-
公开(公告)号：US07977678B2
公开(公告)日：2011-07-12
申请号：US12336996
申请日：2008-12-17
IPC分类号： H01L29/04
CPC分类号： H01L27/3276 , H01L27/124 , H01L27/1266
摘要： A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.
摘要翻译： 提供一种使用能够抑制由于布线的电位下降引起的像素之间的亮度不均匀的发光元件的半导体显示装置。 供给电源电位的电源线在布置有多个像素的显示区域中彼此电连接。 此外，在用于将显示区域中的电源线彼此电连接并且包括在像素中的晶体管的栅电极的布线（辅助电源线）上形成层间绝缘膜; 并且在辅助电源线和栅电极之间形成的层间绝缘膜上形成电源线。 此外，形成在层间绝缘膜上的布线（辅助布线）与辅助电源线电连接或直接连接。
-
公开(公告)号：US08421069B2
公开(公告)日：2013-04-16
申请号：US12904579
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。 包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体 氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。 通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。
-
公开(公告)号：US08294154B2
公开(公告)日：2012-10-23
申请号：US13179824
申请日：2011-07-11
IPC分类号： H01L29/04
CPC分类号： H01L27/3276 , H01L27/124 , H01L27/1266
摘要： A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.
摘要翻译： 提供一种使用能够抑制由于布线的电位下降引起的像素之间的亮度不均匀的发光元件的半导体显示装置。 供给电源电位的电源线在布置有多个像素的显示区域中彼此电连接。 此外，在用于将显示区域中的电源线彼此电连接并且包括在像素中的晶体管的栅电极的布线（辅助电源线）上形成层间绝缘膜; 并且在辅助电源线和栅电极之间形成的层间绝缘膜上形成电源线。 此外，形成在层间绝缘膜上的布线（辅助布线）与辅助电源线电连接或直接连接。
-
公开(公告)号：US20110101331A1
公开(公告)日：2011-05-05
申请号：US12904579
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。 包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体 氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。 通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。
-
公开(公告)号：US20110089414A1
公开(公告)日：2011-04-21
申请号：US12904565
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/12
CPC分类号： H01L29/26 , G06K19/07758 , G11C7/00 , G11C19/28 , H01L21/8236 , H01L23/66 , H01L27/0883 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78609 , H01L29/7869 , H01L29/78696 , H01L2223/6677 , H02M3/07
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。 使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体 （供体），并且具有比硅半导体更大的能隙。 通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。
-
公开(公告)号：US20090159890A1
公开(公告)日：2009-06-25
申请号：US12336996
申请日：2008-12-17
IPC分类号： H01L33/00
CPC分类号： H01L27/3276 , H01L27/124 , H01L27/1266
摘要： A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.
摘要翻译： 提供一种使用能够抑制由于布线的电位下降引起的像素之间的亮度不均匀的发光元件的半导体显示装置。 供给电源电位的电源线在布置有多个像素的显示区域中彼此电连接。 此外，在用于将显示区域中的电源线彼此电连接并且包括在像素中的晶体管的栅电极的布线（辅助电源线）上形成层间绝缘膜; 并且在辅助电源线和栅电极之间形成的层间绝缘膜上形成电源线。 此外，形成在层间绝缘膜上的布线（辅助布线）与辅助电源线电连接或直接连接。
-
公开(公告)号：US08330702B2
公开(公告)日：2012-12-11
申请号：US12699929
申请日：2010-02-04
申请人： Hiroyuki Miyake , Kei Takahashi
发明人： Hiroyuki Miyake , Kei Takahashi
IPC分类号： G09G3/36
CPC分类号： H03K17/162 , G09G3/3648 , G09G3/3677 , G09G2300/0408 , G09G2300/0819 , G09G2310/0286 , G09G2310/0289 , G09G2320/043 , G09G2320/045 , G11C19/28 , G11C19/285 , H01L27/088 , H01L27/1288 , H01L29/04 , H01L29/78696 , H03K17/687
摘要： An object of the present invention is to suppress deterioration in the thin film transistor. A plurality of pulse output circuits each include first to eleventh thin film transistors is formed. The pulse output circuit is operated on the basis of a plurality of clock signals which control each transistor, the previous stage signal input from a pulse output circuit in the previous stage, the next stage signal input from a pulse output circuit in the next stage, and a reset signal. In addition, a microcrystalline semiconductor is used for a semiconductor layer serving as a channel region of each transistor. Therefore, degradation of characteristics of the transistor can be suppressed.
