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11.发明申请公开(公告)号：US20220223783A1
公开(公告)日：2022-07-14
申请号：US17217766
申请日：2021-03-30
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Mahesh Samant , Ikhtiar , Dmytro Apalkov
Abstract: A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.
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公开(公告)号：US20220165938A1
公开(公告)日：2022-05-26
申请号：US17100723
申请日：2020-11-20
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
Abstract: A device including a first magnetic layer, a templating structure and a second magnetic layer is described. The templating structure is on the first magnetic layer. The second magnetic layer is on the templating structure. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. At least one of the first magnetic layer and the second magnetic layer includes at least one of a Heusler compound and an L10 compound.
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13.发明申请公开(公告)号：US20200259076A1
公开(公告)日：2020-08-13
申请号：US16271721
申请日：2019-02-08
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , Yari Ferrante , Stuart S.P. Parkin , Jaewoo Jeong , Mahesh G. Samant
Abstract: Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by Ru1-xEx, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).
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公开(公告)号：US20250151628A1
公开(公告)日：2025-05-08
申请号：US18500692
申请日：2023-11-02
Inventor： Roman Chepulskyy , Dmytro Apalkov , FNU Ikhtiar , Jaewoo Jeong , Chirag Garg , Panagiotis Charilaos Filippou , See-Hun Yang , Mahesh G. Samant
Abstract: Methods and apparatuses are provided for MRAM devices including an Mn—Sb compound free layer MTJ. A device includes an MTJ including a reference layer, a tunneling barrier layer, and a top free layer, wherein the tunneling barrier layer is formed on the reference layer, the top free layer is formed over the tunneling barrier layer, and the top free layer includes an Mn—Sb compound; and a capping layer formed over the top free layer of the MTJ.
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公开(公告)号：US20250057050A1
公开(公告)日：2025-02-13
申请号：US18231734
申请日：2023-08-08
Inventor： Mahesh Samant , Panagiotis Charilaos Filippou , Chirag Garg , See-Hun Yang , Fnu Ikhtiar , Jaewoo Jeong , Roman Chepulskyy
Abstract: A magnetoresistive random-access memory cell includes a substrate; a sub-monolayer nitride layer, outward of the substrate, having a sub-monolayer nitride layer thickness less than 10 Angstroms; and a templating layer, outward of the sub-monolayer nitride layer, and including a binary alloy having an alternating layer lattice structure. A Heusler layer is located outward of the templating layer. The Heusler layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the Heusler layer, and a magnetic layer is outward of the tunnel barrier. In an alternative aspect, instead of the sub-monolayer nitride layer, a tantalum nitride layer with a thickness of ≤10 Angstroms+10% is employed.
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Patent Agency Ranking
公开(公告)号：US20240349622A1
公开(公告)日：2024-10-17
申请号：US18218926
申请日：2023-07-06
Inventor： Jaewoo Jeong , Tiar Ikhtiar , Panagiotis Charilaos Filippou , Chirag Garg , Mahesh Govind Samant
Abstract: A magnetic memory device includes a substrate, a seed layer above the substrate, a chemical templating layer above the seed layer, and a first magnetic layer above the chemical templating layer. The seed layer includes ScxN, MnxN, or MgO substantially oriented in (001) direction. The chemical templating layer includes a binary alloy having a Cu3Au prototype structure or a BiF3 prototype structure. The first magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy.
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公开(公告)号：US11804321B2
公开(公告)日：2023-10-31
申请号：US17100719
申请日：2020-11-20
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
IPC: H01F10/32 , H01F41/32 , C30B33/02 , C23C14/18 , C30B29/52 , C30B23/02 , C23C14/35 , C30B23/08 , C30B30/04 , H10N50/00 , H01F10/30 , H10B61/00 , H10N50/10
CPC classification number: H01F10/3254 , C23C14/185 , C23C14/35 , C30B23/025 , C30B23/08 , C30B29/52 , C30B30/04 , C30B33/02 , H01F10/30 , H01F10/3272 , H01F41/32 , H10B61/00 , H10N50/00 , H10N50/10
Abstract: A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L10 compound, the magnetic layer being in contact with the templating structure.
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公开(公告)号：US20230320231A1
公开(公告)日：2023-10-05
申请号：US17710438
申请日：2022-03-31
Inventor： SERGEY FALEEV , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Mahesh Samant , Jaewoo Jeong
CPC classification number: H01L43/10 , H01L27/228 , H01L43/12 , G11C11/161
Abstract: A magnetoresistive random-access memory cell includes a templating layer. The templating layer includes a binary alloy having an alternating layer lattice structure. The cell further includes a half metallic Heusler layer including a half metallic Heusler material having a tetragonal lattice structure. The half metallic Heusler layer is located outward of the templating layer, and has a Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic Heusler material. A tunnel barrier is located outward of the half metallic Heusler layer, and a magnetic layer is located outward of the tunnel barrier.
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公开(公告)号：US11751486B2
公开(公告)日：2023-09-05
申请号：US17100726
申请日：2020-11-20
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
CPC classification number: H10N50/85 , H01F10/3254 , H01F10/3272 , H01F41/32 , H10B61/00 , H10N50/01
Abstract: A device including a templating structure and a magnetic layer is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The magnetic layer is on the templating structure and includes at least one of a Heusler compound and an L10 compound. The magnetic layer is in contact with the templating structure and being magnetic at room temperature.
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20.发明授权公开(公告)号：US11557721B2
公开(公告)日：2023-01-17
申请号：US17174680
申请日：2021-02-12
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , Yari Ferrante , Stuart S. P. Parkin , Jaewoo Jeong , Mahesh G. Samant
Abstract: A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1−xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.
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