公开(公告)号：US20100102385A1

公开(公告)日：2010-04-29

申请号：US12652970

申请日：2010-01-06

申请人： Jin-Woo Lee ,  Tae-Young Chung ,  Sung-Hee Han

发明人： Jin-Woo Lee ,  Tae-Young Chung ,  Sung-Hee Han

IPC分类号： H01L29/78

CPC分类号： H01L29/78 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66621

摘要： Semiconductor devices including an isolation layer on a semiconductor substrate are provided. The isolation layer defines an active region of the semiconductor substrate. The device further includes an upper gate electrode crossing over the active region and extending to the isolation layer and lower active gate electrode. The lower active gate electrode includes a first active gate electrode extending from the upper gate electrode to the active region and a second active gate electrode below the first active gate electrode and having a greater width than a width of the first active gate electrode. The device further includes a lower field gate electrode that extends from the upper gate electrode to the isolation layer and has a bottom surface that is at a lower level than a bottom surface of the active gate electrode such that the sidewalls of the active region are covered below the lower active gate electrode. Related methods of fabricating semiconductor devices are also provided herein.

摘要翻译： 提供包括半导体衬底上的隔离层的半导体器件。 隔离层限定半导体衬底的有源区。 该器件还包括与有源区交叉并延伸到隔离层和下活性栅电极的上栅电极。 下有源栅电极包括从上栅极延伸到有源区的第一有源栅电极和位于第一有源栅电极下方并且具有比第一有源栅电极的宽度更大的宽度的第二有源栅电极。 该器件还包括一个从上部栅电极延伸到隔离层的下部栅极电极，并且具有一底部表面，该底表面处于与该有源栅极电极的底表面相比较低的位置，使得该有源区域的侧壁被覆盖 在下部有源栅电极下方。 本文还提供了制造半导体器件的相关方法。

公开(公告)号：US07602043B2

公开(公告)日：2009-10-13

申请号：US11461344

申请日：2006-07-31

申请人： Eun-Cheol Lee ,  Won-Suk Yang ,  Jin-Woo Lee ,  Tae-Young Chung

发明人： Eun-Cheol Lee ,  Won-Suk Yang ,  Jin-Woo Lee ,  Tae-Young Chung

IPC分类号： H01L27/06 ,  H01L27/08

CPC分类号： H01L28/91 ,  G11C11/4091

摘要： A coupling capacitor and a semiconductor memory device using the same are provided. In an embodiment, each memory cell of the semiconductor memory device includes a coupling capacitor so that a storage capacitor can store at least 2 bits of data. The coupling capacitor has a capacitance having a predetermined ratio with respect to the capacitance of the storage capacitor. For this, the coupling capacitor is formed by substantially the same fabrication process as the storage capacitor. The predetermined ratio is obtained by choosing an appropriate number of individual capacitors, each with the same capacitance of the storage capacitor, to comprise the coupling capacitor. Also, the coupling capacitor is disposed on an interlayer insulating layer that buries a bit line in a cell region and a sense amplifier in a sense amplifier region.

摘要翻译： 提供耦合电容器和使用该耦合电容器的半导体存储器件。 在一个实施例中，半导体存储器件的每个存储单元包括耦合电容器，使得存储电容器可以存储至少2位的数据。 耦合电容器具有相对于存储电容器的电容具有预定比率的电容。 为此，耦合电容器通过与存储电容器基本上相同的制造工艺来形成。 通过选择适当数量的各个具有相同电容的存储电容器的单个电容器来获得预定比率，以包括耦合电容器。 此外，耦合电容器设置在掩埋单元区域中的位线和读出放大器区域中的读出放大器的层间绝缘层上。

