公开(公告)号：US20080203452A1

公开(公告)日：2008-08-28

申请号：US12037691

申请日：2008-02-26

申请人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

发明人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

摘要翻译： 具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。 布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。 支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。

公开(公告)号：US20080131588A1

公开(公告)日：2008-06-05

申请号：US11987607

申请日：2007-12-03

申请人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon ,  Doo-Won Kwon

发明人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon ,  Doo-Won Kwon

IPC分类号： B05D5/12

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02165

摘要： A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.

摘要翻译： 背照式图像传感器可以包括其中设置有光电二极管的基板; 在所述基板的第一表面上的绝缘层; 绝缘层中的互连层; 在所述基板和所述绝缘层之间的抗反射层; 在所述基板的与所述第一表面相对的第二表面上的多个滤色器; 和滤色片上的微透镜。 因为防反射层可以在基板和层间电介质层之间，所以可以减少穿过基板并到达基板与层间绝缘层之间的界面的光的反射率。

公开(公告)号：US20140264695A1

公开(公告)日：2014-09-18

申请号：US14212045

申请日：2014-03-14

申请人： Yun-Ki Lee ,  Chang-Rok Moon ,  Duck-Hyung Lee

发明人： Yun-Ki Lee ,  Chang-Rok Moon ,  Duck-Hyung Lee

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14601 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

摘要： An image sensor includes a semiconductor layer having a first surface and a second surface opposite to each other and including a photodiode and a hydrogen containing region adjacent the first surface. A crystalline anti-reflective layer is on the first surface of the semiconductor layer, and is configured to allow hydrogen atoms to penetrate into the first surface of the semiconductor layer. Driving transistors and wires are on the second surface of the semiconductor layer, and a color filter and a micro lens are on the anti-reflective layer. The hydrogen containing region contains hydrogen atoms that combine with defects at the first surface.

摘要翻译： 图像传感器包括具有彼此相对的第一表面和第二表面的半导体层，并且包括光电二极管和与第一表面相邻的含氢区域。 晶体抗反射层位于半导体层的第一表面上，并且被配置为允许氢原子穿透到半导体层的第一表面。 驱动晶体管和导线位于半导体层的第二表面上，滤色器和微透镜位于抗反射层上。 含氢区含有与第一表面的缺陷结合的氢原子。

公开(公告)号：US08633557B2

公开(公告)日：2014-01-21

申请号：US13599960

申请日：2012-08-30

申请人： Sang-Hoon Kim ,  Chang-Rok Moon

发明人： Sang-Hoon Kim ,  Chang-Rok Moon

IPC分类号： H01L31/0232

CPC分类号： H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

摘要： Image sensors include a first insulation interlayer structure on a first surface of a substrate and having a multi-layered structure. A first wiring structure is in the first insulation interlayer structure. A via contact plug extends from a second surface of the substrate and penetrates the substrate to be electrically connected to the first wiring structure. Color filters and micro lenses are stacked on the second surface in a first region of the substrate. A second insulation interlayer structure is on the second surface in a second region of the substrate. A second wiring structure is in the second insulation interlayer structure to be electrically connected to the via contact plug. A pad pattern is electrically connected to the second wiring structure and having an upper surface through which an external electrical signal is applied. Photodiodes are between the first and second wiring structures in the first region.

摘要翻译： 图像传感器包括在基板的第一表面上的具有多层结构的第一绝缘夹层结构。 第一布线结构处于第一绝缘夹层结构中。 通孔接触插塞从基板的第二表面延伸并穿透基板以电连接到第一布线结构。 彩色滤光器和微透镜在衬底的第一区域中的第二表面上堆叠。 第二绝缘层间结构位于衬底的第二区域中的第二表面上。 第二布线结构在第二绝缘层间结构中，以电连接到通孔接触插塞。 焊盘图案电连接到第二布线结构，并且具有施加外部电信号的上表面。 光电二极管位于第一区域中的第一和第二布线结构之间。

公开(公告)号：US08164126B2

公开(公告)日：2012-04-24

申请号：US12037691

申请日：2008-02-26

申请人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

发明人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

IPC分类号： H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

摘要翻译： 具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。 布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。 支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。

公开(公告)号：US20120077301A1

公开(公告)日：2012-03-29

申请号：US13239457

申请日：2011-09-22

申请人： Yu-Jin Ahn ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Chang-Rok Moon ,  Sang-Jun Choi ,  Eun-Kyung Park

发明人： Yu-Jin Ahn ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Chang-Rok Moon ,  Sang-Jun Choi ,  Eun-Kyung Park

IPC分类号： H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1463

摘要： An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.

