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11.发明授权Method and apparatus for initializing tool controllers based on tool event data 有权基于工具事件数据初始化刀具控制器的方法和装置公开(公告)号：US07103439B1
公开(公告)日：2006-09-05
申请号：US09824301
申请日：2001-04-02
申请人： Christopher A. Bode , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Christopher A. Bode , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , Y02P90/20 , Y02P90/86
摘要： A method for initializing process controllers based on tool event data includes providing a tool having a process controller adapted to employ a control model to control an operating recipe of the tool; receiving a tool event notification; and initializing the control model in response to receiving the tool event notification. A manufacturing system includes a tool and a process controller. The tool is adapted to process wafers in accordance with an operating recipe. The process controller is adapted to employ a control model to control the operating recipe in accordance with a control algorithm. The process controller is further adapted to receive a tool event notification and initialize the control model in response to receiving the tool event notification.
摘要翻译： 用于基于工具事件数据初始化过程控制器的方法包括提供具有适于使用控制模型来控制工具的操作配方的过程控制器的工具; 接收工具事件通知; 并且响应于接收到工具事件通知来初始化控制模型。 制造系统包括工具和过程控制器。 该工具适于根据操作配方处理晶片。 过程控制器适于采用控制模型来根据控制算法来控制操作配方。 过程控制器还适于接收工具事件通知并响应于接收到工具事件通知而初始化控制模型。
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12.发明授权公开(公告)号：US06901340B1
公开(公告)日：2005-05-31
申请号：US09824348
申请日：2001-04-02
申请人： Alexander J. Pasadyn , Joyce S. Oey Hewett , Christopher A. Bode , Anthony J. Toprac , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Alexander J. Pasadyn , Joyce S. Oey Hewett , Christopher A. Bode , Anthony J. Toprac , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
CPC分类号： G05B23/0275 , G05B2219/1112 , G05B2219/34477 , G05B2223/02 , H01L21/67276 , Y02P90/86
摘要： A method for distinguishing between sources of process variation includes processing a plurality of manufactured items in a process flow; storing a set of production environment data associated with each of the manufactured items; identifying manufactured items associated with a process drift; generating a plurality of characteristic threads based on the production environment data; comparing the characteristic threads for at least those manufactured items associated with the process drift; and determining at least one potential cause for the process drift based on the comparison of the characteristic threads. A manufacturing system for distinguishing between sources of process variation is also provided. The manufacturing system includes a plurality of tools for processing manufactured items in a process flow, a database server, and a drift monitor.
摘要翻译： 用于区分过程变化源的方法包括在处理流程中处理多个制造项目; 存储与每个所制造的项目相关联的一组生产环境数据; 识别与过程漂移相关联的制品; 基于生产环境数据生成多个特征线程; 比较至少那些与过程漂移有关的制造物品的特征线; 以及基于所述特征线程的比较来确定所述过程漂移的至少一个潜在原因。 还提供了用于区分过程变化源的制造系统。 制造系统包括用于处理流程中的制造物品的多个工具，数据库服务器和漂移监视器。
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公开(公告)号：US07424392B1
公开(公告)日：2008-09-09
申请号：US10323502
申请日：2002-12-18
CPC分类号： G05B19/41875 , G05B2219/32135 , G05B2219/32182 , G05B2219/32184 , G05B2219/37224 , G05B2219/41146 , G05B2219/41147 , G05B2219/50065 , Y02P90/22
摘要： A method and an apparatus are provided for applying a self-adaptive filter to a drifting process. The method includes processing a workpiece, measuring an output characteristic of the processed workpiece and modifying a previous estimated process state based at least on the measured output characteristic. The method further includes estimating a next process state based at least on the modified previous estimated process state.
