液体，粘度为300〜3000mPa·s的单羧酸脂肪酸酯。