利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

31 条记录 (耗时 0.034 秒)

    Temperature controlled gas feedthrough
    14.
    发明授权
    Temperature controlled gas feedthrough 有权
    温度控制气体馈通

    公开(公告)号：US06527865B1

    公开(公告)日：2003-03-04

    申请号：US09595767

    申请日：2000-06-16

    申请人： Talex Sajoto ,  Charles Dornfest ,  Leonid Selyutin ,  Jun Zhao ,  Vincent Ku ,  Xiao Liang Jin

    发明人： Talex Sajoto ,  Charles Dornfest ,  Leonid Selyutin ,  Jun Zhao ,  Vincent Ku ,  Xiao Liang Jin

    IPC分类号： C23C16000

    CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4402 ,  C23C16/4409 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/45561 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67017 ,  H01L21/6715

    摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.

    摘要翻译： 本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。 一方面，提供了一种用于控制在衬底处理室和系统中流过气体馈通的气体的装置和方法。 另一方面，提供沉积室用于沉积需要蒸发的BST和其它材料，特别是低挥发性前体，其作为液体输送到蒸发器以转化为气相，并且必须在升高的温度下运输以防止不必要的冷凝 在腔室部件上。 该室包括一系列加热的温度控制的内衬，例如加热的气体馈通。

    Cold trap
    16.
    发明授权
    Cold trap 失效
    冷阱

    公开(公告)号：US6066209A

    公开(公告)日：2000-05-23

    申请号：US52743

    申请日：1998-03-31

    申请人： Talex Sajoto ,  Jun Zhao ,  Vincent Ku ,  Charles Dornfest

    发明人： Talex Sajoto ,  Jun Zhao ,  Vincent Ku ,  Charles Dornfest

    IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  H01L21/00 ,  H01L21/31 ,  C23C16/00

    CPC分类号： C23C16/4409 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/45561 ,  C23C16/4557 ,  H01L21/67017 ,  H01L21/6715 ,  Y10S261/65

    摘要： The invention relates to an apparatus and process for filtering deposition gases in a substrate processing system. Particularly contemplated is an apparatus and process for the filtering deposition gases of a metal-oxide film deposited on a silicon wafer to make integrated circuits. In one embodiment, the invention provides an apparatus for filtering a fluid in a semiconductor processing system, comprising a housing and a filtering member disposable in the housing, the filtering member comprising a base portion and a filtering portion having an inlet and an outlet and a plurality of temperature controlled fluid passages formed between the inlet and the outlet, the passages having a length longer than a width across the passages.

    摘要翻译： 本发明涉及一种用于在基板处理系统中过滤沉积气体的装置和方法。 特别考虑的是用于过滤沉积在硅晶片上的金属氧化物膜的沉积气体以制造集成电路的装置和方法。 在一个实施例中，本发明提供了一种用于对半导体处理系统中的流体进行过滤的装置，包括壳体和一次性在壳体中的过滤构件，过滤构件包括基部和具有入口和出口的过滤部分， 多个温度控制的流体通道形成在入口和出口之间，通道的长度大于通道两端的宽度。

    CVD processing chamber
    18.
    发明授权
    CVD processing chamber 失效
    CVD处理室

    公开(公告)号：US5853607A

    公开(公告)日：1998-12-29

    申请号：US540812

    申请日：1995-10-11

    申请人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

    发明人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  A62C1/00 ,  A62D1/00

    CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

    摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

    摘要翻译： 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。

    CVD Processing chamber
    19.
    发明授权
    CVD Processing chamber 失效
    CVD加工室

    公开(公告)号：US5558717A

    公开(公告)日：1996-09-24

    申请号：US348273

    申请日：1994-11-30

    申请人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

    发明人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00

    CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

    摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

    摘要翻译： 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。

    Chemical vapor deposition vaporizer
    20.
    发明授权
    Chemical vapor deposition vaporizer 失效
    化学气相沉积蒸发器

    公开(公告)号：US06210485B1

    公开(公告)日：2001-04-03

    申请号：US09352629

    申请日：1999-07-13

    申请人： Jun Zhao ,  Lee Luo ,  Xiaoliang Jin ,  Frank Chang ,  Charles Dornfest ,  Po Tang

    发明人： Jun Zhao ,  Lee Luo ,  Xiaoliang Jin ,  Frank Chang ,  Charles Dornfest ,  Po Tang

    IPC分类号： C23C1600

    CPC分类号： C23C16/4481

    摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the vaporization of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, for deposition on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. The vaporizer comprises thermally controlled components which are adapted for easy assembly and disassembly. A main vaporizing section provides a large heated surface for flash vaporization. A high conductance blocker is disposed at a lower end of the vaporizer to provide an extended vaporization surface. Optionally, a filter may be employed to capture unvaporized precursor droplets.

    摘要翻译： 本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。 特别考虑的是用于蒸发金属氧化物膜如钡，锶，氧化钛（BST）膜的装置和方法，用于沉积在硅晶片上，以使集成电路电容器用于高容量动态存储器模块。 蒸发器包括适于容易组装和拆卸的热控部件。 主蒸发部分提供用于闪蒸的大的加热表面。 高电导阻挡器设置在蒸发器的下端以提供延长的蒸发表面。 任选地，可以使用过滤器来捕获未汽化的前体液滴。