公开(公告)号：US20160035621A1

公开(公告)日：2016-02-04

申请号：US14883162

申请日：2015-10-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Trevor A. THOMPSON ,  Eric J. WHITE

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L21/288 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The method further includes removing the mask. The method still further includes forming spacers on sides of the conductive material. The method additionally includes forming a dielectric film on surfaces of the cap layer and the sidewall spacers.