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    CVD Processing chamber
    1.
    发明授权
    CVD Processing chamber 失效
    CVD加工室

    公开(公告)号：US5558717A

    公开(公告)日：1996-09-24

    申请号：US348273

    申请日：1994-11-30

    申请人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

    发明人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00

    CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

    摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

    摘要翻译： 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。

    CVD processing chamber
    2.
    发明授权
    CVD processing chamber 失效
    CVD处理室

    公开(公告)号：US5853607A

    公开(公告)日：1998-12-29

    申请号：US540812

    申请日：1995-10-11

    申请人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

    发明人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  A62C1/00 ,  A62D1/00

    CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

    摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

    摘要翻译： 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。

    Dome-shaped inductive coupling wall having a plurality of radii for an inductively coupled plasma reactor
    4.
    发明授权
    Dome-shaped inductive coupling wall having a plurality of radii for an inductively coupled plasma reactor 有权
    具有用于电感耦合等离子体反应器的多个半径的圆顶形感应耦合壁

    公开(公告)号：US06364995B1

    公开(公告)日：2002-04-02

    申请号：US09561262

    申请日：2000-04-27

    申请人： Kevin Fairbairn ,  Romuald Nowak

    发明人： Kevin Fairbairn ,  Romuald Nowak

    IPC分类号： C23F102

    CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J37/3244

    摘要： A non-conductive dome-shaped portion having a plurality of different radii as a dielectric inductive coupling wall of a reactor chamber. The non-conductive dome-shaped portion having a plurality of different radii being adapted to be positioned in close underlying relationship to a coil antenna and transmissive of RF energy inductively coupled into the chamber from the coil.

    摘要翻译： 具有多个不同半径作为反应室的介电感应耦合壁的非导电圆顶形部分。 具有多个不同半径的非导电圆顶形部分适于被定位成与线圈天线紧密关系，并且从线圈感应地耦合到腔室中的RF能量的透射。

    Mixed frequency CVD process
    5.
    发明授权
    Mixed frequency CVD process 有权
    混合频率CVD工艺

    公开(公告)号：US06358573B1

    公开(公告)日：2002-03-19

    申请号：US09585258

    申请日：2000-06-02

    申请人： Sébastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

    发明人： Sébastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

    IPC分类号： H05H124

    CPC分类号： H01J37/32174 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082

    摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.

    摘要翻译： 一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。 气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。 每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。 混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。 这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

    Vertical dual loadlock chamber
    6.
    发明授权
    Vertical dual loadlock chamber 失效
    垂直双重装载室

    公开(公告)号：US5909994A

    公开(公告)日：1999-06-08

    申请号：US749611

    申请日：1996-11-18

    申请人： Rick Blum ,  Kevin Fairbairn ,  Christopher Lane

    发明人： Rick Blum ,  Kevin Fairbairn ,  Christopher Lane

    IPC分类号： H01L21/00 ,  H01L21/677 ,  B65G1/10

    CPC分类号： H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/67754 ,  Y10S414/137 ,  Y10S414/139

    摘要： A vacuum loadlock is provided for housing a pair of wafers in proper alignment for concurrent processing. In one embodiment, a single chamber loadlock is provided with a gas diffuser disposed therein to decrease venting times within the loadlock. In another embodiment, a dual chamber loadlock is provided having first and second isolatable regions disposed adjacent a transfer region to increase throughput of the system.

    摘要翻译： 提供了真空负载锁，用于容纳一对正确对准的一对晶片以进行并行处理。 在一个实施例中，单室负载锁具有设置在其中的气体扩散器，以减少负载锁中的通气时间。 在另一个实施例中，提供双室负载锁，其具有邻近传送区域设置的第一和第二隔离区域，以增加系统的吞吐量。

    Apparatus and methods for upgraded substrate processing system with microwave plasma source
    9.
    发明授权
    Apparatus and methods for upgraded substrate processing system with microwave plasma source 有权
    具有微波等离子体源的升级基板处理系统的装置和方法

    公开(公告)号：US06230652B1

    公开(公告)日：2001-05-15

    申请号：US09480923

    申请日：2000-01-11

    申请人： Tsutomu Tanaka ,  Mukul Kelkar ,  Kevin Fairbairn ,  Hari Ponnekanti ,  David Cheung

    发明人： Tsutomu Tanaka ,  Mukul Kelkar ,  Kevin Fairbairn ,  Hari Ponnekanti ,  David Cheung

    IPC分类号： C23C1600

    CPC分类号： H01J37/32862 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32357

    摘要： An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.

    摘要翻译： 根据具体实施例的用于提供用于有效清洁腔室的等离子体的升级CVD系统的装置和方法。 使用本发明的升级的CVD系统也可以实现在基板上的蚀刻或沉积层。 在一个具体实施方案中，本发明提供了一种易于拆卸，方便处理且相对便宜的微波等离子体源，作为对现有CVD设备的改进或可移除的添加。 在优选实施例中，远程微波等离子体源有效地提供等离子体，而不需要等离子体施加管的液体冷却。 在另一个实施方案中，本发明提供了一种改进的CVD装置或改进现有的CVD装置，其能够产生等离子体，其能够在需要时有效地清洁腔室。