Removal of dielectric oxides
    5.
    发明授权
    Removal of dielectric oxides 失效
    去除介电氧化物

    公开(公告)号:US06200891B1

    公开(公告)日:2001-03-13

    申请号:US09133537

    申请日:1998-08-13

    IPC分类号: H01L214763

    CPC分类号: H01L21/31111

    摘要: Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.

    摘要翻译: 可以使用含有含氟化合物和有机溶剂的液体组合物来除去在层间电介质中常用的那些氧化物。 优选的组合物基本上是非水的并且包括酸酐。 改进的选择性去除氧化物的方法,特别是用于去除其中预暴露(或含导电金属)特征的氧化硅,其中金属(导电金属 - 接枝)特征将通过所需的氧化物去除而暴露,或其中 另外提供了氧化锡氧化物接触金属(或含导电金属)特征。

    Method of in situ monitoring of supercritical fluid process conditions
    9.
    发明授权
    Method of in situ monitoring of supercritical fluid process conditions 失效
    超临界流体工艺条件的现场监测方法

    公开(公告)号:US06927393B2

    公开(公告)日:2005-08-09

    申请号:US10320835

    申请日:2002-12-16

    IPC分类号: G01N21/35 G01J5/02

    CPC分类号: G01N21/359 G01N21/3504

    摘要: A method and apparatus are provided for in situ monitoring and analyzing of process parameters for semiconductor fabrication processes including cleaning semiconductor wafers utilizing a supercritical fluid or a high pressure liquid such as CO2. The method and apparatus utilize a spectrometer having a reflective mirror proximate the vessel holding the high pressure fluid. NIR radiation transmitted into the vessel through a window and out of the vessel through an opposed window is reflected and detected and measured and the composition of the fluid in the pressure vessel is determined allowing the user to control process parameters based on the measured composition.

    摘要翻译: 提供了一种用于半导体制造工艺的工艺参数的原位监测和分析的方法和装置,包括利用超临界流体或诸如CO 2的高压液体清洗半导体晶片。 该方法和装置利用具有靠近保持高压流体的容器的反射镜的光谱仪。 通过窗口传输到容器中并通过相对的窗口传出容器的NIR辐射被反射和检测和测量,并且确定压力容器中的流体的组成,允许用户基于测量的组成来控制工艺参数。