公开(公告)号：US11101343B2

公开(公告)日：2021-08-24

申请号：US16404284

申请日：2019-05-06

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Thomas Basler ,  Wolfgang Bergner ,  Rudolf Elpelt ,  Romain Esteve ,  Michael Hell ,  Daniel Kueck ,  Caspar Leendertz ,  Dethard Peters ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/10

Abstract: A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.

公开(公告)号：US20190131446A1

公开(公告)日：2019-05-02

申请号：US16171605

申请日：2018-10-26

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Rudolf Elpelt ,  Reinhold Schoerner ,  Larissa Wehrhahn-Kilian ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/861 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/66 ,  H01L21/04 ,  H01L21/308

Abstract: A semiconductor device includes a drift zone formed in a semiconductor portion. In a transition section of the semiconductor portion a vertical extension of the semiconductor portion decreases from a first vertical extension to a second vertical extension. A junction termination zone of a conductivity type complementary to a conductivity type of the drift zone is formed between a first surface of the semiconductor portion and the drift zone and includes a tapering portion in the transition section. In the tapering portion a vertical extension of the junction termination zone decreases from a maximum vertical extension to zero within a lateral width of at least twice the maximum vertical extension.

公开(公告)号：US09257511B2

公开(公告)日：2016-02-09

申请号：US14033631

申请日：2013-09-23

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Christian Hecht ,  Jens Konrath ,  Wolfgang Bergner ,  Hans-Joachim Schulze ,  Rudolf Elpelt

IPC: H01L29/15 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L21/045 ,  H01L21/046 ,  H01L21/047 ,  H01L21/0495 ,  H01L21/565 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3171 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.

Abstract translation: 碳化硅器件包括碳化硅衬底，无机钝化层结构和成型材料层。 无机钝化层结构至少部分地覆盖碳化硅衬底的主表面，并且模制材料层被布置成与无机钝化层结构相邻。

公开(公告)号：US12266694B2

公开(公告)日：2025-04-01

申请号：US18398823

申请日：2023-12-28

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Thomas Basler ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Michael Hell ,  Jens Peter Konrath ,  Shiqin Niu ,  Dethard Peters ,  Konrad Schraml ,  Bernd Leonhard Zippelius

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

Abstract: A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.

公开(公告)号：US20250096149A1

公开(公告)日：2025-03-20

申请号：US18885846

申请日：2024-09-16

Applicant: Infineon Technologies AG

Inventor： Rudolf Elpelt ,  Francisco Javier Santos Rodriguez ,  Bernd Zippelius ,  Antonio Vellei ,  Alexander Breymesser

IPC: H01L23/544 ,  H01L21/04 ,  H01L23/31 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/872

Abstract: A semiconductor device includes a single-crystalline silicon carbide portion with a first surface, an opposite second surface, and a third surface extending from the first surface in a direction of the second surface. Along the third surface, hydrogen atoms and/or atoms of one or more nonmetal elements other than silicon and having an atomic number greater than six saturate dangling bonds of the silicon carbide portion and/or a passivating coating is in direct contact with the third surface. The semiconductor device further includes a glass structure and an interface layer structure between the third surface and the glass structure.

公开(公告)号：US12176396B2

公开(公告)日：2024-12-24

申请号：US18076774

申请日：2022-12-07

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Thomas Ganner ,  Caspar Leendertz

IPC: H01L29/10 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

公开(公告)号：US20240136406A1

公开(公告)日：2024-04-25

申请号：US18398823

申请日：2023-12-28

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Thomas Basler ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Michael Hell ,  Jens Peter Konrath ,  Shiqin Niu ,  Dethard Peters ,  Konrad Schraml ,  Bernd Leonhard Zippelius

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/7813

Abstract: A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.

公开(公告)号：US20230101290A1

公开(公告)日：2023-03-30

申请号：US18076774

申请日：2022-12-07

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Thomas Ganner ,  Caspar Leendertz

IPC: H01L29/10 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

公开(公告)号：US20230094032A1

公开(公告)日：2023-03-30

申请号：US18073860

申请日：2022-12-02

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Thomas Basler ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Michael Hell ,  Jens Peter Konrath ,  Shiqin Niu ,  Dethard Peters ,  Konrad Schraml ,  Bernd Leonhard Zippelius

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

Abstract: A method of producing a silicon carbide (SiC) device includes: forming a stripe-shaped trench gate structure that extends from a first surface of a SiC body into the SiC body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; forming at least one source region of a first conductivity type; and forming a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. Forming the shielding region includes: forming a deep shielding portion; and forming a top shielding portion between the first surface and the deep shielding portion, the top shielding portion being in contact with the first bottom edge.

公开(公告)号：US11552173B2

公开(公告)日：2023-01-10

申请号：US16986338

申请日：2020-08-06

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Thomas Basler ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Michael Hell ,  Jens Peter Konrath ,  Shiqin Niu ,  Dethard Peters ,  Konrad Schraml ,  Bernd Leonhard Zippelius

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

Abstract: A silicon carbide device includes a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body. The gate structure has a gate length along a lateral first direction. A bottom surface and an active first gate sidewall of the gate structure are connected via a first bottom edge of the gate structure. The silicon carbide device further includes at least one source region of a first conductivity type. A shielding region of a second conductivity type is in contact with the first bottom edge of the gate structure across at least 20% of the gate length.