摘要:
A spatial light modulator suitable for flat panel displays and methods of making the modulators are disclosed. The light modulator comprises a light separator, integrated circuits (IC), light switches (concurrently called light shutters), and optional color filters. The light separator is used to direct light uniformly illuminated on the incident surface (entrance surface) into individual pixels, and condenses the light within each pixel to a small fraction of pixel space on the viewing surface. ICs and light shutters are used to control color and light intensity at individual pixels. Several novel designs of the light modulator and light shutters are disclosed. Methods of building self-aligned structures for placing micro-spherical ball spacers for attaching protective screens to the light modulator is also disclosed.
摘要:
The present invention relates to a method for improving an interface of a semiconductor device. The method comprises providing a first and second substrate having an oxidized region, and establishing a first loading position in a first process chamber. The first and second substrates are consecutively inserted into the first process chamber and generally simultaneously processed, wherein the oxidized region is reduced by exposure to a first plasma. The first and second substrates are then consecutively removed and the first substrate is inserted into a second process chamber and subsequently processed. The second substrate is then inserted into the second process chamber and the first and second substrates are simultaneously processed. The first substrate is the removed, and the second substrate is processed again. According to one exemplary aspect, the first and second substrates are exposed to a first temperature in the first process chamber for approximately half the time the first and second substrates are exposed to a higher second temperature in the second process chamber while maintaining throughput of substrates.
摘要:
A method for forming planar isolation structures for integrated circuits. A etch barrier is formed over the isolation fill material and an etch back is performed to remove material above unetched portions of the substrate. The exposed fill material is etched and planarized to form a planar isolation structure.