公开(公告)号：US20210335686A1

公开(公告)日：2021-10-28

申请号：US17238372

申请日：2021-04-23

Applicant: Infineon Technologies AG

Inventor： Stefan Schwab ,  Edmund Riedl

IPC: H01L23/31 ,  H01L23/495 ,  H01L23/42 ,  H01L21/56 ,  H01L21/54

Abstract: A structure includes a first sub-structure and a second sub-structure coupled with the first sub-structure and being a composite including filler particles in a matrix. A surface of the first sub-structure has a surface profile with first elevations and first recesses configured to enable at least part of the filler particles to at least partially enter the first recesses to thereby form an interlayer including the first elevations of the first sub-structure and filler particles in the matrix of the second sub-structure.

公开(公告)号：US10930614B2

公开(公告)日：2021-02-23

申请号：US15659670

申请日：2017-07-26

Applicant: Infineon Technologies AG

Inventor： Manfred Mengel ,  Alexander Heinrich ,  Steffen Orso ,  Thomas Behrens ,  Oliver Eichinger ,  Lim Fong ,  Evelyn Napetschnig ,  Edmund Riedl

IPC: H01L23/00 ,  B23K35/30 ,  B23K35/26 ,  B23K35/28 ,  C22C13/00 ,  C22C18/00 ,  C22C18/04 ,  C22C30/04 ,  C22C30/06 ,  H01L23/488 ,  H01L23/495 ,  B23K1/00

Abstract: A chip arrangement including a chip comprising a chip back side; a back side metallization on the chip back side, the back side metallization including a plurality of layers; a substrate comprising a surface with a metal layer; a zinc-based solder alloy configured to attach the back side metallization to the metal layer, the zinc-based solder alloy having by weight 8% to 20% aluminum, 0.5% to 20% magnesium, 0.5% to 20% gallium, and the balance zinc; wherein the metal layer is configured to provide a good wettability of the zinc-based solder alloy on the surface of the substrate. The plurality of layers may include one or more of a contact layer configured to contact a semiconductor material of the chip back side; a barrier layer; a solder reaction, and an oxidation protection layer configured to prevent oxidation of the solder reaction layer.

公开(公告)号：US20200219841A1

公开(公告)日：2020-07-09

申请号：US16820069

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20230260860A1

公开(公告)日：2023-08-17

申请号：US18130662

申请日：2023-04-04

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Steffen Jordan ,  Stefan Miethaner ,  Stefan Schwab

IPC: H01L23/29 ,  H01L21/56

CPC classification number: H01L23/29 ,  H01L21/56

Abstract: A method of manufacturing a package includes forming an adhesion promoter on at least part of an electronic component. The adhesion promoter is a morphological adhesion promoter including a morphological structure having a plurality of openings. The method further includes at least partially encapsulating the electronic component with an inorganic encapsulant with the adhesion promoter in between. The adhesion promoter enhances adhesion between at least part of the electronic component and the encapsulant.

公开(公告)号：US11652012B2

公开(公告)日：2023-05-16

申请号：US16913188

申请日：2020-06-26

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Steffen Jordan ,  Stefan Miethaner ,  Stefan Schwab

IPC: H01L23/29 ,  H01L21/56

CPC classification number: H01L23/29 ,  H01L21/56

Abstract: A package includes an electronic component, an inorganic encapsulant encapsulating at least part of the electronic component, and an adhesion promoter between at least part of the electronic component and the encapsulant.

公开(公告)号：US10896893B2

公开(公告)日：2021-01-19

申请号：US16820069

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20190035764A1

公开(公告)日：2019-01-31

申请号：US16036252

申请日：2018-07-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US12230547B2

公开(公告)日：2025-02-18

申请号：US18130662

申请日：2023-04-04

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Steffen Jordan ,  Stefan Miethaner ,  Stefan Schwab

IPC: H01L23/29 ,  H01L21/56

Abstract: A method of manufacturing a package includes forming an adhesion promoter on at least part of an electronic component. The adhesion promoter is a morphological adhesion promoter including a morphological structure having a plurality of openings. The method further includes at least partially encapsulating the electronic component with an inorganic encapsulant with the adhesion promoter in between. The adhesion promoter enhances adhesion between at least part of the electronic component and the encapsulant.

公开(公告)号：US10892247B2

公开(公告)日：2021-01-12

申请号：US16820057

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20200227278A1

公开(公告)日：2020-07-16

申请号：US16743571

申请日：2020-01-15

Applicant: Infineon Technologies AG

Inventor： Johann Gatterbauer ,  Wolfgang Lehnert ,  Norbert Mais ,  Verena Muhr ,  Edmund Riedl ,  Harry Sax

IPC: H01L21/48 ,  H01L21/02 ,  H01L21/56 ,  H01L23/495 ,  H01L23/31

Abstract: A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.