摘要翻译： 提供了一种用于将自适应滤波器应用于漂移过程的方法和装置。 该方法包括处理工件，测量被处理工件的输出特性，以及至少基于所测量的输出特性修改先前的估计过程状态。 该方法还包括至少基于修改的先前估计的处理状态来估计下一处理状态。
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公开(公告)号：US08359494B2
公开(公告)日：2013-01-22
申请号：US10323272
申请日：2002-12-18
申请人： Elfido Coss, Jr. , Ernest D. Adams, III , Robert J. Chong , Howard E. Castle , Thomas J. Sonderman , Alexander J. Pasadyn
发明人： Elfido Coss, Jr. , Ernest D. Adams, III , Robert J. Chong , Howard E. Castle , Thomas J. Sonderman , Alexander J. Pasadyn
IPC分类号： G06F11/00
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method and an apparatus are provided for parallel fault detection. The method comprises receiving data associated with processing of a workpiece by a first processing tool, receiving data associated with processing of a workpiece by a second processing tool and comparing at least a portion of the received data to a common fault model to determine if a fault associated with at least one of the processing of the workpiece by the first processing tool and processing of the workpiece by the second processing tool occurred.
摘要翻译： 提供了用于并行故障检测的方法和装置。 该方法包括接收与第一处理工具处理工件有关的数据，通过第二处理工具接收与工件的处理有关的数据，并将至少一部分接收到的数据与常见故障模型进行比较，以确定是否存在故障 与通过第一处理工具处理工件和由第二处理工具处理工件的至少一个相关联。
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15.发明授权公开(公告)号：US07117062B1
公开(公告)日：2006-10-03
申请号：US10323553
申请日：2002-12-18
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G01N21/9501 , G05B2219/31442 , G05B2219/32197 , Y02P90/22
摘要： A method and an apparatus for characterizing an uncertainty factor relating to processing workpieces. A first processing step is performed upon a workpiece. A first uncertainty factor associated with the first processing step is calculated. A final uncertainty factor associated with an end-of-line parameter relating to the workpiece is calculated based upon the first uncertainty factor. A process control function based upon the final uncertainty factor is performed.
摘要翻译： 一种表征与处理工件有关的不确定因素的方法和装置。 对工件进行第一处理步骤。 计算与第一处理步骤相关联的第一不确定因素。 基于第一不确定因素计算与与工件相关的行尾参数相关联的最终不确定性因子。 执行基于最终不确定因素的过程控制功能。
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公开(公告)号：US06978189B1
公开(公告)日：2005-12-20
申请号：US10156450
申请日：2002-05-28
CPC分类号： H01L21/67288 , H01L21/67253
摘要： A method and an apparatus for matching data related to an integrated metrology tool and a standalone metrology tool. At least one semiconductor wafer is processed. An integrated metrology tool and/or a standalone metrology tool is matched based upon a difference between metrology data relating to a processed semiconductor wafer acquired by the integrated metrology tool and metrology data acquired by the standalone metrology tool, using a controller.
摘要翻译： 一种用于匹配与综合计量工具相关的数据的方法和装置以及独立计量工具。 至少一个半导体晶片被处理。 基于与由综合计量工具获得的经处理的半导体晶片相关的度量数据与使用控制器由独立计量工具获取的度量数据之间的差异进行匹配的综合计量工具和/或独立计量工具。
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17.发明授权Method and apparatus using integrated metrology data for pre-process and post-process control 有权使用集成度量数据进行预处理和后处理控制的方法和装置公开(公告)号：US06788988B1
公开(公告)日：2004-09-07
申请号：US10023098
申请日：2001-12-17
IPC分类号： G06F1900
CPC分类号： G05B15/02 , H01L22/20 , H01L2223/54453
摘要： A method and an apparatus for acquiring pre-process and post-process integrated metrology data. A lot of semiconductor wafers is provided. A pre-process integrated metrology data acquisition from a first semiconductor wafer within the lot of semiconductor wafers is performed. A process operation on the first semiconductor wafer is performed at least partially during the process of acquiring pre-process metrology data from a second semiconductor wafer within the lot of semiconductor wafers. Post-process integrated metrology data is acquired from the first semiconductor wafer in response to processing of the first semiconductor wafer. The pre-process and the post-process metrology data is analyzed for evaluation of the process operation performed on the first semiconductor wafer.
