公开(公告)号：US07821553B2

公开(公告)日：2010-10-26

申请号：US11275417

申请日：2005-12-30

Applicant: John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Alain Loiseau ,  Richard J. Rassel

Inventor： John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Alain Loiseau ,  Richard J. Rassel

IPC: H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N9/083

CPC classification number: H04N9/045

Abstract: A pixel array in an image sensor, the image sensor and a digital camera including the image sensor. The image sensor includes a pixel array with colored pixels and unfiltered (color filter-free) pixels. Each unfiltered pixel occupies one or more array locations. The colored pixels may be arranged in uninterrupted rows and columns with unfiltered pixels disposed between the uninterrupted rows and columns. The image sensor may in CMOS with the unfiltered pixels reducing low-light noise and improving low-light sensitivity.

Abstract translation: 图像传感器中的像素阵列，图像传感器和包括图像传感器的数字照相机。 图像传感器包括具有彩色像素和未滤波（无滤色器）像素的像素阵列。 每个未过滤的像素占据一个或多个阵列位置。 彩色像素可以布置在不间断的行和列中，其中未过滤的像素布置在不间断的行和列之间。 图像传感器可以在CMOS中，未滤色像素降低低光噪声并改善低光灵敏度。

公开(公告)号：US07732841B2

公开(公告)日：2010-06-08

申请号：US12172309

申请日：2008-07-14

Applicant: James W. Adkisson ,  Andres Bryant ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Jeffrey B. Johnson ,  Alain Loiseau

Inventor： James W. Adkisson ,  Andres Bryant ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Jeffrey B. Johnson ,  Alain Loiseau

IPC: H01L27/148 ,  H01L31/062

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14689 ,  H01L31/035281

Abstract: The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

Abstract translation: 本发明是像素传感器单元及其制造方法。 像素传感器单元对于给定的光量大约使可用信号加倍。 本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。 具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上​​产生的电子以及形成在基板表面下方的p型收集阱区域 用于收集由撞击光子产生的孔。 具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小 的第一输入和第二输入的信号。

公开(公告)号：US07655966B2

公开(公告)日：2010-02-02

申请号：US12050967

申请日：2008-03-19

Applicant: James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

Inventor： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

IPC: H04N3/14

CPC classification number: H04N5/361 ,  G06F17/5063 ,  H04N5/359 ,  H04N5/3745

Abstract: A global shutter compatible pixel circuit comprising a reset gate (RG) transistor is provided in which a dynamic voltage is applied to the drain of the reset gate transistor in order to reduce a floating diffusion (FD) leakage therethrough during signal hold time. The drain voltage of the reset gate transistor is held at a lower voltage than a circuit supply voltage to minimize the off-state leakage through the RG transistor, thus reducing the change in the voltage at the floating diffusion during the signal hold time. In addition, a design structure for such a circuit providing a dynamic voltage to the drain of a reset gate of a pixel circuit is also provided.

Abstract translation: 提供了包括复位栅极（RG）晶体管的全局快门兼容像素电路，其中动态电压被施加到复位栅极晶体管的漏极，以便减少在信号保持时间期间通过其的浮动扩散（FD）泄漏。 复位栅极晶体管的漏极电压保持在比电路电源电压更低的电压，以最小化通过RG晶体管的截止状态泄漏，从而减少信号保持时间期间浮动扩散时的电压变化。 此外，还提供了用于向像素电路的复位栅极的漏极提供动态电压的这种电路的设计结构。

公开(公告)号：US07633042B2

公开(公告)日：2009-12-15

申请号：US12172306

申请日：2008-07-14

Applicant: James W. Adkisson ,  Andres Bryant ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Jeffrey B. Johnson ,  Alain Lolseau

Inventor： James W. Adkisson ,  Andres Bryant ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Jeffrey B. Johnson ,  Alain Lolseau

IPC: H01L27/00

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14689 ,  H01L31/035281

Abstract: The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

Abstract translation: 本发明是像素传感器单元及其制造方法。 像素传感器单元对于给定的光量大约使可用信号加倍。 本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。 具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上​​产生的电子以及形成在基板表面下方的p型收集阱区域 用于收集由撞击光子产生的孔。 具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小 的第一输入和第二输入的信号。

公开(公告)号：US07491992B2

公开(公告)日：2009-02-17

申请号：US11619024

申请日：2007-01-02

Applicant: James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Richard J. Rassel ,  Jeffrey P. Gambino