摘要翻译： 提供了一种用于制造图像传感器的图像传感器和方法。 制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层，填充所述沟槽，所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案，所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理，以在所述沟槽的底部形成第一类型的势垒区域。

公开(公告)号：US20080308852A1

公开(公告)日：2008-12-18

申请号：US12139022

申请日：2008-06-13

申请人： Seok-Ha Lee ,  Chang-Rok Moon ,  Kang-Bok Lee

发明人： Seok-Ha Lee ,  Chang-Rok Moon ,  Kang-Bok Lee

IPC分类号： H01L31/113

CPC分类号： H01L27/14643 ,  H01L27/14641 ,  H04N5/3575 ,  H04N5/3741 ,  H04N5/37457 ,  H04N5/378

摘要： An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.

摘要翻译： 图像传感器可以包括以矩阵形式布置的多个光电转换元件。 多个浮动扩散区域可由相应的相应光电转换元件对共享。 多个电荷传输晶体管可以分别对应于光电转换元件，其中每个电荷传输晶体管连接在多个光电转换元件中的相应一个光电转换元件和多个浮动扩散区域中相应的一个之间。 多个电荷传输线可以共同地连接到相应的相应的一对电荷传输晶体管的栅极，其中各个相应的电荷传输晶体管对中的每一对可以连接到多个电荷传输晶体管中的相应行 的不同相邻行的浮动扩散区域中的光电转换元件。

公开(公告)号：US20080128845A1

公开(公告)日：2008-06-05

申请号：US11999227

申请日：2007-12-04

申请人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon

发明人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon

IPC分类号： H01L31/0232

CPC分类号： H01L27/14625 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02165 ,  H01L31/02327

摘要： Provided are an image sensor and a method of forming the image sensor. The image sensor has a base multi-layered reflection layer interposed between a photodiode and an interlayer insulating layer. The photodiode has a first surface adjacent to the interlayer insulating layer and a second surface opposite the first surface. Here, external light is incident on the second surface of the photodiode. Also, the image sensor includes a sidewall multi-layered reflection layer that encloses the photodiode.

摘要翻译： 提供了一种图像传感器和形成图像传感器的方法。 图像传感器具有介于光电二极管和层间绝缘层之间的基底多层反射层。 光电二极管具有与层间绝缘层相邻的第一表面和与第一表面相对的第二表面。 这里，外部光入射到光电二极管的第二表面上。 此外，图像传感器包括围绕光电二极管的侧壁多层反射层。

公开(公告)号：US20080070166A1

公开(公告)日：2008-03-20

申请号：US11898662

申请日：2007-09-14

申请人： Byung-Jun Park ,  Chang-Rok Moon ,  Yun-Ki Lee

发明人： Byung-Jun Park ,  Chang-Rok Moon ,  Yun-Ki Lee

IPC分类号： G03C5/00 ,  G06K9/20

CPC分类号： H01L27/14627 ,  H01L27/14685

摘要： One example embodiment may include an image sensor including a substrate, and a plurality of microlenses formed on the substrate. Each of the microlenses may include a base lens and a crosslinked overcoating film on a surface of the base lens.

摘要翻译： 一个示例实施例可以包括图像传感器，其包括衬底和形成在衬底上的多个微透镜。 每个微透镜可以在基底透镜的表面上包括基底透镜和交联的外涂膜。

公开(公告)号：US10033974B2

公开(公告)日：2018-07-24

申请号：US14797656

申请日：2015-07-13

申请人： Ha-Kyu Choi ,  Chang-Rok Moon ,  June-Taeg Lee ,  Hyung-Jun Kim

发明人： Ha-Kyu Choi ,  Chang-Rok Moon ,  June-Taeg Lee ,  Hyung-Jun Kim

IPC分类号： G02B5/20 ,  H01L27/146 ,  H04N9/04

摘要： An electronic device is provided. The electronic device includes a first inorganic color filter including a first surface on which light is incident and a second surface opposite the first surface; and a first organic color filter disposed on the first surface of the first inorganic color filter.