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公开(公告)号：US20080130000A1
公开(公告)日：2008-06-05
申请号：US11868911
申请日：2007-10-08
CPC分类号： G01B11/0683 , G01N21/55
摘要： Methods of subtracting the copper contribution to spectra obtained from a substrate during chemical mechanical polishing are described.
摘要翻译： 描述了在化学机械抛光期间减去从基板获得的光谱对铜的贡献的方法。
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公开(公告)号：US10105811B2
公开(公告)日：2018-10-23
申请号：US13207213
申请日：2011-08-10
IPC分类号： G01B7/06 , B24B37/013 , B24B49/10 , H01L21/67
摘要： An eddy current monitoring system may include an elongated core. One or more coils may be coupled with the elongated core for producing an oscillating magnetic field that may couple with one or more conductive regions on a wafer. The core may be translated relative to the wafer to provide improved resolution while maintaining sufficient signal strength. An eddy current monitoring system may include a DC-coupled marginal oscillator for producing an oscillating magnetic field at a resonant frequency, where the resonant frequency may change as a result of changes to one or more conductive regions. Eddy current monitoring systems may be used to enable real-time profile control.
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公开(公告)号：US20110195528A1
公开(公告)日：2011-08-11
申请号：US13089189
申请日：2011-04-18
IPC分类号： H01L21/66
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , B24B51/00 , H01L22/26
摘要： A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
摘要翻译： 一种用于化学机械抛光中的过程控制的计算机实现方法，其中在计量站测量衬底的初始预抛光厚度，从衬底的初始厚度确定端点算法的参数，抛光衬底 在抛光台处，当使用端点算法检测到端点标准时抛光停止。
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14.发明授权公开(公告)号：US07682221B2
公开(公告)日：2010-03-23
申请号：US11677450
申请日：2007-02-21
CPC分类号： B24B37/013 , B24B49/02 , B24B49/10 , B24B49/12 , G01B7/105 , G01B11/0683
摘要： A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.
摘要翻译： 化学机械抛光装置和方法可以使用涡流监测系统和光学监测系统。 来自监控系统的信号可以组合在输出线上并由计算机提取。 可以计算抛光垫的厚度。 涡流监测系统和光学监测系统可以测量基板上基本相同的位置。
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公开(公告)号：US20090253351A1
公开(公告)日：2009-10-08
申请号：US12433433
申请日：2009-04-30
申请人： Gabriel Lorimer Miller , Manoocher Birang , Nils Johansson , Boguslaw A. Swedek , Dominic J. Benvegnu
发明人： Gabriel Lorimer Miller , Manoocher Birang , Nils Johansson , Boguslaw A. Swedek , Dominic J. Benvegnu
CPC分类号： G01N19/02 , B24B37/013 , B24B49/16
摘要： A system method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer.
摘要翻译： 描述了用于监测经历抛光的基底的摩擦系数的系统，方法和装置。 抛光垫组件包括包括抛光表面的抛光层，以及柔性地联接到抛光层上的衬底接触构件，其具有与衬底的暴露表面接触的顶表面。 顶表面的至少一部分与抛光表面基本共面。 提供传感器以测量基板接触构件的横向位移。 一些实施例可以在化学机械抛光期间提供准确的端点检测以指示下层的曝光。
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16.发明授权Computer-implemented method for process control in chemical mechanical polishing 失效化学机械抛光过程控制计算机实现方法公开(公告)号：US07585202B2
公开(公告)日：2009-09-08
申请号：US11923082
申请日：2007-10-24
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , B24B51/00 , H01L22/26
摘要： A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
摘要翻译： 一种用于化学机械抛光中的过程控制的计算机实现方法，其中在计量站测量衬底的初始预抛光厚度，从衬底的初始厚度确定端点算法的参数，抛光衬底 在抛光台处，当使用端点算法检测到端点标准时抛光停止。
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17.发明授权公开(公告)号：US07513818B2
公开(公告)日：2009-04-07
申请号：US10977479
申请日：2004-10-28
申请人： Gabriel Lorimer Miller , Manoocher Birang , Nils Johansson , Boguslaw A. Swedek , Dominic J. Benvegnu
发明人： Gabriel Lorimer Miller , Manoocher Birang , Nils Johansson , Boguslaw A. Swedek , Dominic J. Benvegnu
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B24B37/042 , B24B49/16 , G01N19/02
摘要： A system, method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer.
摘要翻译： 描述了用于监测经历抛光的基底的摩擦系数的系统，方法和装置。 抛光垫组件包括包括抛光表面的抛光层，以及柔性地联接到抛光层上的衬底接触构件，其具有与衬底的暴露表面接触的顶表面。 顶表面的至少一部分与抛光表面基本共面。 提供传感器以测量基板接触构件的横向位移。 一些实施例可以在化学机械抛光期间提供准确的端点检测以指示下层的曝光。
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18.发明授权公开(公告)号：US07374477B2
公开(公告)日：2008-05-20
申请号：US10123917
申请日：2002-04-16
CPC分类号： B24B49/10 , B24B37/013 , B24B37/205 , B24B49/105 , B24B49/12
摘要： A polishing system can have a rotatable platen, a polishing pad secured to the platen, a carrier head to hold a substrate against the polishing pad, and an eddy current monitoring system including a coil or ferromagnetic body that extends at least partially through the polishing pad. A polishing pad can have a polishing layer and a coil or ferromagnetic body secured to the polishing layer. Recesses can be formed in a transparent window in the polishing pad.
摘要翻译： 抛光系统可以具有可旋转的压板，固定到压板的抛光垫，用于将衬底保持在抛光垫上的载体头，以及涡流监测系统，其包括线圈或铁磁体，其至少部分延伸穿过抛光垫 。 抛光垫可以具有固定到抛光层的抛光层和线圈或铁磁体。 凹槽可以在抛光垫的透明窗口中形成。
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公开(公告)号：US07294039B2
公开(公告)日：2007-11-13
申请号：US11467116
申请日：2006-08-24
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , B24B51/00 , H01L22/26
摘要： A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
摘要翻译： 一种用于化学机械抛光中的过程控制的计算机实现方法，其中在计量站测量衬底的初始预抛光厚度，从衬底的初始厚度确定端点算法的参数，抛光衬底 在抛光台处，当使用端点算法检测到端点标准时抛光停止。
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公开(公告)号：US06506097B1
公开(公告)日：2003-01-14
申请号：US09764733
申请日：2001-01-16
申请人： Bret W. Adams , Boguslaw A. Swedek , Rajeev Bajaj , Savitha Nanjangud , Andreas Norbert Wiswesser , Stan D. Tsai , David A. Chan , Fred C. Redeker , Manoocher Birang
发明人： Bret W. Adams , Boguslaw A. Swedek , Rajeev Bajaj , Savitha Nanjangud , Andreas Norbert Wiswesser , Stan D. Tsai , David A. Chan , Fred C. Redeker , Manoocher Birang
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/04 , B24B49/12 , H01L21/30625
摘要： An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.
摘要翻译： 一种用于两步抛光工艺的光学监视系统，其为多个径向区域中的每一个产生反射迹线。 当任何反射迹线表示金属层的初始间隙时，CMP设备可以从高选择性浆料切换到低选择性浆料，并且当所有反射迹线表示氧化物层已经完全暴露时，抛光可能停止。
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