Transmission and reflection dual operational mode light processing device
    11.
    发明授权
    Transmission and reflection dual operational mode light processing device 有权
    传输和反射双操作模式光处理装置

    公开(公告)号:US07995263B1

    公开(公告)日:2011-08-09

    申请号:US12317603

    申请日:2008-12-26

    申请人: Ju-Ai Ruan

    发明人: Ju-Ai Ruan

    IPC分类号: G02B26/00

    CPC分类号: G02B26/02

    摘要: A spatial light modulator suitable for flat panel displays and methods of making the modulators are disclosed. The light modulator comprises a light separator, integrated circuits (IC), light switches (concurrently called light shutters), and optional color filters. The light separator is used to direct light uniformly illuminated on the incident surface (entrance surface) into individual pixels, and condenses the light within each pixel to a small fraction of pixel space on the viewing surface. ICs and light shutters are used to control color and light intensity at individual pixels. Several novel designs of the light modulator and light shutters are disclosed. Methods of building self-aligned structures for placing micro-spherical ball spacers for attaching protective screens to the light modulator is also disclosed.

    摘要翻译: 公开了适用于平板显示器的空间光调制器和制造调制器的方法。 光调制器包括光分离器,集成电路(IC),光开关(同时称为光闸)和可选的滤色器。 光分离器用于将均匀地照射在入射表面(入射面)上的光引导到单独的像素中,并且将每个像素内的光聚焦到观察表面上的一小部分像素空间。 IC和光闸用于控制各个像素的颜色和光强度。 公开了光调制器和光闸的若干新颖设计。 还公开了用于将用于将防护屏幕附着到光调制器的微球形球隔离件的自对准结构的方法。

    Method for reducing contamination, copper reduction, and depositing a dielectric layer on a semiconductor device

    公开(公告)号:US06790777B2

    公开(公告)日:2004-09-14

    申请号:US10288717

    申请日:2002-11-06

    IPC分类号: H01L2144

    摘要: The present invention relates to a method for improving an interface of a semiconductor device. The method comprises providing a first and second substrate having an oxidized region, and establishing a first loading position in a first process chamber. The first and second substrates are consecutively inserted into the first process chamber and generally simultaneously processed, wherein the oxidized region is reduced by exposure to a first plasma. The first and second substrates are then consecutively removed and the first substrate is inserted into a second process chamber and subsequently processed. The second substrate is then inserted into the second process chamber and the first and second substrates are simultaneously processed. The first substrate is the removed, and the second substrate is processed again. According to one exemplary aspect, the first and second substrates are exposed to a first temperature in the first process chamber for approximately half the time the first and second substrates are exposed to a higher second temperature in the second process chamber while maintaining throughput of substrates.