Inventor： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Richard J. Rassel ,  Jeffrey P. Gambino

IPC: H01L31/62 ,  H01L31/113

CPC classification number: H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H01L31/035281

Abstract: A structure (and method for forming the same) for an image sensor cell. The method includes providing a semiconductor substrate. Then, a charge collection well is formed in the semiconductor substrate, the charge collection well comprising dopants of a first doping polarity. Next, a surface pinning layer is formed in the charge collection well, the surface pinning layer comprising dopants of a second doping polarity opposite to the first doping polarity. Then, an electrically conductive push electrode is formed in direct physical contact with the surface pinning layer but not in direct physical contact with the charge collection well. Then, a transfer transistor is formed on the semiconductor substrate. The transfer transistor includes first and second source/drain regions and a channel region. The first and second source/drain regions comprise dopants of the first doping polarity. The first source/drain region is in direct physical contact with the charge collection well.

Abstract translation: 用于图像传感器单元的结构（及其形成方法）。 该方法包括提供半导体衬底。 然后，在半导体衬底中形成电荷收集阱，电荷收集阱包含第一掺杂极性的掺杂剂。 接下来，在电荷收集阱中形成表面钉扎层，表面钉扎层包括与第一掺杂极性相反的第二掺杂极性的掺杂剂。 然后，导电的推动电极形成为与表面钉扎层直接物理接触，但不与电荷收集阱直接物理接触。 然后，在半导体衬底上形成传输晶体管。 传输晶体管包括第一和第二源极/漏极区域和沟道区域。 第一和第二源/漏区包括第一掺杂极性的掺杂剂。 第一源极/漏极区域与电荷收集阱直接物理接触。

公开(公告)号：US20090001427A1

公开(公告)日：2009-01-01

申请号：US11770843

申请日：2007-06-29

Applicant: James W. Adkisson ,  John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Mark D. Jaffe

Inventor： James W. Adkisson ,  John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Mark D. Jaffe

IPC: H01L27/148 ,  H01L31/113 ,  H01L31/18

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14643

Abstract: A pixel sensor structure, method of manufacture and method of operating. Disclosed is a buffer pixel cell comprising a barrier region for preventing stray charge carriers from arriving at a dark current correction pixel cell. The buffer pixel cell is located in the vicinity of the dark current correction pixel cell and the buffer pixel cell resembles an active pixel cell. Thus, an environment surrounding the dark current correction pixel cell is similar to the environment surrounding an active pixel cell.

Abstract translation: 像素传感器结构，制造方法和操作方法。 公开了一种缓冲像素单元，其包括用于防止杂散电荷载流子到达暗电流校正像素单元的阻挡区域。 缓冲像素单元位于暗电流校正像素单元附近，并且缓冲像素单元类似于有源像素单元。 因此，围绕暗电流校正像素单元的环境与有源像素单元周围的环境相似。

公开(公告)号：US08233070B2

公开(公告)日：2012-07-31

申请号：US12553457

申请日：2009-09-03

Applicant: John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante

Inventor： John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante

IPC: H04N3/14

CPC classification number: H04N5/37452 ,  H01L27/14609 ,  H04N5/35581 ,  H04N5/3575

Abstract: A pixel sensor cell including a column circuit, a design structure for fabricating the pixel sensor cell including the column circuit and a method for operating the pixel sensor cell including the column circuit are predicated upon the measurement of multiple reference data point and signal data point pairs from a floating diffusion at a variable capacitance. The variable capacitance is provided by excluding or including a transfer gate transistor capacitance in addition to a floating diffusion capacitance. Such a variable capacitance provides variable dynamic ranges for the pixel sensor cell including the column circuit.

Abstract translation: 包括列电路的像素传感器单元，用于制造包括列电路的像素传感器单元的设计结构和用于操作包括列电路的像素传感器单元的方法基于多个参考数据点和信号数据点对的测量 从可变电容的浮动扩散。 通过排除或包括传输栅极晶体管电容以及浮动扩散电容来提供可变电容。 这种可变电容为包括列电路的像素传感器单元提供了可变的动态范围。

公开(公告)号：US20120122261A1

公开(公告)日：2012-05-17

申请号：US13288686

申请日：2011-11-03

Applicant: James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Dale J. Pearson ,  Dennis L. Rogers

Inventor： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Dale J. Pearson ,  Dennis L. Rogers

