公开(公告)号：US20050062111A1

公开(公告)日：2005-03-24

申请号：US10960735

申请日：2004-10-07

Applicant: Michael Maldei ,  Jinhwan Lee ,  Guenter Gerstmeier ,  Brian Cousineau ,  Jon Berry ,  Steven Baker ,  Malati Hedge

Inventor： Michael Maldei ,  Jinhwan Lee ,  Guenter Gerstmeier ,  Brian Cousineau ,  Jon Berry ,  Steven Baker ,  Malati Hedge

IPC: H01L21/318 ,  H01L21/8239 ,  H01L21/8242 ,  H01L27/105 ,  H01L27/148 ,  H01L29/76

CPC classification number: H01L27/1052 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10891 ,  H01L27/10894

Abstract: A process for fabricating a semiconductor structure, wherein the semiconductor structure includes a core region and a periphery region. The core region includes a plurality of transistors and the periphery region includes a plurality of transistors. The process includes depositing a middle-of-line liner using plasma enhanced chemical vapor deposition overlying the semiconductor structure. By using a plasma enhanced chemical vapor deposition the amount of MOL liner deposited in the core region and the periphery region can be controlled depending on the distances between transistors in the core region and periphery region.

Abstract translation: 一种制造半导体结构的方法，其中半导体结构包括芯区域和周边区域。 芯区域包括多个晶体管，并且周边区域包括多个晶体管。 该方法包括使用覆盖半导体结构的等离子体增强化学气相沉积来沉积中间线衬里。 通过使用等离子体增强化学气相沉积，可以根据核心区域和外围区域中的晶体管之间的距离来控制沉积在芯区域和外围区域中的MOL衬垫的量。

公开(公告)号：US07583696B2

公开(公告)日：2009-09-01

申请号：US10286315

申请日：2002-11-01

Applicant: Byungjun Bae ,  Joon-Young Choi ,  Jinhwan Lee ,  Young-Kwon Hahm ,  Chieteuk Ahn

Inventor： Byungjun Bae ,  Joon-Young Choi ,  Jinhwan Lee ,  Young-Kwon Hahm ,  Chieteuk Ahn

IPC: H04J3/00

CPC classification number: H04N21/23608 ,  H04N21/235 ,  H04N21/2362 ,  H04N21/2365 ,  H04N21/435

Abstract: A digital broadcast protocol conversion system including: a PSIP/PSI extractor for demultiplexing a transport stream of an ATSC broadcast standard to extract PSIP/PSI data; an SI/PSI extractor for demultiplexing a transport stream of a DVB broadcast standard to extract SI/PSI data; a protocol converter for converting the PSIP/PSI data to SI′/PSI′ data corresponding to a broadcast protocol of the DVB broadcast standard or converting the SI/PSI data to PSIP′/PSI′ data corresponding to a broadcast protocol of the ATSC broadcast standard; and a multiplexer for multiplexing the SI′/PSI′ data and the transport stream having the PSIP/PSI data extracted therefrom, or multiplexing the PSIP′/PSI′ data and the transport stream having the PSIP/PSI data extracted therefrom, thereby converting the broadcast protocol between different broadcast standards.

Abstract translation: 一种数字广播协议转换系统，包括：PSIP / PSI提取器，用于解复用ATSC广播标准的传输流以提取PSIP / PSI数据; 用于解复用DVB广播标准的传输流以提取SI / PSI数据的SI / PSI提取器; 用于将PSIP / PSI数据转换为与DVB广播标准的广播协议相对应的SI'/ PSI'数据的协议转换器，或将SI / PSI数据转换为对应于ATSC广播的广播协议的PSIP'/ PSI'数据 标准; 以及用于复用SI'/ PSI'数据和从其提取的PSIP / PSI数据的传输流的多路复用器，或者复用PSIP'/ PSI'数据和从其提取的具有PSIP / PSI数据的传输流，从而将 广播协议在不同的广播标准之间。

公开(公告)号：US07177357B2

公开(公告)日：2007-02-13

申请号：US10404608

申请日：2003-04-01

Applicant: Kugjin Yun ,  Sukhee Cho ,  Yunjung Choi ,  Jinhwan Lee ,  Youngkwon Hahm ,  Chieteuk Ahn

Inventor： Kugjin Yun ,  Sukhee Cho ,  Yunjung Choi ,  Jinhwan Lee ,  Youngkwon Hahm ,  Chieteuk Ahn

IPC: H04N7/12 ,  H04J3/04

CPC classification number: H04N21/435 ,  H04N13/161 ,  H04N19/597 ,  H04N21/234318 ,  H04N21/235 ,  H04N21/4307 ,  H04N21/4347 ,  H04N21/44012

Abstract: A data processing system and method for stereoscopic 3D video based on MPEG-4. Various elementary streams of left and right images of stereoscopic 3D video are multiplexed into a single stream, and efficient buffer management is performed through field encoding that supports possible display methods. The system minimizes the synchronization time of left and right images and reduces the complexity of the decoder model. Also, a decoding buffer size is allocated to enable support of stereoscopic 3D video field/frame shuttering and stereoscopic 3D video polarized display, while maintaining compatibility with conventional 2D video data processing. Finally, only DTS and CTS are transmitted at the same time, and DTS and CTS of the remaining times are estimated to thereby simplify synchronization.