公开(公告)号：US20090152625A1

公开(公告)日：2009-06-18

申请号：US12314582

申请日：2008-12-12

申请人： Jin-Woo Lee ,  Tae-Young Chung ,  Joo-Young Lee

发明人： Jin-Woo Lee ,  Tae-Young Chung ,  Joo-Young Lee

IPC分类号： H01L29/78

CPC分类号： H01L29/66621 ,  H01L21/26513 ,  H01L21/823412 ,  H01L21/823437 ,  H01L29/1037 ,  H01L29/105 ,  H01L29/4236

摘要： A recessed channel transistor includes a single crystalline silicon substrate having a recessed portion, a bottom surface of the recessed portion including an elevated central portion, a channel doping region in the single crystalline silicon substrate, the channel doping region being under the bottom surface of the recessed portion, a gate structure in the recessed portion, and source/drain regions in the single crystalline silicon substrate at both sides of the recessed portion, the source/drain regions being spaced apart from the bottom surface of the recessed portion.

摘要翻译： 凹陷沟道晶体管包括具有凹陷部分的单晶硅衬底，凹部的底表面包括升高的中心部分，在单晶硅衬底中的沟道掺杂区域，沟道掺杂区域位于 凹陷部分，凹陷部分中的栅极结构以及在凹陷部分两侧的单晶硅衬底中的源极/漏极区域，源极/漏极区域与凹陷部分的底表面间隔开。

公开(公告)号：US20090127609A1

公开(公告)日：2009-05-21

申请号：US12232020

申请日：2008-09-10

申请人： Sung-Hee Han ,  Jin-Woo Lee ,  Tae-Young Chung ,  Ja-Young Lee

发明人： Sung-Hee Han ,  Jin-Woo Lee ,  Tae-Young Chung ,  Ja-Young Lee

IPC分类号： H01L29/78 ,  H01L21/3205

CPC分类号： H01L21/3247 ,  H01L29/1037 ,  H01L29/42376 ,  H01L29/66553 ,  H01L29/66621 ,  H01L29/78

摘要： Provided are a method of fabricating a recess channel transistor and a related semiconductor device. The method may include forming a first gate trench on a substrate, forming a dielectric spacer on a sidewall of the first gate trench, forming a second gate trench on the substrate under the first gate trench, and forming a gate electrode to fill the trenches. The dielectric spacer may remain between the gate electrode and the substrate.

摘要翻译： 提供一种制造凹槽通道晶体管和相关半导体器件的方法。 该方法可以包括在衬底上形成第一栅极沟槽，在第一栅极沟槽的侧壁上形成电介质间隔物，在第一栅极沟槽下面的衬底上形成第二栅极沟槽，以及形成栅电极以填充沟槽。 电介质隔离物可以保留在栅电极和衬底之间。

公开(公告)号：US20080169493A1

公开(公告)日：2008-07-17

申请号：US11809252

申请日：2007-05-31

申请人： Jin-Woo Lee ,  Tae-Young Chung

发明人： Jin-Woo Lee ,  Tae-Young Chung

IPC分类号： H01L27/108 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L21/2652 ,  H01L21/2658 ,  H01L27/10876 ,  H01L29/1041 ,  H01L29/42376 ,  H01L29/66621

摘要： Semiconductor devices include an active region defined in a semiconductor substrate having first type impurity ions. A retrograde region is in the active region and has second type impurity ions. An upper channel region is on the retrograde region in the active region and has the first type impurity ions. Source and drain regions are on the upper channel region in the active region and spaced apart from each other. A gate electrode fills a gate trench formed in the active region. The gate electrode is disposed between the source and drain regions and extends into the retrograde region through the upper channel region. DRAM devices and methods are also provided.

