公开(公告)号：US20160035621A1

公开(公告)日：2016-02-04

申请号：US14883162

申请日：2015-10-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Trevor A. THOMPSON ,  Eric J. WHITE

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L21/288 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The method further includes removing the mask. The method still further includes forming spacers on sides of the conductive material. The method additionally includes forming a dielectric film on surfaces of the cap layer and the sidewall spacers.

公开(公告)号：US20150137375A1

公开(公告)日：2015-05-21

申请号：US14526741

申请日：2014-10-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Trevor A. THOMPSON ,  Eric J. WHITE

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The method further includes removing the mask. The method still further includes forming spacers on sides of the conductive material. The method additionally includes forming a dielectric film on surfaces of the cap layer and the sidewall spacers.

公开(公告)号：US20150137374A1

公开(公告)日：2015-05-21

申请号：US14083929

申请日：2013-11-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Trevor A. THOMPSON ,  Eric J. WHITE

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The method further includes removing the mask. The method still further includes forming spacers on sides of the conductive material. The method additionally includes forming a dielectric film on surfaces of the cap layer and the sidewall spacers.

Abstract translation: 提供了在集成电路中制造铜线的方法。 制造半导体结构的方法包括在掩模中形成线开口。 该方法还包括在导线开口中电镀导电材料。 该方法还包括在导电材料上形成盖层。 该方法还包括去除掩模。 该方法还包括在导电材料的侧面上形成间隔物。 该方法还包括在盖层和侧壁间隔物的表面上形成电介质膜。