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公开(公告)号：US10153743B2
公开(公告)日：2018-12-11
申请号：US15719043
申请日：2017-09-28
Applicant: INPHI CORPORATION
Inventor： Guojun Ren
Abstract: The present invention is directed to electrical circuits and techniques thereof. More specifically, an embodiment of the present invention provides a variable gain amplifier that includes a first transistor and a second transistor whose gate terminals are coupled to a first input terminal. A first drain terminal of the first transistor and a first source terminal of the second transistor is coupled to a voltage gain control switch. There are other embodiments as well.
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公开(公告)号：US09866231B2
公开(公告)日：2018-01-09
申请号：US15426506
申请日：2017-02-07
Applicant: INPHI CORPORATION
Inventor： Michael Le , James Gorecki , Jamal Riani , Jorge Pernillo , Amber Tan , Karthik Gopalakrishnan , Belal Helal , Chang-Feng Loi , Irene Quek , Guojun Ren
CPC classification number: H03M1/38 , H03M1/0604 , H03M1/1038 , H03M1/121 , H03M1/1215 , H03M1/1245 , H03M1/468 , H04L25/03012 , H04L25/03019 , H04L25/03878
Abstract: In an example, the present invention provides an analog to digital converter device for a high speed data transmission from 1 GS-s to 100 GS-s, although there can be other variations. In an example, the device has an input receiver device coupled to a transimpedance amplifier. In an example, the transimpedance amplifier is coupled to an input stream of data at 10 GHz to 100 GHz, or other variations.
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公开(公告)号：US09602116B1
公开(公告)日：2017-03-21
申请号：US14990309
申请日：2016-01-07
Applicant: INPHI CORPORATION
Inventor： Michael Le , James Gorecki , Jamal Riani , Jorge Pernillo , Amber Tan , Karthik Gopalakrishnan , Belal Helal , Chang-Feng Loi , Irene Quek , Guojun Ren
CPC classification number: H03M1/38 , H03M1/0604 , H03M1/1038 , H03M1/121 , H03M1/1215 , H03M1/1245 , H03M1/468 , H04L25/03012 , H04L25/03019 , H04L25/03878
Abstract: In an example, the present invention provides an analog to digital converter device for a high speed data transmission from 1 GS-s to 100 GS-s, although there can be other variations. In an example, the device has an input receiver device coupled to a transimpedance amplifier. In an example, the transimpedance amplifier is coupled to an input stream of data at 10 GHz to 100 GHz, or other variations.
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14.发明授权公开(公告)号：US09178563B2
公开(公告)日：2015-11-03
申请号：US14508586
申请日：2014-10-07
Applicant: INPHI CORPORATION
Inventor： Guojun Ren , Karthik S. Gopalakrishnan
Abstract: The voltage regulator device has a wide band amplifier having an input reference voltage, Vref and an input feedback voltage, Vfbk. The device has a source follower coupled to the wide band amplifier, the source follower coupled to an output of the wide band amplifier. The device has a VDD source, a regulator output, and a current source coupled to the source follower and the VDD source. The device has a low frequency path comprising a first transistor. The first transistor has a first gate, a first source, and a first drain. The first source is coupled to the VDD source. The first gate is coupled to a slow node, and the first drain is coupled to the regulator output. The low frequency path comprises a RC network, which has a capacitor, a resistor, and the slow node configured between the resistor and the capacitor. The device has a high frequency path comprising a second transistor. The second transistor has a second gate, a second source, and a second drain. The second source is coupled to the VDD source. The second gate is coupled to a fast node, and the second drain is coupled to the regulator output.
Abstract translation: 电压调节器装置具有宽带放大器，其具有输入参考电压Vref和输入反馈电压Vfbk。 该器件具有耦合到宽带放大器的源极跟随器，源极跟随器耦合到宽带放大器的输出。 器件具有VDD源，稳压器输出和耦合到源极跟随器和VDD源的电流源。 该器件具有包括第一晶体管的低频路径。 第一晶体管具有第一栅极，第一源极和第一漏极。 第一个源极耦合到VDD源。 第一栅极耦合到慢节点，第一漏极耦合到调节器输出端。 低频路径包括RC网络，其具有电容器，电阻器和配置在电阻器和电容器之间的慢节点。 该器件具有包括第二晶体管的高频路径。 第二晶体管具有第二栅极，第二源极和第二漏极。 第二个源极耦合到VDD源。 第二栅极耦合到快节点，第二漏极耦合到调节器输出。
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