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公开(公告)号:US09653534B2
公开(公告)日:2017-05-16
申请号:US14572974
申请日:2014-12-17
发明人: Takashi Ando , Eduard A. Cartier , Michael P. Chudzik , Aritra Dasgupta , Herbert L. Ho , Donghun Kang , Rishikesh Krishnan , Vijay Narayanan , Kern Rim
IPC分类号: H01L29/66 , H01L49/02 , H01L27/108 , H01L23/26
CPC分类号: H01L21/02365 , H01G4/005 , H01L21/02178 , H01L21/02617 , H01L21/20 , H01L21/3221 , H01L23/26 , H01L27/10861 , H01L27/1087 , H01L28/60 , H01L28/90 , H01L29/66181 , H01L2924/0002 , H01L2924/00
摘要: A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.
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公开(公告)号:US20160181367A1
公开(公告)日:2016-06-23
申请号:US14580274
申请日:2014-12-23
发明人: Shafaat Ahmed , Murshed M. Chowdhury , Aritra Dasgupta , Mohammad Hasanuzzaman , Shahrukh Akbar Khan , Joyeeta Nag
IPC分类号: H01L29/10 , H01L21/265 , H01L29/78 , H01L29/66
CPC分类号: H01L29/1045 , H01L21/265 , H01L21/26513 , H01L29/66545 , H01L29/66553 , H01L29/66795 , H01L29/7851
摘要: A method of forming a finFET structure having an ion implanted intermediate region next to the channel region of a finFET gate. The intermediate region is formed in a manner to reduce or eliminate migration of the dopant to undoped regions of the finFET thus forming abrupt finFET junction.
摘要翻译: 一种在finFET栅极的沟道区域旁边形成离子注入中间区域的finFET结构的方法。 中间区域以减少或消除掺杂剂向finFET的未掺杂区域迁移的方式形成,从而形成突变的finFET结。
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