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34 条记录 (耗时 0.025 秒)

    Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the same
    12.
    发明授权
    Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the same 有权
    磁存储器件，电子系统和包括其的存储卡，其制造方法和形成其相同的垂直磁性膜的方法

    公开(公告)号：US08445981B2

    公开(公告)日：2013-05-21

    申请号：US13177115

    申请日：2011-07-06

    申请人： Woo Chang Lim ,  Jangeun Lee ,  SeChung Oh ,  Woojin Kim

    发明人： Woo Chang Lim ,  Jangeun Lee ,  SeChung Oh ,  Woojin Kim

    IPC分类号： H01L29/82 ,  H01L21/00

    CPC分类号： H01L43/08 ,  G11C11/161

    摘要： Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming perpendicular magnetic films are provided. The magnetic memory device may include a seed pattern on a substrate having a first crystal structure, a perpendicular magnetic pattern on the seed pattern having a second crystal structure, and an interlayer pattern between the seed pattern and the perpendicular magnetic pattern. The interlayer pattern may reduce a stress caused by a difference between horizontal lattice constants of the first and the second crystal structures.

    摘要翻译： 提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及形成垂直磁膜的方法。 磁存储器件可以包括在具有第一晶体结构的衬底上的种子图案，具有第二晶体结构的种子图案上的垂直磁图案，以及种子图案和垂直磁图案之间的层间图案。 层间图案可以减小由第一和第二晶体结构的水平晶格常数之间的差引起的应力。

    Methods of fabricating magnetic memory devices with thin conductive bridges
    14.
    发明授权
    Methods of fabricating magnetic memory devices with thin conductive bridges 有权
    用薄导电桥制造磁存储器件的方法

    公开(公告)号：US08198102B2

    公开(公告)日：2012-06-12

    申请号：US12539747

    申请日：2009-08-12

    申请人： KyungTae Nam ,  Jangeun Lee ,  Sechung Oh ,  Woojin Kim ,  Dae Kyom Kim ,  Junho Jeong

    发明人： KyungTae Nam ,  Jangeun Lee ,  Sechung Oh ,  Woojin Kim ,  Dae Kyom Kim ,  Junho Jeong

    IPC分类号： H01L21/00

    CPC分类号： H01L43/12

    摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.

    摘要翻译： 磁存储器件包括在衬底上的自由层和引导层。 绝缘层介于自由层和引导层之间。 至少一个导电桥通过绝缘层并电连接自由层和引导层。 可以在引导层和绝缘层之间插入扩散阻挡层。 该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。 还描述了相关的制造方法。

    MAGNETIC MEMORY DEVICES WITH THIN CONDUCTIVE BRIDGES
    16.
    发明申请
    MAGNETIC MEMORY DEVICES WITH THIN CONDUCTIVE BRIDGES 有权
    具有薄导电桥的磁记忆装置

    公开(公告)号：US20120217599A1

    公开(公告)日：2012-08-30

    申请号：US13469979

    申请日：2012-05-11

    申请人： KyungTae Nam ,  Jangeun Lee ,  Sechung Oh ,  Woojin Kim ,  Dae Kyom Kim ,  Junho Jeong

    发明人： KyungTae Nam ,  Jangeun Lee ,  Sechung Oh ,  Woojin Kim ,  Dae Kyom Kim ,  Junho Jeong

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12

    摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.

    摘要翻译： 磁存储器件包括在衬底上的自由层和引导层。 绝缘层介于自由层和引导层之间。 至少一个导电桥通过绝缘层并电连接自由层和引导层。 可以在引导层和绝缘层之间插入扩散阻挡层。 该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。 还描述了相关的制造方法。

    Method of Fabricating Semiconductor Device and Apparatus for Fabricating the Same
    17.
    发明申请
    Method of Fabricating Semiconductor Device and Apparatus for Fabricating the Same 有权
    制造半导体器件的方法及其制造方法

    公开(公告)号：US20120135544A1

    公开(公告)日：2012-05-31

    申请号：US13305377

    申请日：2011-11-28

    申请人： Woojin Kim ,  Jangeun Lee ,  Sechung Oh ,  Junho Jeong ,  Heeju Shin

    发明人： Woojin Kim ,  Jangeun Lee ,  Sechung Oh ,  Junho Jeong ,  Heeju Shin

    IPC分类号： H01L21/30 ,  C23C16/455 ,  C23C16/46

    CPC分类号： C23C16/345 ,  C23C16/403 ,  C23C16/45536 ,  C23C16/46 ,  G11C11/161 ,  H01L27/222 ,  H01L43/10

    摘要： Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes forming a plurality of magnetic memory patterns spaced apart from each other on a substrate, with each of the magnetic memory patterns including a free pattern, a tunnel barrier pattern, and a reference pattern which are stacked on the substrate, performing a magnetic thermal treatment process on the magnetic memory patterns, and forming a passivation layer on the magnetic memory patterns. The magnetic thermal treatment process and the forming of the passivation layer are simultaneously performed in one reactor.

