摘要:
A micro-fabricated device, includes a support structure having an aperture formed therein, and a device substrate disposed within the aperture. The micro-fabricated device further includes a thermally isolating structure thermally coupling the device substrate to the support structure. The thermally isolating structure includes at least one n-doped region and at least one p-doped region formed on or in the thermally isolating structure and separated from each other. In addition, the thermally isolating structure includes an electrical interconnect connecting at least one n-doped region and at least one p-doped region, forming an integrated thermoelectric device.
摘要:
An electrical device includes a plurality of integrated circuits respectively fabricated in a first substrate bonded to a second substrate by a bond that deforms above, but not below, a deformation condition. The deformation condition can be a predetermined pressure from opposing surfaces on the first and second substrates or it can be a predetermined combination of temperature and pressure from opposing surfaces on the first and second substrates.
摘要:
A structured material is transferred to a substrate. A release film is applied to a carrier. A material is deposited on a surface of the release film. The material is processed to form the structured material. The structured material is coupled to the substrate. The release film is exposed to reduce adhesion strength between the release film and the carrier, and the carrier and the release film are removed from the structured material.
摘要:
A hermetically sealed area includes a substrate having microelectronics thereon. A desiccant is operatively disposed within the hermetically sealed area. An equipotential region is substantially maintained around the desiccant.
摘要:
A structured material is transferred to a substrate. A release film is applied to a carrier. A material is deposited on a surface of the release film. The material is processed to form the structured material. The structured material is coupled to the substrate. The release film is exposed to reduce adhesion strength between the release film and the carrier, and the carrier and the release film are removed from the structured material.
摘要:
A hermetically sealed area includes a substrate having microelectronics thereon. A desiccant is operatively disposed within the hermetically sealed area. An equipotential region is substantially maintained around the desiccant.
摘要:
A semiconductor package includes a substrate having a first surface portion in a cavity. The first surface portion includes an artificially formed grass structure. The package includes a getter film formed over the grass structure.
摘要:
A storage device having a read/write mechanism including a cantilever portion. The cantilever portion includes a non-single-crystal silicon body portion and a single crystal silicon tip.
摘要:
Embodiments of the present invention pertain to an electronic portion of a MEMs ion gauge with ion collectors bowed out of plane to form a three dimensional arrangement and a method for forming an electronic portion of a MEMs ion gauge with ion collectors bowed out of plane to form a three dimensional arrangement. In one embodiment, an ion gauge substrate is formed. The electronic portion of the MEMs ion gauge is assembled by coupling a plurality of ion collectors with the ion gauge substrate, wherein the coupling of the plurality of ion collectors with the ion gauge substrate further comprises performing an operation that causes the plurality of ion collectors to be bowed out of plane to form a three dimensional arrangement.
摘要:
A storage device having a read/write mechanism including a cantilever portion. The cantilever portion includes a non-single-crystal silicon body portion and a single crystal silicon tip.