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公开(公告)号：US06673521B2
公开(公告)日：2004-01-06
申请号：US09735404
申请日：2000-12-12
IPC分类号： G03F726
摘要： A process of silylation of object surfaces using a mixture of a silylation agent in admixture with an inert liquified gas, such as carbon dioxide.
摘要翻译： 使用甲硅烷基化剂与惰性液化气体如二氧化碳混合的混合物对甲基化表面的方法。
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公开(公告)号：US06656666B2
公开(公告)日：2003-12-02
申请号：US09742401
申请日：2000-12-22
IPC分类号： G03F700
CPC分类号： G03F7/30 , H01L21/0274
摘要： The invention relates generally to photolithographic techniques, and particularly, but not by way of limitation, to a method for preventing the collapse of the image pattern during the stage of drying the image. The invention also relates to structures fabricated using the inventive method.
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公开(公告)号：US06584989B2
公开(公告)日：2003-07-01
申请号：US09836039
申请日：2001-04-17
申请人： Charles J. Taft , Kenneth J. McCullough , George F. Ouimet , David L. Rath , Robert W. Zigner, Jr.
发明人： Charles J. Taft , Kenneth J. McCullough , George F. Ouimet , David L. Rath , Robert W. Zigner, Jr.
IPC分类号： B08B300
CPC分类号： H01L21/02071 , B08B3/00 , C11D11/0047 , G05D21/02 , Y10S134/902
摘要： An apparatus and method is described for cleaning semiconductor wafers using a dilute aqueous solution including at least 80% deionized water, sulfuric acid, an oxidant such as hydrogen peroxide, and a small amount of hydrofluoric acid (HF), preferably in the range of about 5 ppm to about 12 ppm. The automated system mixes the water, sulfuric acid, hydrogen peroxide, and HF to form a cleaning solution having a target HF concentration within the preferred range, for example at 8 ppm. Subsequently, the system maintains the HF concentration at least within about 0.5 ppm to about 1 ppm of the target HF concentration. Thus the system allows effective and predictable cleaning of semiconductor wafers while minimizing damage to metal features, and minimizing cost and waste disposal impacts.
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公开(公告)号：US06892741B2
公开(公告)日：2005-05-17
申请号：US10761496
申请日：2004-01-21
申请人： Jesse Stephen Jur , Kenneth J. McCullough , Wayne Martin Moreau , John Patrick Simons , Charles Jesse Taft
发明人： Jesse Stephen Jur , Kenneth J. McCullough , Wayne Martin Moreau , John Patrick Simons , Charles Jesse Taft
CPC分类号： B08B7/0021 , Y10S134/902
摘要： The present invention provides an apparatus for cleaning a workpiece with a cleaning medium that is maintained at a single fluid phase. The apparatus comprises means for providing the cleaning medium; a pressurizable cleaning vessel for receiving the cleaning medium and the workpiece; and means for maintaining a single fluid phase of the cleaning medium in the cleaning vessel. The present invention further provides a process for cleaning the workpiece with cleaning medium under conditions such that the workpiece is exposed to a single fluid phase of the cleaning medium. The present invention further includes a process for a storage media that includes instructions for controlling a processor for the process of the present invention. The storage media comprises means for controlling the processor to control contacting conditions of the workpiece and the cleaning medium such that the workpiece is exposed to a single fluid phase of the cleaning medium.
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公开(公告)号：US06200891B1
公开(公告)日：2001-03-13
申请号：US09133537
申请日：1998-08-13
申请人： Rangarajan Jagannathan , Karen P. Madden , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Keith R. Pope , David L. Rath
发明人： Rangarajan Jagannathan , Karen P. Madden , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Keith R. Pope , David L. Rath
IPC分类号： H01L214763
CPC分类号： H01L21/31111
摘要： Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.
摘要翻译： 可以使用含有含氟化合物和有机溶剂的液体组合物来除去在层间电介质中常用的那些氧化物。 优选的组合物基本上是非水的并且包括酸酐。 改进的选择性去除氧化物的方法，特别是用于去除其中预暴露（或含导电金属）特征的氧化硅，其中金属（导电金属 - 接枝）特征将通过所需的氧化物去除而暴露，或其中 另外提供了氧化锡氧化物接触金属（或含导电金属）特征。
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公开(公告)号：US06558475B1
公开(公告)日：2003-05-06
申请号：US09546355
申请日：2000-04-10
申请人： Jesse Stephen Jur , Kenneth J. McCullough , Wayne Martin Moreau , John Patrick Simons , Charles Jesse Taft
发明人： Jesse Stephen Jur , Kenneth J. McCullough , Wayne Martin Moreau , John Patrick Simons , Charles Jesse Taft
IPC分类号： B08B300
CPC分类号： B08B7/0021 , Y10S134/902
摘要： The present invention provides an apparatus for cleaning a workpiece with a cleaning medium that is maintained at a single fluid phase. The apparatus includes means for providing the cleaning medium; a pressurizable cleaning vessel for receiving the cleaning medium and the workpiece; and means for maintaining a single fluid phase of the cleaning medium in the cleaning vessel. The present invention further provides a process for cleaning the workpiece with cleaning medium under conditions such that the workpiece is exposed to a single fluid phase of the cleaning medium. The present invention further includes a process for a storage media that includes instructions for controlling a processor for the process of the present invention. The storage media includes means for controlling the processor to control contacting conditions of the workpiece and the cleaning medium such that the workpiece is exposed to a single fluid phase of the cleaning medium.
