公开(公告)号：US07943905B2

公开(公告)日：2011-05-17

申请号：US12709759

申请日：2010-02-22

申请人： Hiroto Honda ,  Hideyuki Funaki

发明人： Hiroto Honda ,  Hideyuki Funaki

IPC分类号： H01L25/00

CPC分类号： H01L27/14623 ,  H01L27/14649 ,  H01L27/14669

摘要： An infrared solid-state image sensor comprises: a pixel area comprising a sensitive pixel area where infrared detection pixels are arranged in a matrix form to detect incident infrared rays on the semiconductor substrate and a reference pixel area where reference pixels are provided, each of the infrared detection pixels comprising a thermoelectric conversion part, the thermoelectric conversion part comprising an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a first thermoelectric conversion element to convert the heat obtained by the conversion in the infrared absorption film to a electric signal, each of the reference pixels comprising a second thermoelectric conversion element. Each of first ends of the reference pixels are connected to a reference potential line, and a difference between the signal potential read out from a corresponding signal line and a reference potential supplied from the reference potential line is amplified and outputted.

摘要翻译： 一种红外固态图像传感器包括：像素区域，包括敏感像素区域，其中红外检测像素以矩阵形式布置以检测半导体衬底上的入射红外线和参考像素的参考像素区域， 红外线检测像素包括热电转换部分，该热电转换部分包括用于吸收入射的红外线并将入射的红外线转换成热的红外线吸收膜和第一热电转换元件，以将通过红外吸收中的转换获得的热量转换 每个参考像素包括第二热电转换元件。 参考像素的每个第一端连接到参考电位线，并且从相应的信号线读出的信号电位与从参考电位线提供的参考电位之间的差放大并输出。

公开(公告)号：US20130248714A1

公开(公告)日：2013-09-26

申请号：US13728009

申请日：2012-12-27

申请人： Hiroto Honda ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Masaki Atsuta ,  Keita Sasaki ,  Koichi Ishii ,  Honam Kwon

发明人： Hiroto Honda ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Masaki Atsuta ,  Keita Sasaki ,  Koichi Ishii ,  Honam Kwon

IPC分类号： H01L27/146 ,  G01J5/20

CPC分类号： G01J5/12 ,  G01J5/023 ,  G01J5/20 ,  G01J5/22 ,  G01J2005/0077 ,  H01L27/14649 ,  H04N5/33

摘要： An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.

摘要翻译： 根据实施例的非冷却红外成像装置包括：形成在半导体衬底上并布置在至少一行中的参考像素; 以及布置在其余行中的红外检测像素，并检测入射的红外线。 每个参考像素包括位于第一凹部上方的第一单元。 第一电池包括具有第一红外线吸收膜的第一热电转换单元; 和第一热电转换元件。 每个红外检测像素包括位于第二凹部上方的第二单元，并且具有比第一单元更大的面积。 第二单元包括：位于第二凹部上方的第二热电转换单元; 以及第一和第二支撑结构单元，其在第二凹部上方支撑第二热电转换单元。 第二热电转换单元包括：第二红外线吸收膜; 和第二热电转换元件。

公开(公告)号：US20100230594A1

公开(公告)日：2010-09-16

申请号：US12709759

申请日：2010-02-22

申请人： Hiroto Honda ,  Hideyuki Funaki

发明人： Hiroto Honda ,  Hideyuki Funaki

IPC分类号： H01L27/146

CPC分类号： H01L27/14623 ,  H01L27/14649 ,  H01L27/14669

摘要： An infrared solid-state image sensor comprises: a pixel area comprising a sensitive pixel area where infrared detection pixels are arranged in a matrix form to detect incident infrared rays on the semiconductor substrate and a reference pixel area where reference pixels are provided, each of the infrared detection pixels comprising a thermoelectric conversion part, the thermoelectric conversion part comprising an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a first thermoelectric conversion element to convert the heat obtained by the conversion in the infrared absorption film to a electric signal, each of the reference pixels comprising a second thermoelectric conversion element. Each of first ends of the reference pixels are connected to a reference potential line, and a difference between the signal potential read out from a corresponding signal line and a reference potential supplied from the reference potential line is amplified and outputted.