摘要翻译： 一种用于获取预处理和后处理综合度量数据的方法和装置。 提供了许多半导体晶片。 执行在许多半导体晶片内的第一半导体晶片的预处理集成度量数据采集。 在从多个半导体晶片的第二半导体晶片获取预处理测量数据的过程中，至少部分地执行在第一半导体晶片上的处理操作。 响应于第一半导体晶片的处理，从第一半导体晶片获取后处理集成度量数据。 分析预处理和后处理计量数据以评估在第一半导体晶片上执行的处理操作。
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公开(公告)号：US06756243B2
公开(公告)日：2004-06-29
申请号：US10020551
申请日：2001-10-30
IPC分类号： H01L2166
CPC分类号： H01L22/20 , H01L2223/54453 , Y10T29/41
摘要： A method and an apparatus for performing cascade control of processing of semiconductor wafers. A first semiconductor wafer for processing is received. A second semiconductor wafer for processing is received. A cascade processing operation upon the first and the second semiconductor wafers is performed, wherein the cascade processing operation comprises acquiring pre-process metrology data related to the second semiconductor wafer during at least a portion of a time period wherein the first semiconductor wafer is being processed.
摘要翻译： 一种用于对半导体晶片的处理进行级联控制的方法和装置。 接收用于处理的第一半导体晶片。 接收用于处理的第二半导体晶片。 执行在第一和第二半导体晶片上的级联处理操作，其中级联处理操作包括在其中正在处理第一半导体晶片的时间段的至少一部分期间获取与第二半导体晶片相关的预处理测量数据 。
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19.发明授权Dynamic process state adjustment of a processing tool to reduce non-uniformity 有权动态过程状态调整的加工工具减少不均匀性公开(公告)号：US06751518B1
公开(公告)日：2004-06-15
申请号：US10134244
申请日：2002-04-29
IPC分类号： G06F1900
CPC分类号： H01L21/67276
摘要： A method and an apparatus for reducing process non-uniformity across a processed semiconductor wafers. A first semiconductor wafer is processed. A process non-uniformity associated with the first processed semiconductor wafer is identified. A feedback correction in response to the process non-uniformity during processing of a second semiconductor wafer is performed and/or a feed-forward compensation is performed in response to the process non-uniformity during a subsequent process performed across the first semiconductor wafer is performed.
摘要翻译： 一种用于减少经处理的半导体晶片的工艺不均匀性的方法和装置。 处理第一半导体晶片。 识别与第一处理的半导体晶片相关联的工艺不均匀。 执行响应于处理第二半导体晶片期间的处理不均匀性的反馈校正和/或响应于在第一半导体晶片执行的后续处理期间的处理不均匀性执行前馈补偿 。
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20.发明授权Method of varying stepper exposure dose to compensate for across-wafer variations in photoresist thickness 失效改变步进曝光剂量以补偿光致抗蚀剂厚度的跨晶片变化的方法公开(公告)号：US06576385B2
公开(公告)日：2003-06-10
申请号：US09776206
申请日：2001-02-02
IPC分类号： G03F900
CPC分类号： G03F7/70558
摘要： A method of compensating for across-wafer variations in photoresist thickness is provided. The method comprises providing a wafer having a process layer formed there-above, forming a layer of photoresist above the process layer, measuring a thickness of the layer of photoresist at a plurality of locations to result in a plurality of thickness measurements, providing the thickness measurements to a controller that determines, based upon the thickness measurements, an exposure dose of an exposure process to be performed on the layer of photoresist, and performing the exposure process on the layer of photoresist using the determined exposure dose. This exposure dose may be varied on a flash-by-flash basis as the stepper tool “steps” across the surface of wafers. That is, the exposure dose for a group of flashes, or for each flash, may be varied in response to the thickness measurements.
摘要翻译： 提供了补偿光致抗蚀剂厚度的跨晶片变化的方法。 该方法包括提供具有在其上形成的处理层的晶片，在处理层上方形成光致抗蚀剂层，测量多个位置处的光致抗蚀剂层的厚度，以产生多个厚度测量值，从而提供厚度 控制器的测量，其基于厚度测量确定将在光致抗蚀剂层上进行的曝光处理的曝光剂量，以及使用确定的曝光剂量对光致抗蚀剂层进行曝光处理。 当步进工具跨越晶片表面“步进”时，该曝光剂量可以在逐闪的基础上变化。 也就是说，一组闪光或每个闪光灯的曝光剂量可以响应于厚度测量而变化。
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