摘要翻译： 半导体器件包括限定在具有第一类型杂质离子的半导体衬底中的有源区。 逆行区位于有源区并具有第二类杂质离子。 上通道区域在有源区域的逆行区域上，并具有第一类杂质离子。 源极和漏极区域在有源区域中的上部沟道区域上并且彼此间隔开。 栅电极填充形成在有源区中的栅极沟槽。 栅电极设置在源区和漏区之间，并通过上沟道区延伸到逆行区。 还提供DRAM装置和方法。

公开(公告)号：US09468117B2

公开(公告)日：2016-10-11

申请号：US14780716

申请日：2013-12-17

申请人： Jin-Woo Lee

发明人： Jin-Woo Lee

IPC分类号： G06F1/16 ,  H05K5/02 ,  H01R27/00 ,  H05K5/00 ,  H01R24/62

CPC分类号： H05K5/0278 ,  G06F1/1684 ,  H01R24/62 ,  H01R27/00 ,  H05K5/0004 ,  H05K5/0247

摘要： A memory device having heterogeneous terminals easily connects the memory device to a computer or a portable terminal without a specific gender. When a memory unit is connected to a computer, the memory unit slides out of the body and the first terminal of the memory unit is inserted into a USB connector of the computer, and when the memory unit is connected to a portable terminal, the connection unit slides out of the body and the second terminal of the connection unit is inserted in a mini-USB connector of the portable terminal, so it is possible to easily connect the memory unit to the portable terminal without a specific gender.

摘要翻译： 具有异构终端的存储设备容易地将存储设备连接到计算机或便携式终端而不具有特定的性别。 当存储器单元连接到计算机时，存储器单元从主体滑出并且存储器单元的第一端插入到计算机的USB连接器中，并且当存储器单元连接到便携式终端时，连接 单元从主体滑出并且连接单元的第二端子插入便携式终端的mini-USB连接器中，因此可以容易地将存储器单元连接到便携式终端而没有特定的性别。

公开(公告)号：US09168924B2

公开(公告)日：2015-10-27

申请号：US13430258

申请日：2012-03-26

申请人： Jin-Woo Lee ,  Bakhtiar Brian Litkouhi

发明人： Jin-Woo Lee ,  Bakhtiar Brian Litkouhi

IPC分类号： B62D6/00 ,  G06F7/00 ,  B60W30/12 ,  B60W50/04 ,  B62D15/02

CPC分类号： B60W30/12 ,  B60W50/04 ,  B60W2540/18 ,  B62D15/025

摘要： A lane controller system installed on a vehicle may include components for self-diagnosing malfunctions on the vehicle. The system may include a desired path generator for generating a desired path that keeps the vehicle within a road lane; a steering controller for providing steering a steering correction to keep the vehicle within the road lane; a vehicle state estimator for estimating the state of the vehicle; a lane marking detector for detecting position of road lane markings; a path predictor for predicting a path actively followed by the vehicle; a virtual dynamics module for modeling the anticipated path of the vehicle following input of the steering controller; a comparer that compares the results of actual steering corrections applied with those predicted by the virtual dynamics module, and a diagnostic system that determines a root cause of malfunctions, based on the comparison by the comparer.

摘要翻译： 安装在车辆上的车道控制器系统可以包括用于自行诊断车辆故障的部件。 系统可以包括用于产生将车辆保持在道路车道内的期望路径的期望的路径发生器; 转向控制器，用于提供转向转向校正以将车辆保持在道路车道内; 用于估计车辆状态的车辆状态估计器; 用于检测道路车道标记的位置的车道标记检测器; 用于预测车辆主动跟踪的路径的路径预测器; 虚拟动力学模块，用于对转向控制器的输入之后的车辆的预期路径进行建模; 比较应用于虚拟动力学模块预测的实际转向校正的结果的比较器，以及基于比较器的比较确定故障根本原因的诊断系统。

公开(公告)号：US08977419B2

公开(公告)日：2015-03-10

申请号：US12977912

申请日：2010-12-23

申请人： Jin-Woo Lee ,  Bakhtiar Brian Litkouhi

发明人： Jin-Woo Lee ,  Bakhtiar Brian Litkouhi

IPC分类号： B62D6/00 ,  B62D15/00 ,  B60W30/12 ,  B60W50/08 ,  B62D1/28 ,  B60W50/00

CPC分类号： B60W30/12 ,  B60W50/08 ,  B60W2050/0073 ,  B60W2050/0074 ,  B60W2540/04 ,  B62D1/28 ,  B62D1/286

摘要： A system and method for providing adaptive lane centering in an autonomous or semi-autonomous vehicle driving system includes activating a lane centering control system, detecting a driver steering override of the lane centering control system, monitoring a lane centering offset when a driver override condition is detected, determining if the lane centering offset represents a driver bias and adjusting the lane centering offset in the lane centering control system to compensate for the driver bias.

