公开(公告)号：US06254796B1

公开(公告)日：2001-07-03

申请号：US09221596

申请日：1998-12-29

申请人： David L. Rath ,  Glenn W. Gale ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Karen P. Madden ,  Harald F. Okorn-Schmidt ,  Keith R. Pope

发明人： David L. Rath ,  Glenn W. Gale ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Karen P. Madden ,  Harald F. Okorn-Schmidt ,  Keith R. Pope

IPC分类号： H01L21302

CPC分类号： H01L21/31111 ,  C03C15/00 ,  C09K13/08

摘要： A silicate glass is selectively etched employing a composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include water.

摘要翻译： 使用含有含氟化合物和某些有机溶剂的组合物选择性地蚀刻硅酸盐玻璃。 优选的组合物还包括水。

公开(公告)号：US5965465A

公开(公告)日：1999-10-12

申请号：US932865

申请日：1997-09-18

申请人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

发明人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

IPC分类号： H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31116

摘要： Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.

公开(公告)号：US6066267A

公开(公告)日：2000-05-23

申请号：US342710

申请日：1999-06-29

申请人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

发明人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

IPC分类号： H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31116

摘要： Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.

摘要翻译： 使用含有含氟化合物，某些有机溶剂和水的组合物来蚀刻氮化硅。

公开(公告)号：US06200891B1

公开(公告)日：2001-03-13

申请号：US09133537

申请日：1998-08-13

申请人： Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

发明人： Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

IPC分类号： H01L214763

CPC分类号： H01L21/31111

摘要： Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.

摘要翻译： 可以使用含有含氟化合物和有机溶剂的液体组合物来除去在层间电介质中常用的那些氧化物。 优选的组合物基本上是非水的并且包括酸酐。 改进的选择性去除氧化物的方法，特别是用于去除其中预暴露（或含导电金属）特征的氧化硅，其中金属（导电金属 - 接枝）特征将通过所需的氧化物去除而暴露，或其中 另外提供了氧化锡氧化物接触金属（或含导电金属）特征。

公开(公告)号：US6150282A

公开(公告)日：2000-11-21

申请号：US969593

申请日：1997-11-13

申请人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

发明人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

IPC分类号： H01L21/306 ,  H01L21/768 ,  H01L21/302

CPC分类号： H01L21/02063 ,  H01L21/76814 ,  Y10S438/906

摘要： Etching residue is selectively removed employing a substantially non-aqueous composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include an anhydride.

摘要翻译： 使用含有含氟化合物和某些有机溶剂的基本上非水性组合物选择性地除去蚀刻残渣。 优选的组合物还包括酸酐。

公开(公告)号：US6117796A

公开(公告)日：2000-09-12

申请号：US133424

申请日：1998-08-13

申请人： Glenn W. Gale ,  Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

发明人： Glenn W. Gale ,  Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31111

摘要： Silicon oxide is removed from an article employing a liquid composition containing a fluoride-containing compound, organic solvent, and water. The methods of the invention are especially useful for removal of silicon oxide formed by thermal oxidation of a silicon substrate.

摘要翻译： 使用含有含氟化合物，有机溶剂和水的液体组合物从制品中除去氧化硅。 本发明的方法对于去除通过硅衬底的热氧化形成的氧化硅是特别有用的。

公开(公告)号：US6033996A

公开(公告)日：2000-03-07

申请号：US969595

申请日：1997-11-13

申请人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

发明人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

IPC分类号： H01L21/02 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01L21/02071 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/963

摘要： Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.