摘要翻译： 本发明提供一种用保持在单一流体相的清洁介质清洁工件的设备。 该装置包括用于提供清洁介质的装置; 用于接收清洁介质和工件的可加压清洁容器; 以及用于将清洁介质的单个流体相保持在清洁容器中的装置。 本发明还提供了一种用于在工件暴露于清洁介质的单个流体相的条件下用清洁介质清洁工件的方法。 本发明还包括一种用于存储介质的方法，其包括用于控制本发明方法的处理器的指令。 存储介质包括用于控制处理器以控制工件和清洁介质的接触状态的装置，使得工件暴露于清洁介质的单个流体相。
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公开(公告)号：US6066267A
公开(公告)日：2000-05-23
申请号：US342710
申请日：1999-06-29
申请人： David L. Rath , Rangarajan Jagannathan , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Karen P. Madden , Keith R. Pope
发明人： David L. Rath , Rangarajan Jagannathan , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Karen P. Madden , Keith R. Pope
IPC分类号： H01L21/306 , H01L21/308 , H01L21/311 , H01L21/302
CPC分类号： H01L21/31116
摘要： Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.
摘要翻译： 使用含有含氟化合物，某些有机溶剂和水的组合物来蚀刻氮化硅。
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18.发明授权公开(公告)号：US06953042B2
公开(公告)日：2005-10-11
申请号：US10295531
申请日：2002-11-15
申请人： Jesse Stephen Jur , Kenneth J. McCullough , Wayne Martin Moreau , John Patrick Simons , Charles Jesse Taft
发明人： Jesse Stephen Jur , Kenneth J. McCullough , Wayne Martin Moreau , John Patrick Simons , Charles Jesse Taft
CPC分类号： B08B7/0021 , Y10S134/902
摘要： The present invention provides an apparatus for cleaning a workpiece with a cleaning medium that is maintained at a single fluid phase. The apparatus comprises means for providing the cleaning medium; a pressurizable cleaning vessel for receiving the cleaning medium and the workpiece; and means for maintaining a single fluid phase of the cleaning medium in the cleaning vessel. The present invention further provides a process for cleaning the workpiece with cleaning medium under conditions such that the workpiece is exposed to a single fluid phase of the cleaning medium. The present invention further includes a process for a storage media that includes instructions for controlling a processor for the process of the present invention. The storage media comprises means for controlling the processor to control contacting conditions of the workpiece and the cleaning medium such that the workpiece is exposed to a single fluid phase of the cleaning medium.
摘要翻译： 本发明提供一种用保持在单一流体相的清洁介质清洁工件的设备。 该装置包括用于提供清洁介质的装置; 用于接收清洁介质和工件的可加压清洁容器; 以及用于将清洁介质的单个流体相保持在清洁容器中的装置。 本发明还提供了一种用于在工件暴露于清洁介质的单个流体相的条件下用清洁介质清洁工件的方法。 本发明还包括一种用于存储介质的方法，其包括用于控制本发明方法的处理器的指令。 存储介质包括用于控制处理器以控制工件和清洁介质的接触状态的装置，使得工件暴露于清洁介质的单个流体相。
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公开(公告)号：US6150282A
公开(公告)日：2000-11-21
申请号：US969593
申请日：1997-11-13
申请人： David L. Rath , Rangarajan Jagannathan , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Karen P. Madden , Keith R. Pope
发明人： David L. Rath , Rangarajan Jagannathan , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Karen P. Madden , Keith R. Pope
IPC分类号： H01L21/306 , H01L21/768 , H01L21/302
CPC分类号： H01L21/02063 , H01L21/76814 , Y10S438/906
摘要： Etching residue is selectively removed employing a substantially non-aqueous composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include an anhydride.
摘要翻译： 使用含有含氟化合物和某些有机溶剂的基本上非水性组合物选择性地除去蚀刻残渣。 优选的组合物还包括酸酐。
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公开(公告)号：US6117796A
公开(公告)日：2000-09-12
申请号：US133424
申请日：1998-08-13
申请人： Glenn W. Gale , Rangarajan Jagannathan , Karen P. Madden , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Keith R. Pope , David L. Rath
发明人： Glenn W. Gale , Rangarajan Jagannathan , Karen P. Madden , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Keith R. Pope , David L. Rath
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/31111
摘要： Silicon oxide is removed from an article employing a liquid composition containing a fluoride-containing compound, organic solvent, and water. The methods of the invention are especially useful for removal of silicon oxide formed by thermal oxidation of a silicon substrate.
摘要翻译： 使用含有含氟化合物，有机溶剂和水的液体组合物从制品中除去氧化硅。 本发明的方法对于去除通过硅衬底的热氧化形成的氧化硅是特别有用的。
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