摘要翻译： 本发明的目的是抑制薄膜晶体管的劣化。 多个脉冲输出电路各自包括第一至第十一薄膜晶体管。 脉冲输出电路基于控制每个晶体管的多个时钟信号，从前一级的脉冲输出电路输入的前级信号，下一级的脉冲输出电路输入的下一级信号， 和复位信号。 此外，微晶半导体用作用作每个晶体管的沟道区的半导体层。 因此，可以抑制晶体管的特性的劣化。
-
公开(公告)号：US20120032606A1
公开(公告)日：2012-02-09
申请号：US13279531
申请日：2011-10-24
IPC分类号： H05B37/02
CPC分类号： G09G3/3225 , G09G2300/043 , G09G2300/0866 , G09G2320/0223 , G09G2330/025
摘要： The amplitude of a potential of a signal line is decreased and a scan line driver circuit is prevented from being excessively loaded. A light-emitting device includes a light-emitting element; a first power supply line having a first potential; a second power supply line having a second potential; a first transistor for controlling a connection between the first power supply line and the light-emitting element; a second transistor, which is controlled in accordance with a video signal, whether outputting the second potential applied from the second power supply line or not; a switching element for selecting either the first potential applied from the first power supply line or the output of the second transistor; and a third transistor for selecting whether the first potential or the output of the second transistor which is selected by the switch is applied to a gate of the first transistor.
摘要翻译： 信号线的电位的幅度减小，防止扫描线驱动电路过载。 发光装置包括发光元件; 具有第一电位的第一电源线; 具有第二电位的第二电源线; 用于控制第一电源线和发光元件之间的连接的第一晶体管; 根据视频信号控制的第二晶体管，是否输出从第二电源线施加的第二电位; 用于选择从第一电源线施加的第一电位或第二晶体管的输出的开关元件; 以及第三晶体管，用于选择由开关选择的第二晶体管的第一电位或输出是施加到第一晶体管的栅极。
-
公开(公告)号：US08519628B2
公开(公告)日：2013-08-27
申请号：US13279531
申请日：2011-10-24
IPC分类号： G09G3/10
CPC分类号： G09G3/3225 , G09G2300/043 , G09G2300/0866 , G09G2320/0223 , G09G2330/025
摘要： The amplitude of a potential of a signal line is decreased and a scan line driver circuit is prevented from being excessively loaded. A light-emitting device includes a light-emitting element; a first power supply line having a first potential; a second power supply line having a second potential; a first transistor for controlling a connection between the first power supply line and the light-emitting element; a second transistor, which is controlled in accordance with a video signal, whether outputting the second potential applied from the second power supply line or not; a switching element for selecting either the first potential applied from the first power supply line or the output of the second transistor; and a third transistor for selecting whether the first potential or the output of the second transistor which is selected by the switch is applied to a gate of the first transistor.
摘要翻译： 信号线的电位的幅度减小，防止扫描线驱动电路过载。 发光装置包括发光元件; 具有第一电位的第一电源线; 具有第二电位的第二电源线; 用于控制第一电源线和发光元件之间的连接的第一晶体管; 根据视频信号控制的第二晶体管，是否输出从第二电源线施加的第二电位; 用于选择从第一电源线施加的第一电位或第二晶体管的输出的开关元件; 以及第三晶体管，用于选择由开关选择的第二晶体管的第一电位或输出是施加到第一晶体管的栅极。
-
公开(公告)号：US08044598B2
公开(公告)日：2011-10-25
申请号：US12352688
申请日：2009-01-13
IPC分类号： G09G3/10
CPC分类号： G09G3/3225 , G09G2300/043 , G09G2300/0866 , G09G2320/0223 , G09G2330/025
摘要： The amplitude of a potential of a signal line is decreased and a scan line driver circuit is prevented from being excessively loaded. A light-emitting device includes a light-emitting element; a first power supply line having a first potential; a second power supply line having a second potential; a first transistor for controlling a connection between the first power supply line and the light-emitting element; a second transistor, which is controlled in accordance with a video signal, whether outputting the second potential applied from the second power supply line or not; a switching element for selecting either the first potential applied from the first power supply line or the output of the second transistor; and a third transistor for selecting whether the first potential or the output of the second transistor which is selected by the switch is applied to a gate of the first transistor.
摘要翻译： 信号线的电位的幅度减小，防止扫描线驱动电路过载。 发光装置包括发光元件; 具有第一电位的第一电源线; 具有第二电位的第二电源线; 用于控制第一电源线和发光元件之间的连接的第一晶体管; 根据视频信号控制的第二晶体管，是否输出从第二电源线施加的第二电位; 用于选择从第一电源线施加的第一电位或第二晶体管的输出的开关元件; 以及第三晶体管，用于选择由开关选择的第二晶体管的第一电位或输出是施加到第一晶体管的栅极。
-
-
-
-
-
-
-
-
-
搜索结果
93 条记录 (耗时 0.028 秒)