摘要翻译： 使用含有含氟化合物，水和某些有机溶剂的组合物蚀刻或去除蚀刻残留物，蚀刻掩模和氮化硅和/或二氧化硅。

公开(公告)号：US5962384A

公开(公告)日：1999-10-05

申请号：US959038

申请日：1997-10-28

申请人： Emanuel I. Cooper ,  Scott A. Estes ,  Glenn W. Gale ,  Rangarajan Jagannathan ,  Harald F. Okorn-Schmidt ,  David L. Rath

发明人： Emanuel I. Cooper ,  Scott A. Estes ,  Glenn W. Gale ,  Rangarajan Jagannathan ,  Harald F. Okorn-Schmidt ,  David L. Rath

IPC分类号： C11D3/39 ,  C11D7/06 ,  C11D7/32 ,  C11D11/00 ,  H01L21/306 ,  C11D9/04 ,  C03C23/00 ,  C11D3/37 ,  C23G1/02

CPC分类号： H01L21/02052 ,  C11D11/0047 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/3245

摘要： A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH.sub.4 OH:H.sub.2 O.sub.2) solution or a dilute solution such as a 5:x:1 to 200:x:1 solution wherein x is 0.025 to 2.

摘要翻译： 提供了一种使用相同的水溶性SC-1溶液处理多个半导体衬底的方法，该溶液通过存在于溶液中的金属离子或包含含有过氧化氢的碱性溶液的衬底表面去除和/或抑制半导体表面的污染 以及抗氧化性螯合添加剂，如有效提供所需治疗结果的量的CDTA。 SC-1溶液可以是常规的5:1:1（水：NH4OH:H2O2）溶液或稀溶液，例如5:x:1至200:x:1的溶液，其中x为0.025至2。

公开(公告)号：US06191085B1

公开(公告)日：2001-02-20

申请号：US09307695

申请日：1999-05-10

申请人： Emanuel I. Cooper ,  Scott A. Estes ,  Glenn W. Gale ,  Rangarajan Jagannathan ,  Harald F. Okorn-Schmidt ,  David L. Rath

发明人： Emanuel I. Cooper ,  Scott A. Estes ,  Glenn W. Gale ,  Rangarajan Jagannathan ,  Harald F. Okorn-Schmidt ,  David L. Rath

IPC分类号： C11D904

CPC分类号： H01L21/02052 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/3245 ,  C11D11/0047

摘要： A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH4OH:H2O2) solution or a dilute solution such as a 5:x:1 to 200:x:l solution wherein x is 0.025 to 2.

摘要翻译： 提供了一种使用相同的水溶性SC-1溶液处理多个半导体衬底的方法，该溶液通过存在于溶液中的金属离子或包含含有过氧化氢的碱性溶液的衬底表面去除和/或抑制半导体表面的污染 以及抗氧化性螯合添加剂，如有效提供所需治疗结果的量的CDTA。 SC-1溶液可以是常规的5:1:1（水：NH4OH:H2O2）溶液或稀溶液如5:x:1至200:x:1的溶液，其中x为0.025至2。

公开(公告)号：US06584989B2

公开(公告)日：2003-07-01

申请号：US09836039

申请日：2001-04-17

申请人： Charles J. Taft ,  Kenneth J. McCullough ,  George F. Ouimet ,  David L. Rath ,  Robert W. Zigner, Jr.

发明人： Charles J. Taft ,  Kenneth J. McCullough ,  George F. Ouimet ,  David L. Rath ,  Robert W. Zigner, Jr.

IPC分类号： B08B300

CPC分类号： H01L21/02071 ,  B08B3/00 ,  C11D11/0047 ,  G05D21/02 ,  Y10S134/902

摘要： An apparatus and method is described for cleaning semiconductor wafers using a dilute aqueous solution including at least 80% deionized water, sulfuric acid, an oxidant such as hydrogen peroxide, and a small amount of hydrofluoric acid (HF), preferably in the range of about 5 ppm to about 12 ppm. The automated system mixes the water, sulfuric acid, hydrogen peroxide, and HF to form a cleaning solution having a target HF concentration within the preferred range, for example at 8 ppm. Subsequently, the system maintains the HF concentration at least within about 0.5 ppm to about 1 ppm of the target HF concentration. Thus the system allows effective and predictable cleaning of semiconductor wafers while minimizing damage to metal features, and minimizing cost and waste disposal impacts.