    摘要翻译： 提供一种制造半导体器件的方法。 制造半导体器件的方法包括在衬底上形成彼此间隔开的多个磁存储器图案，其中每个磁存储器图案包括堆叠在基板上的自由图案，隧道势垒图案和参考图案 对磁存储器图案执行磁热处理工艺，以及在磁存储器图案上形成钝化层。 磁性热处理工艺和钝化层的形成同时在一个反应​​器中进行。

    MAGNETIC MEMORY DEVICES, ELECTRONIC SYSTEMS AND MEMORY CARDS INCLUDING THE SAME, METHODS OF MANUFACTURING THE SAME, AND METHODS OF FORMING A PERPENDICULAR MAGNETIC FILM OF THE SAME
    18.
    发明申请
    MAGNETIC MEMORY DEVICES, ELECTRONIC SYSTEMS AND MEMORY CARDS INCLUDING THE SAME, METHODS OF MANUFACTURING THE SAME, AND METHODS OF FORMING A PERPENDICULAR MAGNETIC FILM OF THE SAME 有权
    磁记录装置，电子系统和包括其的记忆卡，其制造方法以及形成其相应磁性膜的方法

    公开(公告)号：US20120018825A1

    公开(公告)日：2012-01-26

    申请号：US13177115

    申请日：2011-07-06

    申请人： Woo Chang Lim ,  Jangeun Lee ,  SeChung Oh ,  Woojin Kim

    发明人： Woo Chang Lim ,  Jangeun Lee ,  SeChung Oh ,  Woojin Kim

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161

    摘要： Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming perpendicular magnetic films are provided. The magnetic memory device may include a seed pattern on a substrate having a first crystal structure, a perpendicular magnetic pattern on the seed pattern having a second crystal structure, and an interlayer pattern between the seed pattern and the perpendicular magnetic pattern. The interlayer pattern may reduce a stress caused by a difference between horizontal lattice constants of the first and the second crystal structures.

    摘要翻译： 提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及形成垂直磁膜的方法。 磁存储器件可以包括在具有第一晶体结构的衬底上的种子图案，具有第二晶体结构的种子图案上的垂直磁图案，以及种子图案和垂直磁图案之间的层间图案。 层间图案可以减小由第一和第二晶体结构的水平晶格常数之间的差引起的应力。

    Magnetic memory devices with thin conductive bridges
    19.
    发明授权
    Magnetic memory devices with thin conductive bridges 有权
    具有薄导电桥的磁存储器件

    公开(公告)号：US08575667B2

    公开(公告)日：2013-11-05

    申请号：US13469979

    申请日：2012-05-11

    申请人： KyungTae Nam ,  Jangeun Lee ,  Sechung Oh ,  Woojin Kim ,  Dae Kyom Kim ,  Junho Jeong

    发明人： KyungTae Nam ,  Jangeun Lee ,  Sechung Oh ,  Woojin Kim ,  Dae Kyom Kim ,  Junho Jeong

    IPC分类号： H01L21/02

    CPC分类号： H01L43/12

    摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.

    摘要翻译： 磁存储器件包括在衬底上的自由层和引导层。 绝缘层介于自由层和引导层之间。 至少一个导电桥通过绝缘层并电连接自由层和引导层。 可以在引导层和绝缘层之间插入扩散阻挡层。 该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。 还描述了相关的制造方法。

    METHODS OF FABRICATING MAGNETIC MEMORY DEVICES WITH THIN CONDUCTIVE BRIDGES
    20.
    发明申请
    METHODS OF FABRICATING MAGNETIC MEMORY DEVICES WITH THIN CONDUCTIVE BRIDGES 有权
    制造具有薄导电桥的磁记忆体装置的方法

    公开(公告)号：US20100041168A1

    公开(公告)日：2010-02-18

    申请号：US12539747

    申请日：2009-08-12

    申请人： KyungTae Nam ,  Jangeun Lee ,  Sechung Oh ,  Woojin Kim ,  Dae Kyom Kim ,  Junho Jeong

    发明人： KyungTae Nam ,  Jangeun Lee ,  Sechung Oh ,  Woojin Kim ,  Dae Kyom Kim ,  Junho Jeong

    IPC分类号： H01L43/00

    CPC分类号： H01L43/12

    摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.

    摘要翻译： 磁存储器件包括在衬底上的自由层和引导层。 绝缘层介于自由层和引导层之间。 至少一个导电桥通过绝缘层并电连接自由层和引导层。 可以在引导层和绝缘层之间插入扩散阻挡层。 该装置还可以包括在与绝缘层相对的自由层侧面上具有固定磁化方向的参考层和参考层与自由层之间的隧道势垒。 还描述了相关的制造方法。