摘要翻译： 一种红外固态图像传感器包括：像素区域，包括敏感像素区域，其中红外检测像素以矩阵形式布置以检测半导体衬底上的入射红外线和参考像素的参考像素区域， 红外线检测像素包括热电转换部分，该热电转换部分包括用于吸收入射的红外线并将入射的红外线转换成热的红外线吸收膜和第一热电转换元件，以将通过红外吸收中的转换获得的热量转换 每个参考像素包括第二热电转换元件。 参考像素的每个第一端连接到参考电位线，并且从相应的信号线读出的信号电位与从参考电位线提供的参考电位之间的差放大并输出。

公开(公告)号：US20100025584A1

公开(公告)日：2010-02-04

申请号：US12508846

申请日：2009-07-24

申请人： Keita SASAKI ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

发明人： Keita SASAKI ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

IPC分类号： H01L31/02 ,  H01L31/00

CPC分类号： H01L27/14669 ,  H01L27/1203 ,  H01L27/14683

摘要： An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

摘要翻译： 图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方，第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件，支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素，而不经由空腔，其中多个第一像素和多个第二像素被二维布置以形成像素区域，并且每个第二像素与 第一个像素。

公开(公告)号：US20090236526A1

公开(公告)日：2009-09-24

申请号：US12405497

申请日：2009-03-17

申请人： Keita Sasaki ,  Hiroto Honda ,  Hideyuki Funaki ,  Ikuo Fujiwara ,  Kazuhiro Suzuki

发明人： Keita Sasaki ,  Hiroto Honda ,  Hideyuki Funaki ,  Ikuo Fujiwara ,  Kazuhiro Suzuki

IPC分类号： H01L27/14

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/045 ,  G01J5/08 ,  G01J5/0853

摘要： An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part.

摘要翻译： 一种红外线传感器元件包括：第一信号布线部，包括第一信号线，设置在与设置有凹部的区域不同的半导体基板的第一区域上; 第二信号布线部分，包括第二信号线，并设置在第一区域上，以与第一信号布线部分相交; 支撑件，其包括设置在所述凹部上方的支撑布线部，并且包括在其第一端处电连接到所述第一信号线的第一线和与所述第一线平行布置的与所述第一线绝缘的第二线，以及 在其第一端电连接到第二信号线; 电连接到第一和第二导线的第二端的热电换能器; 设置在所述热电换能器上的红外线吸收层; 以及设置在所述凹部上的检测单元。

公开(公告)号：US08937274B2

公开(公告)日：2015-01-20

申请号：US13713304

申请日：2012-12-13

申请人： Risako Ueno ,  Hiroto Honda ,  Mitsuyoshi Kobayashi ,  Kazuhiro Suzuki ,  Honam Kwon ,  Hideyuki Funaki

发明人： Risako Ueno ,  Hiroto Honda ,  Mitsuyoshi Kobayashi ,  Kazuhiro Suzuki ,  Honam Kwon ,  Hideyuki Funaki

IPC分类号： H01L27/00 ,  H01L27/146

CPC分类号： H01L27/146 ,  H01L27/14605 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14645

摘要： A solid-state imaging device according to an embodiment includes: an imaging element including a semiconductor substrate and a plurality of pixel blocks, each of the pixel blocks including at least two of R pixels, G pixels, B pixels, and W pixels; a first optical system configured to form an image of an object on an imaging plane; and a second optical system including a microlens array having a plurality of microlenses provided for the respective pixels blocks, the second optical system being located between the imaging element and the first optical system, the second optical system being configured to reduce and re-image the image formed on the imaging plane onto each of the pixel blocks. A proportion of the W pixels to be provided increases in a direction from a center of each pixel block toward an outer periphery thereof.

