公开(公告)号：US20190391557A1

公开(公告)日：2019-12-26

申请号：US16013344

申请日：2018-06-20

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie Volkovich ,  Yaniv Abramovitz

IPC: G05B19/401

Abstract: Methods and metrology modules are provided, which derive landscape information (expressing relation(s) between metrology metric(s) and measurement parameters) from produced wafers, identifying therein indications for production process changes, and modify production process parameters with respect to the identified indications, to maintain the production process within specified requirements. Process changes may be detected in wafer(s), wafer lot(s) and batches, and the information may be used to detect root causes for the changes with respect to production tools and steps and to indicate tool aging and required maintenance. The information and its analysis may further be used to optimize the working point parameters, to optimizing designs of devices and/or targets and/or to train corresponding algorithms to perform the identifying, e.g., using training wafers.

公开(公告)号：US20160370718A1

公开(公告)日：2016-12-22

申请号：US15184612

申请日：2016-06-16

Applicant: KLA-Tencor Corporation

Inventor： Onur Demirer ,  Roie Volkovich ,  William Pierson ,  Mark Wagner ,  Dana Klein

IPC: G03F9/00

Abstract: The generation of flexible sparse metrology sample plans includes receiving a full set of metrology signals from one or more wafers from a metrology tool, determining a set of wafer properties based on the full set of metrology signals and calculating a wafer property metric associated with the set of wafer properties, calculating one or more independent characterization metrics based on the full set of metrology signals, and generating a flexible sparse sample plan based on the set of wafer properties, the wafer property metric, and the one or more independent characterization metrics. The one or more independent characterization metrics of the one or more properties calculated with metrology signals from the flexible sparse sampling plan is within a selected threshold from one or more independent characterization metrics of the one or more properties calculated with the full set of metrology signals.

Abstract translation: 柔性稀疏测量样本计划的生成包括从计量工具接收来自一个或多个晶片的全套计量信号，基于全套测量信号确定一组晶片特性，并计算与该组相关联的晶片特性度量 的晶片属性，基于整套测量信号计算一个或多个独立表征度量，以及基于所述晶片属性集合，所述晶片属性度量以及所述一个或多个独立表征度量来生成柔性稀疏样本计划。 使用来自灵活稀疏采样计划的度量信号计算出的一个或多个属性的一个或多个独立特征度量，在由所述整套度量信号计算的一个或多个属性的一个或多个独立特性度量值的选定阈值内。

公开(公告)号：US11060845B2

公开(公告)日：2021-07-13

申请号：US16665759

申请日：2019-10-28

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Barry Loevsky ,  Andrew Hill ,  Amnon Manassen ,  Nuriel Amir ,  Vladimir Levinski ,  Roie Volkovich

IPC: G01B11/06 ,  G01B11/27 ,  G01N21/95 ,  G01N21/956 ,  G06F30/392 ,  G06F30/398 ,  H01L21/66 ,  G01N21/88

Abstract: Targets, target elements and target design method are provided, which comprise designing a target structure to have a high contrast above a specific contrast threshold to its background in polarized light while having a low contrast below the specific contrast threshold to its background in non-polarized light. The targets may have details at device feature scale and be compatible with device design rules yet maintain optical contrast when measured with polarized illumination and thus be used effectively as metrology targets. Design variants and respective measurement optical systems are likewise provided.

公开(公告)号：US10928739B2

公开(公告)日：2021-02-23

申请号：US16349101

申请日：2019-04-12

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie Volkovich ,  Ido Dolev

IPC: G03F7/20 ,  G01N21/95 ,  H01L23/544 ,  H01L21/66 ,  H01L21/67 ,  G01N21/47

Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.

公开(公告)号：US20200286794A1

公开(公告)日：2020-09-10

申请号：US16470886

申请日：2019-05-19

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie Volkovich ,  Anna Golotsvan ,  Eyal Abend

IPC: H01L21/66 ,  H01L21/67 ,  G01B11/27

Abstract: A dynamic misregistration measurement amelioration method including taking at least one misregistration measurement at multiple sites on a first semiconductor device wafer, which is selected from a batch of semiconductor device wafers intended to be identical, analyzing each of the misregistration measurements, using data from the analysis of each of the misregistration measurements to determine ameliorated misregistration measurement parameters at each one of the multiple sites, thereafter ameliorating misregistration metrology tool setup for ameliorated misregistration measurement at the each one of the multiple sites, thereby generating an ameliorated misregistration metrology tool setup and thereafter measuring misregistration at multiple sites on a second semiconductor device wafer, which is selected from the batch of semiconductor device wafers intended to be identical, using the ameliorated misregistration metrology tool setup.