摘要翻译： 一种用于在自主或半自主车辆驾驶系统中提供自适应车道对中的系统和方法包括激活车道对中控制系统，检测车道居中控制系统的驾驶员转向超控，当驾驶员超驰条件为 检测到，确定车道中心偏移是否表示驾驶员偏差并且调整车道居中控制系统中的车道对中偏移以补偿驾驶员偏差。

公开(公告)号：US08846421B2

公开(公告)日：2014-09-30

申请号：US13416202

申请日：2012-03-09

申请人： Jin-Woo Lee ,  Jae-Hoon Jang ,  Dong-Hoon Lee ,  Jae-Ha Kim

发明人： Jin-Woo Lee ,  Jae-Hoon Jang ,  Dong-Hoon Lee ,  Jae-Ha Kim

IPC分类号： H01L21/00 ,  H01L33/62 ,  H01L33/60

CPC分类号： H01L33/62 ,  H01L33/60 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0066 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method of manufacturing a lead frame for a light-emitting device package and a light-emitting device package are provided. The method of manufacturing a lead frame for a light-emitting device package includes: preparing a base substrate for the lead frame; forming diffusion roughness on the base substrate; and forming a reflective plating layer on the diffusion roughness formed base substrate.

摘要翻译： 提供一种制造发光器件封装引线框和发光器件封装的方法。 制造发光器件封装的引线框架的方法包括：准备用于引线框架的基底基板; 在基底基板上形成扩散粗糙度; 在扩散粗糙化基底上形成反射镀层。

公开(公告)号：US08778152B2

公开(公告)日：2014-07-15

申请号：US13376720

申请日：2010-04-30

申请人： Jin-Woo Lee ,  Jae-Kyu Choi ,  Tae-Hun Kim ,  Young-Il Yoon

发明人： Jin-Woo Lee ,  Jae-Kyu Choi ,  Tae-Hun Kim ,  Young-Il Yoon

IPC分类号： G01N27/327 ,  G01N33/66

CPC分类号： G01N27/3272

摘要： The present invention relates to a sensor used together with a detector to measure biomaterial, and to an apparatus using same. A sensor of the present invention comprises: a body portion with a three-dimensional shape, having a biomaterial introduction hole, and attachable and detachable to/from a detector; a sensor portion with a plurality of reaction electrodes formed on one surface thereof, and a plurality of transfer electrodes formed on the other surface thereof; and an analyzer reagent fixed above the reaction electrodes. The sensor portion, together with the body portion, forms a reaction chamber connected to the biomaterial introduction hole, and is attached to the body portion such that the reaction electrodes are oriented toward the reaction chamber. According to the present invention, attachment and detachment is easy, even for the elderly, and the contamination of the sensor can be minimized.

摘要翻译： 本发明涉及与用于测量生物材料的检测器一起使用的传感器以及使用该传感器的装置。 本发明的传感器包括：具有三维形状的身体部分，具有生物材料引入孔，并且可以从检测器附接和拆卸; 具有形成在其一个表面上的多个反应电极的传感器部分和形成在其另一个表面上的多个转移电极; 以及固定在反应电极上方的分析器。 传感器部分与主体部分一起形成连接到生物材料导入孔的反应室，并且附接到主体部分，使得反应电极朝向反应室。 根据本发明，即使对于老年人而言，安装和拆卸容易，并且可以最小化传感器的污染。