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33 条记录 (耗时 0.03 秒)

    Removal of dielectric oxides
    4.
    发明授权
    Removal of dielectric oxides 失效
    去除介电氧化物

    公开(公告)号：US06200891B1

    公开(公告)日：2001-03-13

    申请号：US09133537

    申请日：1998-08-13

    申请人： Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

    发明人： Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

    IPC分类号： H01L214763

    CPC分类号： H01L21/31111

    摘要： Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.

    摘要翻译： 可以使用含有含氟化合物和有机溶剂的液体组合物来除去在层间电介质中常用的那些氧化物。 优选的组合物基本上是非水的并且包括酸酐。 改进的选择性去除氧化物的方法，特别是用于去除其中预暴露（或含导电金属）特征的氧化硅，其中金属（导电金属 - 接枝）特征将通过所需的氧化物去除而暴露，或其中 另外提供了氧化锡氧化物接触金属（或含导电金属）特征。

    Metal oxide field effect transistor with a sharp halo and a method of forming the transistor
    10.
    发明授权
    Metal oxide field effect transistor with a sharp halo and a method of forming the transistor 有权
    具有尖锐光晕的金属氧化物场效应晶体管和形成晶体管的方法

    公开(公告)号：US07384835B2

    公开(公告)日：2008-06-10

    申请号：US11420318

    申请日：2006-05-25

    申请人： Huajie Chen ,  Judson R Holt ,  Rangarajan Jagannathan ,  Wesley C Natzle ,  Michael R Sievers ,  Richard S Wise

    发明人： Huajie Chen ,  Judson R Holt ,  Rangarajan Jagannathan ,  Wesley C Natzle ,  Michael R Sievers ,  Richard S Wise

    IPC分类号： H01L21/335

    CPC分类号： H01L29/66636 ,  H01L29/6659 ,  H01L29/7833

    摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.

    摘要翻译： 公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。 蚀刻半导体层以形成切割栅极介电层的凹部。 低能量植入物形成晕轮。 然后，执行COR预清洁，并且通过外延沉积填充凹部。 外延可以被原位掺杂或随后植入以形成源/漏扩展。 或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。 在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。 或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。