摘要:
A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a thickness of 5 nm or more and 100 nm or less on the Si substrate; (b) further supplying a raw material gas containing a gas having P element and a gas having B element on the Si substrate, and thereby synthesizing a cubic boron phosphide single crystal film having a thickness of 5 nm or more and 1000 nm or less on the Si substrate; and (c) supplying a gas having carbon element and a gas having silicon element on the Si substrate thereon the BP single crystal film is formed, and thereby synthesizing a beta-SiC single crystal film or an amorphous SiC film having a thickness of 1 nm or more and several hundreds nanometers or less on the cubic boron phosphide single crystal film on the Si substrate.
摘要:
A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer 4 (0≦w
摘要翻译:背面电极6形成在化合物半导体的Si单晶衬底2的背面,其中厚度为0.05-2μm的n型3C-SiC单晶缓冲层3,载流子浓度为10 16×10 21 / cm 3,六方晶系Al x 厚度为0.01-0.5μm的1-wx N单晶缓冲层4(0 <= w <1,0 <= x <1,w + x <1)和n型六方晶系 在Al 3 O 3中,单晶层5(0 <= y <1,0 3 <! - SIPO - >面,并且在六方晶系的表面上形成表面电极7, 单晶层5,以提供化合物s 导致少量能量损失并且允许高效率和高击穿电压的半导体器件。
摘要:
A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin film 6 etc. with a large size and a very high quality.
摘要:
To provide a nitride semiconductor single crystal substrate comprising a Si substrate and a nitride semiconductor film which has semi-polar (10-1m) plane (m: natural number) and a thickness of 1 μm or more, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, this invention provides a nitride semiconductor single crystal substrate comprising a Si substrate having an off-cut angle of 1 to 35° in the direction from the direction, a buffer layer 2a (2b) made of at least one of SiC or BP formed on the Si substrate, a AlN buffer layer formed on the buffer layers, and a nitride semiconductor single crystal film formed on the AlN buffer layer, the nitride semiconductor single crystal film comprising any one of GaN (10-1m), AlN (10-1m), InN (10-1m) or a GaN (10-1m)/and AlN (10-1m) superlattice film.
摘要:
The present invention provides a nitride semiconductor single crystal including gallium nitride (GaN) or aluminum nitride (AlN) which are formed as a film to have good crystallinity without forming a 3C—SiC layer on a Si substrate, and which can be used suitably for a light emitting diode, a laser light emitting element, an electronic element that can be operated at a high speed and a high temperature, etc., as well as a high frequency device.A GaN (0001) or AlN (0001) single crystal film, or a super-lattice structure of GaN (0001) and AlN (0001) is formed on a Si (110) substrate via a 2H—AlN buffer layer.
摘要:
A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer 4 (0≦w
摘要翻译:背面电极6形成在化合物半导体的Si单晶衬底2的背面,其中厚度为0.05-2μm的n型3C-SiC单晶缓冲层3,载流子浓度为10 16×10 21 / cm 3,六方晶系Al x 厚度为0.01-0.5μm的1-wx N单晶缓冲层4(0 <= w <1,0 <= x <1,w + x <1)和n型六方晶系 在Al 3 O 3中,单晶层5(0 <= y <1,0 3 <! - SIPO - >,并且在六方晶系AlGaN / N单晶层5,以提供化合物 导致很少的能量损失并且允许高效率和高的击穿电压的半导体器件。
摘要:
A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin film 6 etc. with a large size and a very high quality.
摘要:
A substrate for compound semiconductor device and a compound semiconductor device using the substrate are provided which allow a breakdown voltage to be high, cause little energy loss, and are suitably used for a high-electron mobility transistor etc. An n-type 3C—SiC single crystal buffer layer 3 having a carrier concentration of 1016-1021/cm3, a hexagonal GaxAl1-xN single crystal buffer layer (0≦x
摘要翻译:提供了一种化合物半导体器件的基板和使用该基板的化合物半导体器件,其允许击穿电压高,导致很少的能量损失,并且适合用于高电子迁移率晶体管等。n型3C-SiC 载流子浓度为10-16 / 21/3/3的单晶缓冲层3,六方晶系 > 1×1×N单晶缓冲层(0 <= x <1)4,n型六方晶系Al 1-y < 载流子浓度为10〜10/10/10/10以上的SUB> N单晶层(0.2 <= y <= 1)5 ,和n型六方晶系Al 1-z N单晶载体供给层(0≤z≤0.8,0.2≤yz≤1) )6具有载流子浓度为10 11 -10 16 / cm 3的物质依次层叠在n型Si单晶衬底2上 具有晶面取向{111}和载体浓度为10 16 -10 21 SUP> / cm 3。 在上述基板2的背面形成有背面电极7,在上述载体供给层6的表面上形成有表面电极8。
摘要:
A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).
摘要翻译:提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法,其允许更高的阈值电压和电流崩溃的改善。 在具有衬底1的氮化物半导体衬底10中,形成在衬底1的一个主平面上的缓冲层2,形成在缓冲层2上的中间层3,形成在中间层3上的电子传输层4和 形成在电子输送层4上的电子供给层5,中间层3的厚度为200nm〜1500nm,碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3,为AlxGa1-xN( 0.05&nlE; x&lt; L; 0.24),电子传输层4的厚度为5nm〜200nm,为Al y Ga 1-y N(0&nl E; y&nlE; 0.04)。
摘要:
In a substrate for growth of a chemical compound semiconductor, at least on one surface of a Si single crystal substrate 2 with a thickness of 300 μm, a porous Si single crystal 4 is formed. Pores of the porous Si single crystal 4 is opened outward. The surface of the porous Si single crystal 4 is covered by a 3C—SiC single crystal layer 3 with a thickness of 1 nm. The thickness of the porous Si single crystal 4 is, for example, 10 μm.