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公开(公告)号：US20190303717A1
公开(公告)日：2019-10-03
申请号：US16364140
申请日：2019-03-25
Applicant: KLA-Tencor Corporation
Inventor： Kris Bhaskar , Laurent Karsenti , Brad Ries , Lena Nicolaides , Richard (Seng Wee) Yeoh , Stephen Hiebert
IPC: G06K9/62
Abstract: Methods and systems for training a neural network for defect detection in low resolution images are provided. One system includes an inspection tool that includes high and low resolution imaging subsystems and one or more components that include a high resolution neural network and a low resolution neural network. Computer subsystem(s) of the system are configured for generating a training set of defect images. At least one of the defect images is generated synthetically by the high resolution neural network using an image generated by the high resolution imaging subsystem. The computer subsystem(s) are also configured for training the low resolution neural network using the training set of defect images as input. In addition, the computer subsystem(s) are configured for detecting defects on another specimen by inputting the images generated for the other specimen by the low resolution imaging subsystem into the trained low resolution neural network.
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Patent Agency Ranking
公开(公告)号：US09772297B2
公开(公告)日：2017-09-26
申请号：US14618586
申请日：2015-02-10
Applicant: KLA-Tencor Corporation
Inventor： Lena Nicolaides , Mohan Mahadevan , Alex Salnik , Scott A. Young
CPC classification number: G01N21/9505 , G01N21/1717 , G01N21/9501 , G01N2021/8825 , G01N2201/06113
Abstract: Disclosed are methods and apparatus for detecting defects or reviewing defects in a semiconductor sample. The system has a brightfield (BF) module for directing a BF illumination beam onto a sample and detecting an output beam reflected from the sample in response to the BF illumination beam. The system has a modulated optical reflectance (MOR) module for directing a pump and probe beam to the sample and detecting a MOR output beam from the probe spot in response to the pump beam and the probe beam. The system includes a processor for analyzing the BF output beam from a plurality of BF spots to detect defects on a surface or near the surface of the sample and analyzing the MOR output beam from a plurality of probe spots to detect defects that are below the surface of the sample.
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公开(公告)号：US09747520B2
公开(公告)日：2017-08-29
申请号：US15068320
申请日：2016-03-11
Applicant: KLA-TENCOR CORPORATION
Inventor： Shifang Li , Youxian Wen , Sven Schwitalla , Prashant Aji , Lena Nicolaides
CPC classification number: G06K9/6201 , G03F1/84 , G06T5/50 , G06T7/001 , G06T2207/10016 , G06T2207/10024 , G06T2207/20224 , G06T2207/30148 , H04N5/2256
Abstract: Systems and methods for enhancing inspection sensitivity to detect defects in wafers using an inspection tool are disclosed. A plurality of light emitting diodes illuminate at least a portion of a wafer and capture a set of grayscale images. A residual signal is determined in each image of the grayscale image set and the residual signal is subtracted from each image of the grayscale image set. Defects are identified based on the subtracted grayscale image set. Models of the inspection tool and wafer may be built and refined in some embodiments of the disclosed systems and methods.
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14.发明授权公开(公告)号：US09640449B2
公开(公告)日：2017-05-02
申请号：US14688739
申请日：2015-04-16
Applicant: KLA-Tencor Corporation
Inventor： Timothy Goodwin , Lena Nicolaides , Mohan Mahadevan , Paul Horn , Shifang Li
CPC classification number: H01L22/24 , G01B11/16 , G01N21/8806 , G01N21/95 , G01N21/9503 , G01N2201/06113 , H01L22/12
Abstract: Photoreflectance spectroscopy is used to measure strain at or near the edge of a wafer in a production process. The strain measurement is used to anticipate defects and make prospective corrections in later stages of the production process. Strain measurements are used to associate various production steps with defects to enhance later production processes.
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15.发明申请公开(公告)号：US20160275671A1
公开(公告)日：2016-09-22
申请号：US15068320
申请日：2016-03-11
Applicant: KLA-TENCOR CORPORATION
Inventor： Shifang Li , Youxian Wen , Sven Schwitalla , Prashant Aji , Lena Nicolaides
CPC classification number: G06K9/6201 , G03F1/84 , G06T5/50 , G06T7/001 , G06T2207/10016 , G06T2207/10024 , G06T2207/20224 , G06T2207/30148 , H04N5/2256
Abstract: Systems and methods for enhancing inspection sensitivity to detect defects in wafers using an inspection tool are disclosed. A plurality of light emitting diodes illuminate at least a portion of a wafer and capture a set of grayscale images. A residual signal is determined in each image of the grayscale image set and the residual signal is subtracted from each image of the grayscale image set. Defects are identified based on the subtracted grayscale image set. Models of the inspection tool and wafer may be built and refined in some embodiments of the disclosed systems and methods.
Abstract translation: 公开了一种用于提高检测灵敏度以使用检查工具检测晶片中的缺陷的系统和方法。 多个发光二极管照亮晶片的至少一部分并捕获一组灰度图像。 在灰度图像集合的每个图像中确定残差信号，并从灰度图像集合的每个图像中减去残留信号。 基于减法灰度图像集确定缺陷。 可以在所公开的系统和方法的一些实施例中构建和改进检查工具和晶片的模型。
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16.发明申请Automated Inline Inspection of Wafer Edge Strain Profiles Using Rapid Photoreflectance Spectroscopy 有权使用快速光反射光谱法进行晶圆边缘应变分布的自动在线检测公开(公告)号：US20150371910A1
公开(公告)日：2015-12-24
申请号：US14688739
申请日：2015-04-16
Applicant: KLA-Tencor Corporation
Inventor： Timothy Goodwin , Lena Nicolaides , Mohan Mahadevan , Paul Horn , Shifang Li
CPC classification number: H01L22/24 , G01B11/16 , G01N21/8806 , G01N21/95 , G01N21/9503 , G01N2201/06113 , H01L22/12
Abstract: Photoreflectance spectroscopy is used to measure strain at or near the edge of a wafer in a production process. The strain measurement is used to anticipate defects and make prospective corrections in later stages of the production process. Strain measurements are used to associate various production steps with defects to enhance later production processes.
Abstract translation: 光反射光谱法用于在生产过程中测量晶片边缘处或附近的应变。 应变测量用于预测缺陷，并在生产过程的后期进行前瞻性更正。 应变测量用于将各种生产步骤与缺陷相关联，以增强后续生产过程。
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