摘要:
Disclosed is a printed circuit board including a first layer having a first stacked region, a second stacked region spaced apart from the first stacked region by a selected distance, and a flexible connection part disposed between the first and second stacked regions, and extending to the first stacked region and the second stacked region with selected width and length, the flexible connection part having a conductive pattern layer for signal transmission between the first stacked region and the second stacked region; a pair of second layers disposed apart on an upper surface of each of the first and second stacked regions of the first layer and having a first signal pattern layer on both surfaces of each of the second layers, wherein the first signal pattern layer of the second layer is electrically connected to the conductive pattern of the flexible connection part, a pair of upper metal layers disposed on respective upper surfaces of the second layer, the upper metal layer interposing a first insulating adhesive between the upper metal layer and the second layer, a pair of third layers disposed apart on a lower surface of each of the first and second stacked regions of the first layer and having a second signal pattern layer on both surfaces of each of the third layers, and a pair of lower metal layers disposed on respective lower surfaces of the third layers, the lower metal layer interposing a second insulating adhesive between the lower metal layer and the third layer.
摘要:
An electrolyte for a rechargeable lithium battery includes a non-aqueous organic solvent, a lithium salt, and an additive. The additive includes a gamma butyrolactone compound substituted with at least one F atom at the α-position.
摘要:
A method for fabricating a semiconductor package, includes the steps of forming a first terminal at a first substrate; mixing a polymer resin and solder particles to provide a mixture; covering at least one of an upper surface and side surfaces of the first terminal with the mixture; and heating the first substrate at a temperature higher than a melting point of the solder particles of the mixture to form a solder layer that covers the at least one of an upper surface and a side surface of the first terminal. The solder particles flow or diffuse toward the terminal in the heated polymer resin to adhere to at least some of the exposed surfaces of the terminal thereby forming the solder layer. The solder layer improves the adhesive strength between the terminals of the semiconductor chip and the substrate in the subsequent flip chip bonding process.
摘要:
Provided are an integrated authentication processing apparatus for personal mobility in a wired/wireless integrated service network, a method thereof, and a computer-readable recording medium for recording a program that implements the method. The integrated authentication processing method includes the steps of: a) receiving a network service subscription request from a user through the Internet, registering the user as a service subscriber, and storing/managing subscription information of the subscriber; b) receiving the network access request from a user terminal through a network control platform, processing an integrated authentication for network access and additional services, and transmitting the result to the user terminal through the network control platform; and c) processing a charge information process request from the user terminal whose access is allowed according to the authentication result of the step b) by using charge information and session information of the subscriber without additional authentication process.
摘要:
An apparatus for a High Power Amplifier (HPA) in a wireless communication system is provided. In one example, the apparatus includes a temperature sensor for determining temperature, a controller for receiving the determined temperature and for controlling a gate bias voltage corresponding to the determined temperature and an amplifier for amplifying a Radio Frequency (RF) signal by using the controlled gate bias voltage.
摘要:
In a method and structure for semiconductor failure analysis, the structure comprises: a plurality of analytic fields disposed on a predetermined area of a semiconductor device; semiconductor transistors arranged in each of the analytic fields, the semiconductor transistors arranged in an array; wordlines arranged on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a first direction; and bitline structures on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a second direction, wherein the bitline structures are configured in different patterns in each of the plurality of analytic fields.
摘要:
A fuel cell stack structure comprising a unit module, common distributor, and bus bar is disclosed. The unit module comprises fuel cells, current collecting plates, insulating plates, end plates, and fixing bands.
摘要:
A system for monitoring an optical output/wavelength is employed to be used for a WDM system having a narrow channel space by structuring an etalon and photodiode as an integrated structure. The system includes: a laser source control unit for controlling the laser source; an optical/wavelength monitoring unit for monitoring an optical output/wavelength of the controlled laser source; a TEC control unit for controlling a TEC in order to constantly maintain the laser source of the optical output/wavelength monitoring unit to have a predetermined temperature; a temperature control unit for controlling a heater and a thermistor to set an etalon to a predetermined temperature, wherein the heater is attached on the optical output/wavelength monitoring unit and the thermistor is attached on the heater; a comparison unit for comparing the optical output signal and the wavelength signal, each of which is monitored by the optical output/wavelength monitoring unit; and a processing unit for comparing values of the compared signals with a preset value to control an input current or a temperature of the laser source.
摘要:
Provided are an optical signal receiving apparatus whose optimum receiving performance is maintained regardless of a change in the power of an optical signal, and a method using the same. The apparatus includes an optical coupler for dividing an input optical signal at a predetermined ratio to produce first and second divided signals, a photoelectric converter for converting the first divided signal into an electric signal, an amplifier for amplifying the electric signal within a predetermined range centering on a reference voltage, a reference voltage controlling unit for detecting the power of the second divided signal, predicting the power of the first divided signal, and controlling the amplitude of the reference voltage in accordance with the predicted power, and a clock & data recovery unit for recovering a clock signal and data from a signal output from the amplifier. Even if the power of an optical signal changes, the reference voltage of a limiting amplifier, which is best suitable for optimum performance with respect to the power of an input optical signal, can be detected and adjusted using the method and apparatus, thereby maintaining the optimum receiving performance of the optical signal receiving apparatus.
摘要:
This invention is to manufacturing of SOI (Silicon On Insulator) wafer; with respect to manufacturing of SOI wafer, preparation process of silicon wafer with desired thickness (100), deposition of Alumina (Al2O3) as insulator by an ALE (Atomic Layer Epitaxial) method such as ALCVD, ALD, ASCVD, etc . . . (110), bonding of this wafer with another silicon wafer by various bonding methods (120), Cutting of this bonded wafer by various methods of cutting (130), Polishing the surface of the cut wafer (140). For the insulator material, titanium oxide (TiO2) or tantalum oxide (Ta2O5) can be used other than Alumina (Al2O3) and such bonding process can be done by unibonding method and cutting method can be done by Smart Cut process.
摘要翻译:本发明是制造SOI(绝缘体上硅)晶片; 关于SOI晶片的制造,具有期望厚度(100)的硅晶片的制备工艺,通过ALC(原子层外延)方法诸如ALCVD,ALD,ASCVD等沉积氧化铝(Al 2 O 3)作为绝缘体。 。 。 (110),通过各种粘合方法(120)将该晶片与另一硅晶片接合,通过各种切割方法切割该接合晶片(130),抛光切割晶片(140)的表面。 对于绝缘体材料,可以使用除氧化铝(Al2O3)之外的氧化钛(TiO 2)或氧化钽(Ta 2 O 5),并且这种接合工艺可以通过单粘合方法进行,切割方法可以通过智能切割工艺进行。