公开(公告)号：US20250105023A1

公开(公告)日：2025-03-27

申请号：US18817372

申请日：2024-08-28

Applicant: Kioxia Corporation

Inventor： Shunichi YONEDA ,  Kazuhiro MATSUO ,  Masaya TODA ,  Kota TAKAHASHI ,  Masaya NAKATA ,  Kenichiro TORATANI ,  Ha HOANG ,  Takuma DOI ,  Wakako MORIYAMA

IPC: H01L21/46 ,  C23C8/12

Abstract: A manufacturing method includes loading a substrate into a chamber, the substrate including oxide semiconductor; configuring a temperature in the chamber to a first temperature; supplying an oxidizing gas into the chamber; lowering the temperature in the chamber from the first temperature; stopping supplying the oxidizing gas into the chamber after lowering the temperature; and unloading the substrate from the chamber after the temperature in the chamber reaches a second temperature lower than the first temperature.

公开(公告)号：US20240324179A1

公开(公告)日：2024-09-26

申请号：US18599234

申请日：2024-03-08

Applicant: Kioxia Corporation

Inventor： Yusuke MUTO ,  Masaya TODA ,  Yuta SAITO ,  Kazuhiro KATONO ,  Akifumi GAWASE ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Masaya NAKATA ,  Takuma DOI ,  Kenichiro TORATANI

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: The semiconductor device includes a substrate, an oxide semiconductor layer spaced from the substrate in a first direction intersecting with a surface of the substrate, a first wiring opposed to a part of the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the first wiring, a second wiring electrically connected to one end in the first direction of the oxide semiconductor layer, and a first insulating layer disposed on a surface on one side and a surface on the other side in a second direction intersecting with the first direction of the second wiring. The second wiring contains a first metallic element, and the first insulating layer contains the first metallic element and oxygen (O).

公开(公告)号：US20230340667A1

公开(公告)日：2023-10-26

申请号：US18148322

申请日：2022-12-29

Applicant: Kioxia Corporation

Inventor： Tomoki ISHIMARU ,  Masaya TODA ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Kazuhiro MATSUO

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C23C16/40

CPC classification number: C23C16/45548 ,  C23C16/45565 ,  C23C16/4412 ,  C23C16/52 ,  C23C16/45527 ,  C23C16/407 ,  H01L21/02565

Abstract: A film forming apparatus of embodiments includes: a chamber including a sidewall; a shower head provided in an upper part of the chamber; a holder provided in the chamber holding a substrate; a first gas supply pipe supplying a first gas to the shower head; a first valve provided in the first gas supply pipe; at least one gas supply portion provided in a region of the chamber other than the shower head; a second gas supply pipe supplying a second gas to the at least one gas supply portion; a second valve provided in the second gas supply pipe; a gas exhaust pipe exhausting a gas from the chamber; and an exhaust device connected to the gas exhaust pipe.

公开(公告)号：US20220189989A1

公开(公告)日：2022-06-16

申请号：US17410895

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Masaya TODA ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Yuta KAMIYA ,  Shinji MORI ,  Kenichiro TORATANI

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/28

Abstract: A semiconductor device includes a stacked film of electrode layers and insulating layers. A charge storage layer is in a hole in the stacked film on a first insulating film. A channel layer is on the charge storage layer via a second insulating film. An adsorption promoting layer is on surfaces of a third insulating layer covering the insulating layers and the first insulating film facing the electrode layers. The third insulating film includes a first metal element and a first element, and the adsorption promoting layer includes a second element and a third element. The difference in electronegativity between the second element and the third element is larger than a difference in electronegativity between the first metal element and the first element.

公开(公告)号：US20210358925A1

公开(公告)日：2021-11-18

申请号：US17194629

申请日：2021-03-08

Applicant: Kioxia Corporation

Inventor： Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Shinji MORI ,  Yuta KAMIYA ,  Kenichiro TORATANI

IPC: H01L27/1159 ,  H01L27/11587 ,  H01L27/11597

Abstract: A memory device of an embodiment includes a stacked body including a plurality of insulating layers and a plurality of gate electrode layers alternately stacked in a first direction, a semiconductor layer provided in the stacked body and extending in the first direction, and a gate insulating layer provided between the semiconductor layer and the gate electrode layer, the gate insulating layer including a first region including a first oxide containing at least one of hafnium oxide or zirconium oxide, the first region including an orthorhombic crystal, and the first region including at least one first element selected from the group consisting of carbon (C), nitrogen (N), chlorine (Cl), boron (B), hydrogen (H), fluorine (F), helium (He), and argon (Ar).