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    CVD processing chamber
    1.
    发明授权
    CVD processing chamber 失效
    CVD处理室

    公开(公告)号：US5853607A

    公开(公告)日：1998-12-29

    申请号：US540812

    申请日：1995-10-11

    申请人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

    发明人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  A62C1/00 ,  A62D1/00

    CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

    摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

    摘要翻译： 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。

    CVD Processing chamber
    2.
    发明授权
    CVD Processing chamber 失效
    CVD加工室

    公开(公告)号：US5558717A

    公开(公告)日：1996-09-24

    申请号：US348273

    申请日：1994-11-30

    申请人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

    发明人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00

    CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

    摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

    摘要翻译： 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。

    Apparatus for substrate processing with improved throughput and yield
    6.
    发明授权
    Apparatus for substrate processing with improved throughput and yield 有权
    用于基板处理的装置，具有改善的生产量和产量

    公开(公告)号：US6129044A

    公开(公告)日：2000-10-10

    申请号：US409477

    申请日：1999-10-06

    申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

    发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

    IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32 ,  C23C16/00 ,  G06F19/00

    CPC分类号： C23C16/4411 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/2001

    摘要： The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

    摘要翻译： 本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。 根据实施例，本发明提供了一种用于基板处理的装置。 该装置使热交换介质通过真空室的室主体中的通道循环，并将具有用于支撑基板的表面的加热器基座加热到加热器温度。 热交换介质的热交换温度为约60℃以下。 该设备还以流速将气体流入室中，以将膜沉积在基底上，其中流速提供了低于加热器温度的基底的有效温度，并且其中膜在沉积之后满足均匀性和电阻规格 一些基板。 在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。 因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

    Apparatus for ceramic pedestal and metal shaft assembly
    7.
    发明授权
    Apparatus for ceramic pedestal and metal shaft assembly 失效
    陶瓷基座和金属轴组件的装置

    公开(公告)号：US5994678A

    公开(公告)日：1999-11-30

    申请号：US798004

    申请日：1997-02-12

    申请人： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Charles Dornfest ,  Stefan Wolff ,  Lee Luo ,  Eller Juco

    发明人： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Charles Dornfest ,  Stefan Wolff ,  Lee Luo ,  Eller Juco

    IPC分类号： C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  H05B3/06 ,  C23C16/00

    CPC分类号： C23C16/463 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/5096

    摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

    摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许通过腔室的15升/分钟的流速具有最小的背侧沉积并且最小化在室的底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

    High temperature ceramic heater assembly with RF capability and related methods
    8.
    发明授权
    High temperature ceramic heater assembly with RF capability and related methods 失效
    具有射频功能的高温陶瓷加热器组件及相关方法

    公开(公告)号：US5968379A

    公开(公告)日：1999-10-19

    申请号：US800096

    申请日：1997-02-12

    申请人： Jun Zhao ,  Charles Dornfest ,  Talex Sajoto ,  Leonid Selyutin ,  Stefan Wolff ,  Lee Luo ,  Harold Mortensen ,  Richard Palicka

    发明人： Jun Zhao ,  Charles Dornfest ,  Talex Sajoto ,  Leonid Selyutin ,  Stefan Wolff ,  Lee Luo ,  Harold Mortensen ,  Richard Palicka

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C23C16/52 ,  H01L21/00 ,  H01L21/687 ,  B23K10/00

    CPC分类号： C23C16/4586 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/67103 ,  H01L21/68785 ,  H01L21/68792

    摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

    摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

    Cold trap
    10.
    发明授权
    Cold trap 失效
    冷阱

    公开(公告)号：US6066209A

    公开(公告)日：2000-05-23

    申请号：US52743

    申请日：1998-03-31

    申请人： Talex Sajoto ,  Jun Zhao ,  Vincent Ku ,  Charles Dornfest

    发明人： Talex Sajoto ,  Jun Zhao ,  Vincent Ku ,  Charles Dornfest

    IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  H01L21/00 ,  H01L21/31 ,  C23C16/00

    CPC分类号： C23C16/4409 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/45561 ,  C23C16/4557 ,  H01L21/67017 ,  H01L21/6715 ,  Y10S261/65

    摘要： The invention relates to an apparatus and process for filtering deposition gases in a substrate processing system. Particularly contemplated is an apparatus and process for the filtering deposition gases of a metal-oxide film deposited on a silicon wafer to make integrated circuits. In one embodiment, the invention provides an apparatus for filtering a fluid in a semiconductor processing system, comprising a housing and a filtering member disposable in the housing, the filtering member comprising a base portion and a filtering portion having an inlet and an outlet and a plurality of temperature controlled fluid passages formed between the inlet and the outlet, the passages having a length longer than a width across the passages.

    摘要翻译： 本发明涉及一种用于在基板处理系统中过滤沉积气体的装置和方法。 特别考虑的是用于过滤沉积在硅晶片上的金属氧化物膜的沉积气体以制造集成电路的装置和方法。 在一个实施例中，本发明提供了一种用于对半导体处理系统中的流体进行过滤的装置，包括壳体和一次性在壳体中的过滤构件，过滤构件包括基部和具有入口和出口的过滤部分， 多个温度控制的流体通道形成在入口和出口之间，通道的长度大于通道两端的宽度。