Abstract translation: 一种基于MPEG-4的立体3D视频数据处理系统和方法。 立体3D视频的左右图像的各种基本流被多路复用为单个流，并且通过支持可能的显示方法的场编码来执行有效的缓冲器管理。 该系统最小化了左右图像的同步时间，并降低了解码器模型的复杂度。 此外，分配解码缓冲器大小以支持立体3D视频场/帧快门和立体3D视频偏振显示，同时保持与常规2D视频数据处理的兼容性。 最后，只同时发送DTS和CTS，估计剩余时间的DTS和CTS，从而简化同步。

公开(公告)号：US07163891B2

公开(公告)日：2007-01-16

申请号：US11003592

申请日：2004-12-03

Applicant: Michael Maldei ,  Brian Cousineau ,  Guenter Gerstmeier ,  Jon S. Berry, II ,  Steven M. Baker ,  Jinhwan Lee

Inventor： Michael Maldei ,  Brian Cousineau ,  Guenter Gerstmeier ,  Jon S. Berry, II ,  Steven M. Baker ,  Jinhwan Lee

IPC: H01L21/768

CPC classification number: H01L27/10894 ,  H01L27/10873

Abstract: A dynamic random access memory (DRAM) structure having a distance less than 0.14 um between the contacts to silicon and the gate conductor is disclosed. In addition a method for forming the structure is disclosed, which includes forming the DRAM array contacts and the contacts to silicon simultaneously.

Abstract translation: 公开了一种在硅与栅极导体之间​​的距离小于0.14μm的动态随机存取存储器（DRAM）结构。 此外，公开了一种用于形成结构的方法，其包括同时形成DRAM阵列触点和与硅的触点。

公开(公告)号：US20050130352A1

公开(公告)日：2005-06-16

申请号：US11003592

申请日：2004-12-03

Applicant: Michael Maldei ,  Brian Cousineau ,  Guenter Gerstmeier ,  Jon Berry ,  Steven Baker ,  Jinhwan Lee

Inventor： Michael Maldei ,  Brian Cousineau ,  Guenter Gerstmeier ,  Jon Berry ,  Steven Baker ,  Jinhwan Lee

IPC: H01L21/336 ,  H01L21/82 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/10 ,  H01L29/40 ,  H01L29/739 ,  H01L29/76 ,  H01L29/78

CPC classification number: H01L27/10894 ,  H01L27/10873

Abstract: A dynamic random access memory (DRAM) structure having a distance less than 0.14 um between the contacts to silicon and the gate conductor is disclosed. In addition a method for forming the structure is disclosed, which includes forming the DRAM array contacts and the contacts to silicon simultaneously.

Abstract translation: 公开了一种在硅与栅极导体之间​​的距离小于0.14μm的动态随机存取存储器（DRAM）结构。 此外，公开了一种用于形成结构的方法，其包括同时形成DRAM阵列触点和与硅的触点。

公开(公告)号：US06822301B2

公开(公告)日：2004-11-23

申请号：US10210132

申请日：2002-07-31

Applicant: Michael Maldei ,  Jinhwan Lee ,  Guenter Gerstmeier ,  Brian Cousineau ,  Jon S. Berry, II ,  Steven M. Baker ,  Malati Hedge

Inventor： Michael Maldei ,  Jinhwan Lee ,  Guenter Gerstmeier ,  Brian Cousineau ,  Jon S. Berry, II ,  Steven M. Baker ,  Malati Hedge

IPC: H01L2976

CPC classification number: H01L27/1052 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10891 ,  H01L27/10894

Abstract: A process for fabricating a semiconductor structure, wherein the semiconductor structure includes a core region and a periphery region. The core region includes a plurality of transistors and the periphery region includes a plurality of transistors. The process includes depositing a middle-of-line liner using plasma enhanced chemical vapor deposition overlying the semiconductor structure. By using a plasma enhanced chemical vapor deposition the amount of MOL liner deposited in the core region and the periphery region can be controlled depending on the distances between transistors in the core region and periphery region.

Abstract translation: 一种制造半导体结构的方法，其中半导体结构包括芯区域和周边区域。 芯区域包括多个晶体管，并且周边区域包括多个晶体管。 该方法包括使用覆盖半导体结构的等离子体增强化学气相沉积来沉积中间线衬里。 通过使用等离子体增强化学气相沉积，可以根据核心区域和外围区域中的晶体管之间的距离来控制沉积在芯区域和外围区域中的MOL衬垫的量。