公开(公告)号：US10754260B2

公开(公告)日：2020-08-25

申请号：US15184612

申请日：2016-06-16

Applicant: KLA-Tencor Corporation

Inventor： Onur Demirer ,  Roie Volkovich ,  William Pierson ,  Mark Wagner ,  Dana Klein

IPC: G01C9/00 ,  G01C1/00 ,  G03F7/20

Abstract: The generation of flexible sparse metrology sample plans includes receiving a full set of metrology signals from one or more wafers from a metrology tool, determining a set of wafer properties based on the full set of metrology signals and calculating a wafer property metric associated with the set of wafer properties, calculating one or more independent characterization metrics based on the full set of metrology signals, and generating a flexible sparse sample plan based on the set of wafer properties, the wafer property metric, and the one or more independent characterization metrics. The one or more independent characterization metrics of the one or more properties calculated with metrology signals from the flexible sparse sampling plan is within a selected threshold from one or more independent characterization metrics of the one or more properties calculated with the full set of metrology signals.

公开(公告)号：US10458777B2

公开(公告)日：2019-10-29

申请号：US14949444

申请日：2015-11-23

Applicant: KLA-TENCOR CORPORATION

Inventor： Eran Amit ,  Barry Loevsky ,  Andrew Hill ,  Amnon Manassen ,  Nuriel Amir ,  Vladimir Levinski ,  Roie Volkovich

IPC: G01B11/06 ,  G01B11/27 ,  G01N21/95 ,  G01N21/956 ,  G06F17/50 ,  H01L21/66 ,  G01N21/88

Abstract: Targets, target elements and target design method are provided, which comprise designing a target structure to have a high contrast above a specific contrast threshold to its background in polarized light while having a low contrast below the specific contrast threshold to its background in non-polarized light. The targets may have details at device feature scale and be compatible with device design rules yet maintain optical contrast when measured with polarized illumination and thus be used effectively as metrology targets. Design variants and respective measurement optical systems are likewise provided.

公开(公告)号：US20220199437A1

公开(公告)日：2022-06-23

申请号：US17688856

申请日：2022-03-07

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie Volkovich ,  Renan Milo ,  Liran Yerushalmi ,  Moran Zaberchik ,  Yoel Feler ,  David Izraeli

IPC: H01L21/67 ,  G05B19/418

Abstract: A method for measurement of misregistration in the manufacture of semiconductor device wafers, the method including measuring misregistration between layers of a semiconductor device wafer at a first instance and providing a first misregistration indication, measuring misregistration between layers of a semiconductor device wafer at a second instance and providing a second misregistration indication, providing a misregistration measurement difference output in response to a difference between the first misregistration indication and the second misregistration indication, providing a baseline difference output and ameliorating the difference between the misregistration measurement difference output and the baseline difference output.

公开(公告)号：US20200312687A1

公开(公告)日：2020-10-01

申请号：US16467968

申请日：2019-05-06

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie Volkovich ,  Renan Milo ,  Liran Yerushalmi ,  Moran Zaberchik ,  Yoel Feler ,  David Izraeli

IPC: H01L21/67 ,  G05B19/418

Abstract: A method for measurement of misregistration in the manufacture of semiconductor device wafers, the method including measuring misregistration between layers of a semiconductor device wafer at a first instance and providing a first misregistration indication, measuring misregistration between layers of a semiconductor device wafer at a second instance and providing a second misregistration indication, providing a misregistration measurement difference output in response to a difference between the first misregistration indication and the second misregistration indication, providing a baseline difference output and ameliorating the difference between the misregistration measurement difference output and the baseline difference output.

公开(公告)号：US10340196B1

公开(公告)日：2019-07-02

申请号：US14270991

申请日：2014-05-06

Applicant: KLA-Tencor Corporation

Inventor： Roie Volkovich ,  Hiroyuki Kurita ,  Yoel Feler

IPC: H01L21/66

Abstract: The selection of metrology targets for use in a focus and dose application includes providing a FEM wafer including a plurality of fields with one or more metrology targets, measuring the one or more metrology targets within each field of the FEM wafer, performing a regression process on measurement results from the one or more selected fields of the FEM wafer to determine one or more DOI values for the one or more metrology targets of the one or more selected fields, calculating one or more diagnostic parameters for the one or more metrology targets of the one or more selected fields based on the regression process performed on the one or more selected fields of the FEM wafer, and identifying a set of candidate metrology targets based on the one or more calculated diagnostic parameters of the one or more selected fields of the FEM wafer.