利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

38 条记录 (耗时 0.036 秒)

    Method for substrate processing with improved throughput and yield
    11.
    发明授权
    Method for substrate processing with improved throughput and yield 失效
    提高生产量和产量的基板处理方法

    公开(公告)号：US5993916A

    公开(公告)日：1999-11-30

    申请号：US936285

    申请日：1997-09-22

    申请人： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin

    发明人： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin

    IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32 ,  C23C16/34

    CPC分类号： C23C16/4411 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/2001

    摘要： The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides a method of substrate processing. The method includes steps of circulating a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heating a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The method also includes the step of flowing at a flow rate a gas into the chamber to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

    摘要翻译： 本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。 根据实施例，本发明提供一种基板处理方法。 该方法包括以下步骤：使热交换介质循环通过真空室的室主体中的通道，并且将具有用于支撑基板的表面的加热器基座加热到加热器温度。 热交换介质的热交换温度为约60℃以下。 该方法还包括以气流流入室中以将膜沉积在基底上的步骤，其中流速提供基底的有效温度低于加热器温度，并且其中膜满足均匀性和阻力规格 在沉积到多个基底上之后。 在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。 因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

    Chemical vapor deposition vaporizer
    12.
    发明授权
    Chemical vapor deposition vaporizer 失效
    化学气相沉积蒸发器

    公开(公告)号：US06210485B1

    公开(公告)日：2001-04-03

    申请号：US09352629

    申请日：1999-07-13

    申请人： Jun Zhao ,  Lee Luo ,  Xiaoliang Jin ,  Frank Chang ,  Charles Dornfest ,  Po Tang

    发明人： Jun Zhao ,  Lee Luo ,  Xiaoliang Jin ,  Frank Chang ,  Charles Dornfest ,  Po Tang

    IPC分类号： C23C1600

    CPC分类号： C23C16/4481

    摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the vaporization of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, for deposition on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. The vaporizer comprises thermally controlled components which are adapted for easy assembly and disassembly. A main vaporizing section provides a large heated surface for flash vaporization. A high conductance blocker is disposed at a lower end of the vaporizer to provide an extended vaporization surface. Optionally, a filter may be employed to capture unvaporized precursor droplets.

    摘要翻译： 本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。 特别考虑的是用于蒸发金属氧化物膜如钡，锶，氧化钛（BST）膜的装置和方法，用于沉积在硅晶片上，以使集成电路电容器用于高容量动态存储器模块。 蒸发器包括适于容易组装和拆卸的热控部件。 主蒸发部分提供用于闪蒸的大的加热表面。 高电导阻挡器设置在蒸发器的下端以提供延长的蒸发表面。 任选地，可以使用过滤器来捕获未汽化的前体液滴。

    Tungsten nitride atomic layer deposition processes
    13.
    发明授权
    Tungsten nitride atomic layer deposition processes 有权
    氮化钨原子层沉积工艺

    公开(公告)号：US07745329B2

    公开(公告)日：2010-06-29

    申请号：US12195263

    申请日：2008-08-20

    申请人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

    发明人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

    IPC分类号： H01L21/4763

    CPC分类号： C23C16/45527 ,  C23C16/02 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28061 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76841 ,  H01L27/10861 ,  H01L28/60 ,  H01L29/4941 ,  H01L29/66181

    摘要： In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

    摘要翻译： 在一个实施例中，提供了一种在衬底上形成钨阻挡材料的方法，其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层 在钨层上。 一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体（例如乙硼烷或硅烷）来沉积钨层。 钨层的厚度可以为约或者更小，并且氮化钨层可以具有约380μΩ·cm-cm或更小的电阻率。 其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。

    Tungsten nitride atomic layer deposition processes
    14.
    发明授权
    Tungsten nitride atomic layer deposition processes 有权
    氮化钨原子层沉积工艺

    公开(公告)号：US07429516B2

    公开(公告)日：2008-09-30

    申请号：US11532114

    申请日：2006-09-15

    申请人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

    发明人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

    IPC分类号： H01L21/336

    CPC分类号： C23C16/45527 ,  C23C16/02 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28061 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76841 ,  H01L27/10861 ,  H01L28/60 ,  H01L29/4941 ,  H01L29/66181

    摘要： In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

    摘要翻译： 在一个实施例中，提供了一种在衬底上形成钨阻挡材料的方法，其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层 在钨层上。 一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体（例如乙硼烷或硅烷）来沉积钨层。 钨层的厚度可以为约或者更小，并且氮化钨层的电阻率可以为约380μΩ·cm以下。 其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。

    Method of forming a silicon nitride layer on a substrate
    17.
    发明授权
    Method of forming a silicon nitride layer on a substrate 有权
    在基板上形成氮化硅层的方法

    公开(公告)号：US06559074B1

    公开(公告)日：2003-05-06

    申请号：US10015713

    申请日：2001-12-12

    申请人： Steven A. Chen ,  Xianzhi Tao ,  Shulin Wang ,  Lee Luo ,  Kegang Huang ,  Sang H. Ahn

    发明人： Steven A. Chen ,  Xianzhi Tao ,  Shulin Wang ,  Lee Luo ,  Kegang Huang ,  Sang H. Ahn

    IPC分类号： H01L2131

    CPC分类号： C23C16/345 ,  H01L21/3185 ,  Y10S438/958

    摘要： A silicon nitride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500° C., and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the ratio of the NH3 gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0.15 microns wide and have a height-to-width ratio of at least 1.0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.

    摘要翻译： 在晶体管栅极上形成氮化硅层，而处理温度相对较高，通常至少为500℃，压力相对较高，通常为至少50托，以获得较高的氮化硅形成速率 层。 控制处理条件以更均匀地形成氮化硅层。 通常，体积的NH 3气体与含硅气体的比例被选择得足够高，使得如果表面在小于0.15微米宽的晶体管栅极之间具有低区域，并且具有高度 - 宽度比 至少为1.0，以及至少5微米至5微米的完全平坦的区域，该层在平坦区域上比在低区域的基底上以不超过25％的速率形成。

    TUNGSTEN NITRIDE ATOMIC LAYER DEPOSITION PROCESSES
    18.
    发明申请
    TUNGSTEN NITRIDE ATOMIC LAYER DEPOSITION PROCESSES 有权
    TINGSTEN NITRIDE原子层沉积法

    公开(公告)号：US20070020924A1

    公开(公告)日：2007-01-25

    申请号：US11532114

    申请日：2006-09-15

    申请人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

    发明人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

    IPC分类号： H01L21/4763

    CPC分类号： C23C16/45527 ,  C23C16/02 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28061 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76841 ,  H01L27/10861 ,  H01L28/60 ,  H01L29/4941 ,  H01L29/66181

    摘要： In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

    摘要翻译： 在一个实施例中，提供了一种在衬底上形成钨阻挡材料的方法，其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层 在钨层上。 一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体（例如乙硼烷或硅烷）来沉积钨层。 钨层的厚度可以为约或者更小，并且氮化钨层的电阻率可以为约380μΩ·cm以下。 其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。