IPC: H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14689 ,  H01L31/035281

Abstract: A method for manufacturing a pixel sensor cell that includes a photosensitive element having a non-laterally disposed charge collection region. The method includes forming a trench recess in a substrate of a first conductivity type material, and filling the trench recess with a material having second conductivity type material. The second conductivity type material is then diffused out of the filled trench material to the substrate region surrounding the trench to form the non-laterally disposed charge collection region. The filled trench material is removed to provide a trench recess, and the trench recess is filled with a material having a first conductivity type material. A surface implant layer is formed at either side of the trench having a first conductivity type material. A collection region of a trench-type photosensitive element is formed of the outdiffused second conductivity type material and is isolated from the substrate surface.

Abstract translation: 一种制造像素传感器单元的方法，该像素传感器单元包括具有非横向放置的电荷收集区域的感光元件。 该方法包括在第一导电类型材料的衬底中形成沟槽凹槽，并用具有第二导电类型材料的材料填充沟槽凹槽。 然后将第二导电类型材料从填充的沟槽材料扩散到围绕沟槽的衬底区域，以形成非横向布置的电荷收集区域。 去除填充的沟槽材料以提供沟槽凹槽，并且用具有第一导电类型材料的材料填充沟槽凹槽。 表面注入层形成在具有第一导电类型材料的沟槽的任一侧。 沟槽型感光元件的收集区域由向外扩散的第二导电型材料形成，并与衬底表面隔离。

公开(公告)号：US20120038811A1

公开(公告)日：2012-02-16

申请号：US13283819

申请日：2011-10-28

Applicant: John J. Ellis-Monaghan ,  Mark D. Jaffe

Inventor： John J. Ellis-Monaghan ,  Mark D. Jaffe

IPC: H04N5/335 ,  H01L27/148

CPC classification number: H04N5/361 ,  H04N5/359

Abstract: The image qualify of an image frame from a CMOS image sensor array operated in global shutter mode may be enhanced by dispersing or randomizing the noise introduced by leakage currents from floating drains among the rows of the image frame. Further, the image quality may be improved by accounting for time dependent changes in the output of dark pixels in dark pixel rows or dark pixel columns. In addition, voltage and time dependent changes in the output of dark pixels may also be measured to provide an accurate estimate of the noise introduced to the charge held in the floating drains. Such methods may be employed individually or in combination to improve the quality of the image.

Abstract translation: 来自在全球快门模式下操作的CMOS图像传感器阵列的图像帧的图像限定可以通过将来自浮动排水口的泄漏电流引入的噪声分散或随机化在图像帧的行中来增强。 此外，通过考虑暗像素行或暗像素列中的暗像素的输出中的时间依赖性变化，可以提高图像质量。 此外，还可以测量暗像素的输出中的电压和时间相关的变化，以提供引入到浮动排水管中的电荷的噪声的准确估计。 这样的方法可以单独使用或组合使用以提高图像的质量。

公开(公告)号：US20100097511A1

公开(公告)日：2010-04-22

申请号：US12641589

申请日：2009-12-18

Applicant: James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

Inventor： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

IPC: H04N5/335 ,  G06F17/50

CPC classification number: H04N5/361 ,  G06F17/5063 ,  H04N5/359 ,  H04N5/3745

Abstract: A global shutter compatible pixel circuit comprising a reset gate (RG) transistor is provided in which a dynamic voltage is applied to the drain of the reset gate transistor in order to reduce a floating diffusion (FD) leakage therethrough during signal hold time. The drain voltage of the reset gate transistor is held at a lower voltage than a circuit supply voltage to minimize the off-state leakage through the RG transistor, thus reducing the change in the voltage at the floating diffusion during the signal hold time. In addition, a design structure for such a circuit providing a dynamic voltage to the drain of a reset gate of a pixel circuit is also provided.

Abstract translation: 提供了包括复位栅极（RG）晶体管的全局快门兼容像素电路，其中动态电压被施加到复位栅极晶体管的漏极，以便减少在信号保持时间期间通过其的浮动扩散（FD）泄漏。 复位栅极晶体管的漏极电压保持在比电路电源电压更低的电压，以最小化通过RG晶体管的截止状态泄漏，从而减少信号保持时间期间浮动扩散时的电压变化。 此外，还提供了用于向像素电路的复位栅极的漏极提供动态电压的这种电路的设计结构。