摘要:
In a method for correcting astigmatism and focusing in a charged particle optical lens-barrel, according to the invention, Fourier transformation data items are obtained, which indicate images obtained by scanning a sample with a charged particle beam when the focal distance of an objective lens is set to each of at least two different values. Then, the configuration of the section of the beam is determined on the basis of the difference between the data items, thereby performing astigmatism correction and focusing. As a result, a charged particle microscope can perform highly accurate astigmatism correction and focusing during observation, irrespective of the surface configuration of the sample or the beam section on the sample.
摘要:
A synchrotron-type accelerator of the invention has a torus-shaped beam duct and an acceleration section inserted in the beam duct. The acceleraton section has an accelerating cavity communicating with the interior of the beam duct. An RF electric field is applied to the interior of the accelerating cavity. A damping antenna such as a loop antenna is arranged in the accelerating cavity. The damping antenna is supported to be movable in a direction with proper angle to the axis of the accelerating cavity and is connected to a linear drive unit arranged outside the acceleration section. The linear drive unit moves the damping antenna in a direction with proper angle to the axis of the accelerating cavity, so that an insertion amount of the damping antenna with respect to the accelerating cavity is varied.
摘要:
According to one embodiment, an electron beam irradiation apparatus comprises an objective lens configured to irradiate a specimen surface with an electron beam, an electron detector which is provided between the objective lens and the specimen surface and which is configured to detect reflected electrons or secondary electrons emitted from the specimen surface, and an antireflection mechanism which is provided between the electron detector and the specimen surface. The antireflection mechanism has a plurality of holes following spiral trajectories of reflected electrons or secondary electrons emitted from the specimen surface and is configured to prevent the reflected electrons or secondary electrons from being re-reflected toward the specimen surface and to direct a part of the reflected electrons or secondary electrons to the electron detector.
摘要:
A pattern forming method is proposed for easy correction of a pattern-size variation occurring in an etching process. An energy beam is radiated onto a resist-applied target while the energy beam is adjusted to correct the pattern-size variation occurring in the etching process. The resist on the target is developed to form a resist pattern. The target is etched with the resist pattern as a mask, thus forming patterns thereon.
摘要:
A pattern forming method is proposed for easy correction of a pattern-size variation occurring in an etching process. An energy beam is radiated onto a resist-applied target while the energy beam is adjusted to correct the pattern-size variation occurring in the etching process. The resist on the target is developed to form a resist pattern. The target is etched with the resist pattern as a mask, thus forming patterns thereon.
摘要:
A mask inspection apparatus of the present invention includes an electron gun for irradiating an electron beam onto a mask with a pattern formed thereon, an electron lens for magnifying an electro-optic mask image passed through the mask, a fluorescent screen for converting the magnified electro-optic mask image to an optical mask image, an optical lens for optically magnifying the optical mask image, a detector for detecting the magnified optical mask image, and a comparator for inspection a defect in the pattern on the basis of the image. By doing so, it is possible to suppress aberrations resulting from the electro-optic magnification and, in addition, inspect the pattern with a high resolution through optical magnification. It is also possible to inspect the mask at its area and to inspect a defect at high speeds.
摘要:
According to one embodiment, an electron beam irradiation apparatus comprises an objective lens configured to irradiate a specimen surface with an electron beam, an electron detector which is provided between the objective lens and the specimen surface and which is configured to detect reflected electrons or secondary electrons emitted from the specimen surface, and an antireflection mechanism which is provided between the electron detector and the specimen surface. The antireflection mechanism has a plurality of holes following spiral trajectories of reflected electrons or secondary electrons emitted from the specimen surface and is configured to prevent the reflected electrons or secondary electrons from being re-reflected toward the specimen surface and to direct a part of the reflected electrons or secondary electrons to the electron detector.
摘要:
A charged beam drawing apparatus deflects, by an electrostatic deflector, a charged beam generated from a charged beam source, and applies the charged beam to a desired position on a sample to draw a pattern. The electrostatic deflector includes a plurality of deflecting electrodes arranged symmetrically with respect to a point around an optical axis of the charged beam, a ground external cylinder which is disposed coaxially with the optical axis and which is provided to enclose the deflecting electrodes, a resistive film provided on an inner surface of the ground external cylinder, and a conductive film provided on a surface of the resistive film. A capacitance is formed between the deflecting electrodes and the conductive film, and a resistance is formed between the ground conductor and the conductive film.
摘要:
An electron beam drawing apparatus, comprises an electrostatic deflector which deflects the electron beam by an electric field, a coaxial cable which is connected to deflecting electrodes, and a resistive element which is connected between a central conductor and an outer conductor or the external cylinder. The electrostatic deflector includes the external cylinder provided more downstream than the electron source and kept at the ground potential and a plurality of deflecting electrodes which are provided in the external cylinder. The coaxial cable includes the central conductor and the tubular outer conductor, one end of the central conductor passing through the external cylinder and being connected to the deflecting electrodes and one end of the outer conductor being connected to the external cylinder. The resistive element is set to a resistance for obtaining impedance matching with the coaxial cable.
摘要:
It is made possible to prevent the color aberration at the lenses from increasing and prevent the current distribution on the sample surface from changing at the time of the blanking operation. A deflector is placed between the first and second shaping apertures. A first crossover image is formed between the first and second shaping apertures. A second crossover image is formed in the vicinity of the beam blanking aperture. The deflector placed between the first shaping aperture and the second shaping aperture includes at least two deflectors. A beam position on the beam blanking aperture is moved without moving the image of the first shaping aperture on the second shaping aperture, by deflecting the electron beam at the time of blanking.