摘要翻译： 根据实施例的固态成像装置包括：成像元件，包括半导体衬底和多个像素块，每个像素块包括R像素，G像素，B像素和W像素中的至少两个; 第一光学系统，被配置为在成像平面上形成物体的图像; 以及第二光学系统，其包括具有为各个像素块设置的多个微透镜的微透镜阵列，所述第二光学系统位于所述成像元件和所述第一光学系统之间，所述第二光学系统被配置为减小并重新成像 在成像平面上形成的每个像素块上的图像。 要提供的W像素的比例在从每个像素块的中心朝向其外周的方向上增加。

公开(公告)号：US08604581B2

公开(公告)日：2013-12-10

申请号：US12211427

申请日：2008-09-16

申请人： Risako Ueno ,  Hideyuki Funaki ,  Yoshinori Iida ,  Hiroto Honda

发明人： Risako Ueno ,  Hideyuki Funaki ,  Yoshinori Iida ,  Hiroto Honda

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14605 ,  H01L27/1464

摘要： A solid-state image pickup device has a photoelectric conversion element that converts light incident from a first surface of a substrate into a signal charge and accumulates the signal charge, a transistor that is formed on a second surface side opposite to the first surface of the substrate and reads out the signal charge accumulated by the photoelectric conversion element, a supporting substrate stuck to the second surface of the substrate, and an antireflection coating formed on the first surface of the substrate, wherein the first surface of the substrate includes a curved surface or an inclined surface forming a prescribed angle to the second surface.

摘要翻译： 固体摄像装置具有将从基板的第一面入射的光转换成信号电荷并积累信号电荷的光电转换元件，形成在与第一表面相反的第二表面侧的晶体管 读取由光电转换元件积累的信号电荷，粘贴到基板的第二表面的支撑基板和形成在基板的第一表面上的抗反射涂层，其中基板的第一表面包括弯曲表面 或与第二表面形成规定角度的倾斜表面。

公开(公告)号：US08304848B2

公开(公告)日：2012-11-06

申请号：US12883732

申请日：2010-09-16

申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

IPC分类号： H01L31/00 ,  H01L31/04

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

公开(公告)号：US08067740B2

公开(公告)日：2011-11-29

申请号：US12508846

申请日：2009-07-24

申请人： Keita Sasaki ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

发明人： Keita Sasaki ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

IPC分类号： H01L31/02

CPC分类号： H01L27/14669 ,  H01L27/1203 ,  H01L27/14683

摘要： An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

摘要翻译： 图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方，第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件，支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素，而不经由空腔，其中多个第一像素和多个第二像素被二维布置以形成像素区域，并且每个第二像素与 第一个像素。

公开(公告)号：US20090242951A1

公开(公告)日：2009-10-01

申请号：US12211427

申请日：2008-09-16

申请人： Risako UENO ,  Hideyuki Funaki ,  Yoshinori Ilda ,  Hiroto Honda

发明人： Risako UENO ,  Hideyuki Funaki ,  Yoshinori Ilda ,  Hiroto Honda

IPC分类号： H01L31/00

CPC分类号： H01L27/1462 ,  H01L27/14605 ,  H01L27/1464

摘要： A solid-state image pickup device has a photoelectric conversion element that converts light incident from a first surface of a substrate into a signal charge and accumulates the signal charge, a transistor that is formed on a second surface side opposite to the first surface of the substrate and reads out the signal charge accumulated by the photoelectric conversion element, a supporting substrate stuck to the second surface of the substrate, and an antireflection coating formed on the first surface of the substrate, wherein the first surface of the substrate includes a curved surface or an inclined surface forming a prescribed angle to the second surface.

摘要翻译： 固体摄像装置具有将从基板的第一面入射的光转换成信号电荷并积累信号电荷的光电转换元件，形成在与第一表面相反的第二表面侧的晶体管 读取由光电转换元件积累的信号电荷，粘贴到基板的第二表面的支撑基板和形成在基板的第一表面上的抗反射涂层，其中基板的第一表面包括弯曲表面 或与第二表面形成规定角度的倾斜表面。