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    Method of manufacturing integrated spin valve head
    12.
    发明授权
    Method of manufacturing integrated spin valve head 失效
    集成自旋阀头的制造方法

    公开(公告)号：US07162791B2

    公开(公告)日：2007-01-16

    申请号：US11011995

    申请日：2004-12-14

    申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    IPC分类号： G11B5/127 ,  G11B5/83 ,  H04R31/00

    CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： Currently, in a process of manufacturing a top spin valve structure, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer.

    摘要翻译： 目前，在制造顶部自旋阀结构的过程中，自旋阀头的屏蔽与屏蔽间隔不能低于约800，这主要是由于传感器与铅的短路问题。 现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。

    Process for manufacturing a top spin valve
    13.
    发明授权
    Process for manufacturing a top spin valve 失效
    制造顶部自旋阀的方法

    公开(公告)号：US07060321B2

    公开(公告)日：2006-06-13

    申请号：US11011994

    申请日：2004-12-14

    申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    IPC分类号： B05D5/12 ,  G11B5/84

    CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

    摘要翻译： 目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。 现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。 描述本发明的五个实施例。

    Process for manufacturing a bottom spin valve structure
    15.
    发明授权
    Process for manufacturing a bottom spin valve structure 失效
    底部自旋阀结构的制造方法

    公开(公告)号：US07074456B2

    公开(公告)日：2006-07-11

    申请号：US11012001

    申请日：2004-12-14

    申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    IPC分类号： B05D5/12 ,  G11B5/127

    CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

    摘要翻译： 目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。 现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。 描述本发明的五个实施例。

    Method of manufacturing integrated spin valve head
    18.
    发明授权
    Method of manufacturing integrated spin valve head 失效
    集成自旋阀头的制造方法

    公开(公告)号：US07089650B2

    公开(公告)日：2006-08-15

    申请号：US11012000

    申请日：2004-12-14

    申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    IPC分类号： G11B5/127 ,  G11B5/83 ,  H04R31/00

    CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by a manufacturing method that includes inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer.

    摘要翻译： 目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。 现在已经通过包括在自旋阀传感器的顶部或底部（或两个）侧面上插入高磁导率，高电阻率薄膜屏蔽的制造方法来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。

    Integrated spin valve head
    19.
    发明授权
    Integrated spin valve head 失效
    集成自旋阀头

    公开(公告)号：US06995959B2

    公开(公告)日：2006-02-07

    申请号：US11011957

    申请日：2004-12-14

    申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

    摘要翻译： 目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。 现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。 描述本发明的五个实施例。